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SUM23N15-73 [VISHAY]

N-Channel 150-V (D-S) 175 C MOSFET; N沟道150 -V （ D- S） 175℃ MOSFET
SUM23N15-73
型号： SUM23N15-73
厂家： VISHAY    VISHAY
描述：

N-Channel 150-V (D-S) 175 C MOSFET
N沟道150 -V （ D- S） 175℃ MOSFET

晶体 晶体管 功率场效应晶体管
文件： 总5页 (文件大小：42K)
中文：  中文翻译
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SUM23N15-73  
Vishay Siliconix  
N-Channel 150-V (D-S) 175_C MOSFET  
FEATURES  
D TrenchFETr Power MOSFETS  
D 175_C Junction Temperature  
D New Low Thermal Resistance Package  
D PWM Optimized  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
0.073 @ V = 10 V  
23  
GS  
APPLICATIONS  
150  
0.077 @ V = 6 V  
22.5  
GS  
D Primary Side Switch  
D
TO-263  
G
G
D S  
Top View  
S
N-Channel MOSFET  
Ordering Information: SUM23N15-73  
SUM23N15-73  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
150  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
T
= 25_C  
= 125_C  
23  
13.4  
35  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
C
A
Pulsed Drain Current  
Avalanche Current  
I
DM  
I
25  
AR  
a
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
31  
mJ  
b
T
T
= 25_C  
100  
C
a
Maximum Power Dissipation  
P
W
D
c
= 25_C  
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
Junction-to-Ambient (PCB Mount)  
R
40  
thJA  
thJC  
_
C/W  
Junction-to-Case (Drain)  
R
1.5  
Notes  
a. Duty cycle v 1%.  
b. See SOA curve for voltage derating.  
c. When mounted on 1” square PCB (FR-4 material).  
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
1
SUM23N15-73  
Vishay Siliconix  
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
V
V
= 0 V, I = 250 mA  
150  
2
(BR)DSS  
DS  
D
V
V
V
DS  
= V , I = 250 mA  
4
GS(th)  
GS  
D
Gate-Body Leakage  
I
V
DS  
= 0 V, V = "20 V  
"100  
nA  
GSS  
GS  
V
DS  
= 120 V, V = 0 V  
1
GS  
V
V
= 120 V, V = 0 V, T = 125_C  
50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
GS  
J
DSS  
= 120 V, V = 0 V, T = 175_C  
250  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
w 5 V, V = 10 V  
35  
10  
A
D(on)  
GS  
V
GS  
= 10 V, I = 15 A  
0.059  
0.062  
0.073  
0.140  
0.168  
0.077  
D
V
= 10 V, I = 15 A, T = 125_C  
GS  
D
J
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 10 V, I = 15 A, T = 175_C  
GS  
D
J
V
GS  
= 6 V, I = 10 A  
D
a
Forward Transconductance  
g
fs  
V
DS  
= 15 V, I = 25 A  
S
D
Dynamicb  
Input Capacitance  
C
C
1290  
160  
70  
iss  
Output Capacitance  
pF  
V
V
= 0 V, V = 25 V, f = 1 MHz  
DS  
oss  
GS  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
22  
35  
g
c
Gate-Source Charge  
Q
Q
6
= 75 V, V = 10 V, I = 23 A  
nC  
gs  
gd  
DS  
GS  
D
c
Gate-Drain Charge  
7.5  
Gate Resistance  
R
G
4.0  
W
c
Turn-On Delay Time  
t
10  
60  
30  
45  
15  
90  
43  
70  
d(on)  
c
Rise Time  
t
r
V
= 75 V, R = 3.26 W  
L
= 10 V, R = 2.5 W  
GEN G  
DD  
ns  
I
D
^ 23 A, V  
c
Turn-Off Delay Time  
t
d(off)  
c
Fall Time  
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
35  
23  
S
A
Pulsed Current  
I
SM  
a
I
= 23 A, V = 0 V  
GS  
Forward Voltage  
V
1.0  
100  
5
1.5  
150  
8
V
ns  
A
F
SD  
Reverse Recovery Time  
t
rr  
I
RM(REC)  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
I
F
= 23 A, di/dt = 100 A/ms  
Q
0.25  
0.6  
mC  
rr  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
2
SUM23N15-73  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
35  
35  
28  
21  
14  
7
V
GS  
= 10 thru 6 V  
30  
25  
20  
15  
10  
5
T
= 125_C  
C
5 V  
25_C  
-55_C  
4 V  
12  
0
0
0
3
6
9
15  
0
1
2
3
4
5
6
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
50  
40  
30  
20  
10  
0
0.12  
0.09  
0.06  
0.03  
0.00  
T
= -55_C  
C
25_C  
V
= 6 V  
GS  
125_C  
V
GS  
= 10 V  
0
5
10  
D
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
35  
I
- Drain Current (A)  
I
D
- Drain Current (A)  
Capacitance  
Gate Charge  
2000  
1600  
1200  
800  
400  
0
20  
16  
12  
8
V
= 75 V  
= 23 A  
DS  
I
D
C
iss  
4
C
rss  
C
oss  
0
0
30  
60  
90  
120  
150  
0
8
16  
24  
32  
40  
V
DS  
- Drain-to-Source Voltage (V)  
Q
g
- Total Gate Charge (nC)  
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
3
SUM23N15-73  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
100  
V
= 10 V  
= 15 A  
GS  
I
D
T = 150_C  
J
T = 25_C  
J
10  
1
-50 -25  
0
25  
50  
75 100 125 150 175  
0
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
- Junction Temperature (_C)  
- Source-to-Drain Voltage (V)  
J
SD  
Drain Source Breakdown vs.  
Junction Temperature  
190  
180  
170  
160  
150  
140  
I
D
= 1.0 mA  
-50 -25  
0
25  
50  
75 100 125 150 175  
T
- Junction Temperature (_C)  
J
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
4
SUM23N15-73  
Vishay Siliconix  
THERMAL RATINGS  
Maximum Avalanche and Drain Current  
vs. Case Temperature  
Safe Operating Area  
100  
10  
25  
20  
15  
10  
5
Limited  
by r  
DS(on)  
10 ms  
100 ms  
1 ms  
10 ms  
1
100 ms  
dc  
T
= 25_C  
C
Single Pulse  
0
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
1000  
V
DS  
- Drain-to-Source Voltage (V)  
T
- Ambient Temperature (_C)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
5

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