TLMS3302-GS08 [VISHAY]

Visible LED, Clear;
TLMS3302-GS08
型号: TLMS3302-GS08
厂家: VISHAY    VISHAY
描述:

Visible LED, Clear

文件: 总12页 (文件大小:141K)
中文:  中文翻译
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TLMK/O/S/Y330.  
Vishay Semiconductors  
Power SMD LED PLCC-2  
FEATURES  
• Utilizing (AS) AlInGaP technology  
• Available in 8 mm tape  
• Luminous intensity, color and forward  
voltage categorized per packing unit  
e3  
• Luminous intensity ratio per packing unit  
I
/I  
1.6  
Vmax Vmin  
• Thermal resistance R = 400 K/W  
19225  
• ESD-withstand voltage: up to 2 kV according to  
JESD22-A114-B  
• Suitable for all soldering methods according to  
CECC  
• Lead (Pb)-free device  
• Preconditioning: acc. to JEDEC level 2a  
DESCRIPTION  
APPLICATIONS  
The TLM.33.. series is an advanced modification of the  
Vishay TLM.31.. series. It is designed to incorporate  
larger chips, therefore, capable of withstanding a  
50 mA drive current.  
• Traffic signals and signs  
• Interior and exterior lighting  
• Dashboard illumination  
• Indicator and backlighting purposes for audio,  
video, LCDs switches, symbols, illuminated  
advertising etc  
The package of the TLM.33.. is the PLCC-2.  
It consists of a lead frame which is embedded in a  
white thermoplast. The reflector inside this package is  
filled up with clear epoxy.  
PRODUCT GROUP AND PACKAGE DATA  
• Product group: LED  
• Package: SMD PLCC-2  
• Product series: power  
• Angle of half intensity: 60°  
PARTS TABLE  
PART  
COLOR, LUMINOUS INTENSITY  
Red, IV > 200 mcd  
TECHNOLOGY  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
TLMK3300-GS08  
TLMK3300-GS18  
TLMK3301-GS08  
TLMK3301-GS18  
TLMK3302-GS08  
TLMK3302-GS18  
TLMK3303-GS08  
TLMS3300-GS08  
TLMS3301-GS08  
TLMS3302-GS08  
Red, IV > 200 mcd  
Red, IV = (250 to 800) mcd  
Red, IV = (250 to 800) mcd  
Red, IV = (400 to 800) mcd  
Red, IV = (400 to 800) mcd  
Red, IV = (400 to 1250) mcd  
Red, IV > 160 mcd  
Red, IV = (160 to 400) mcd  
Red, IV = (250 to 800) mcd  
Document Number 83201  
Rev. 1.5, 25-Sep-07  
www.vishay.com  
1
TLMK/O/S/Y330.  
Vishay Semiconductors  
PARTS TABLE  
PART  
COLOR, LUMINOUS INTENSITY  
TECHNOLOGY  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
Soft orange, IV > 200 mcd  
TLMO3300-GS08  
TLMO3301-GS08  
TLMO3302-GS08  
TLMO3303-GS08  
TLMY3300-GS08  
TLMY3301-GS08  
TLMY3302-GS08  
TLMY3303-GS08  
Soft orange, IV = (250 to 640) mcd  
Soft orange, IV = (320 to 800) mcd  
Soft orange, IV = (400 to 1250) mcd  
Yellow, IV > 200 mcd  
Yellow, IV = (250 to 640) mcd  
Yellow, IV = (320 to 800) mcd  
Yellow, IV = (400 to 1250) mcd  
1)  
ABSOLUTE MAXIMUM RATINGS TLMY33.., TLMO33.., TLMK33.., TLMS33..  
PARAMETER  
Reverse voltage2)  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
V
VR  
5
50  
Tamb 73 °C (400 K/W)  
Tamb 73 °C (400 K/W)  
IF  
PV  
DC Forward current  
Power dissipation  
mA  
mW  
°C  
130  
Tj  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
125  
Tamb  
Tstg  
Tsd  
- 40 to + 100  
- 40 to + 100  
260  
°C  
°C  
t 5 s  
°C  
Thermal resistance junction/  
ambient  
mounted on PC board  
(pad size > 16 mm2)  
RthJA  
400  
K/W  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
2) Driving LED in reverse direction is suitable for short term application  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMK33.., RED  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN  
200  
250  
400  
400  
TYP.  
MAX  
UNIT  
mcd  
mcd  
mcd  
mcd  
IV  
TLMK3300  
TLMK3301  
TLMK3302  
TLMK3303  
500  
IV  
IV  
IV  
800  
800  
IF = 50 mA  
Luminous intensity  
1250  
Luminous flux/Luminous  
intensity  
φV/IV  
3
mlm/mcd  
IF = 50 mA  
IF = 50 mA  
λd  
λp  
Dominant wavelength  
Peak wavelength  
611  
617  
624  
622  
nm  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 50 mA  
Δλ  
18  
nm  
IF = 50 mA  
IF = 50 mA  
VR = 5 V  
Angle of half intensity  
Forward voltage  
ϕ
60  
2.1  
deg  
V
VF  
VR  
1.85  
2.55  
10  
Reverse current  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
www.vishay.com  
2
Document Number 83201  
Rev. 1.5, 25-Sep-07  
TLMK/O/S/Y330.  
Vishay Semiconductors  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMS33.., RED  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN  
160  
160  
250  
TYP.  
MAX  
UNIT  
mcd  
mcd  
mcd  
IV  
TLMS3300  
TLMS3301  
TLMS3302  
300  
IF = 50 mA  
IV  
IV  
Luminous intensity  
400  
800  
Luminous flux/Luminous  
intensity  
φV/IV  
3
mlm/mcd  
IF = 50 mA  
IF = 50 mA  
λd  
λp  
Dominant wavelength  
Peak wavelength  
626  
630  
641  
638  
nm  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 50 mA  
Δλ  
17  
nm  
IF = 50 mA  
IF = 50 mA  
VR = 5 V  
Angle of half intensity  
Forward voltage  
ϕ
60  
2.1  
deg  
V
VF  
VR  
1.85  
2.55  
10  
Reverse current  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMO33.., SOFT ORANGE  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN  
200  
250  
320  
400  
TYP.  
MAX  
UNIT  
mcd  
mcd  
mcd  
mcd  
IV  
TLMO3300  
TLMO3301  
TLMO3302  
TLMO3303  
500  
IV  
IV  
IV  
640  
800  
IF = 50 mA  
Luminous intensity  
1250  
Luminous flux/Luminous  
intensity  
φV/IV  
3
mlm/mcd  
IF = 50 mA  
IF = 50 mA  
λd  
λp  
Dominant wavelength  
Peak wavelength  
600  
605  
611  
611  
nm  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 50 mA  
Δλ  
17  
nm  
IF = 50 mA  
IF = 50 mA  
VR = 5 V  
Angle of half intensity  
Forward voltage  
ϕ
60  
2.1  
deg  
V
VF  
VR  
1.85  
2.55  
10  
Reverse current  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
Document Number 83201  
Rev. 1.5, 25-Sep-07  
www.vishay.com  
3
TLMK/O/S/Y330.  
Vishay Semiconductors  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMY33.., YELLOW  
SYMBO  
PARAMETER  
TEST CONDITION  
PART  
MIN  
TYP.  
MAX  
UNIT  
L
IV  
TLMY3300  
TLMY3301  
TLMY3302  
TLMY3303  
200  
250  
320  
400  
450  
mcd  
mcd  
mcd  
mcd  
IV  
IV  
IV  
640  
800  
IF = 50 mA  
Luminous intensity  
1250  
Luminous flux/Luminous  
intensity  
φV/IV  
3
mlm/mcd  
IF = 50 mA  
IF = 50 mA  
λd  
λp  
Dominant wavelength  
Peak wavelength  
583  
588  
590  
594  
nm  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 50 mA  
Δλ  
18  
nm  
IF = 50 mA  
IF = 50 mA  
VR = 5 V  
Angle of half intensity  
Forward voltage  
ϕ
60  
2.1  
deg  
V
VF  
VR  
1.85  
2.55  
10  
Reverse current  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
FORWARD VOLTAGE CLASSIFICATION  
FORWARD VOLTAGE (V)  
GROUP  
MIN  
1.85  
2.15  
MAX  
1
2
2.25  
2.55  
COLOR CLASSIFICATION  
DOMINANT WAVELENGTH (NM)  
SOFT ORANGE  
GROUP  
RED  
YELLOW  
min  
611  
614  
max  
618  
622  
min  
598  
600  
602  
604  
606  
608  
max  
601  
603  
605  
607  
609  
611  
min  
581  
583  
585  
587  
589  
591  
max  
1
2
3
4
5
6
584  
586  
588  
590  
592  
594  
LUMINOUS INTENSITY CLASSIFICATION  
LUMINOUS INTENSITY (MCD)  
GROUP  
MIN  
160  
200  
250  
320  
400  
500  
630  
800  
MAX  
250  
Xa  
Xb  
Ya  
Yb  
Za  
Zb  
0a  
0b  
320  
400  
500  
630  
800  
1000  
1250  
www.vishay.com  
4
Document Number 83201  
Rev. 1.5, 25-Sep-07  
TLMK/O/S/Y330.  
Vishay Semiconductors  
GROUP NAME ON LABEL  
Luminous Intensity Group  
Halfgroup  
Wavelength  
Forward Voltage  
Z
b
2
1
One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage.  
Only one single classification groups is not available.  
The given groups are not order codes, customer specific group combinations require marketing agreement.  
No color subgrouping for super red.  
TYPICAL CHARACTERISTICS  
T
= 25 °C, unless otherwise specified  
amb  
0°  
10°  
20°  
200  
180  
160  
30°  
40°  
R
thJA  
= 400K/W  
140  
120  
100  
80  
1.0  
0.9  
50°  
60°  
0.8  
60  
40  
70°  
0.7  
20  
80°  
0
0
25  
50  
75  
100  
125  
0.6  
0.6 0.4 0.2  
0
0.2 0.4  
95 10319  
16783  
T
amb  
- Ambient Temperature (°C)  
Figure 1. Power Dissipation vs. Ambient Temperature  
Figure 3. Rel. Luminous Intensity vs. Angular Displacement  
100  
90  
1.2  
yellow  
1.0  
80  
70  
0.8  
0.6  
0.4  
0.2  
0.0  
RthJA = 400 K/W  
60  
50  
40  
30  
20  
10  
0
540  
560  
580  
600  
620  
640  
10  
25  
50  
75  
100  
125  
16008  
λ - Wavelength (nm)  
16784  
Tamb - Ambient Temperature (°C)  
Figure 2. Forward Current vs. Ambient Temperature  
Figure 4. Relative Intensity vs. Wavelength  
Document Number 83201  
Rev. 1.5, 25-Sep-07  
www.vishay.com  
5
TLMK/O/S/Y330.  
Vishay Semiconductors  
250  
10  
30 mA  
200  
yellow  
50 mA  
150  
yellow  
100  
1
50  
10 mA  
0
- 50  
- 100  
- 150  
- 200  
0.1  
0.01  
- 50 - 25  
0
25  
50  
75  
100  
1
10  
IF - Forward Current (mA)  
100  
Tamb - Ambient Temperature (°C)  
17015  
17018  
Figure 5. Change of Forward Voltage vs. Ambient Temperature  
Figure 8. Relative Luminous Intensity vs. Forward Current  
2.5  
1.5  
yellow  
yellow  
1.0  
2.0  
0.5  
0.0  
1.5  
1.0  
0.5  
0.0  
- 0.5  
- 1.0  
- 1.5  
- 50 - 25  
0
25  
50  
75  
100  
10 20 30 40 50 60 70 80 90 100  
Tamb - Ambient Temperature (°C)  
17019  
IF - Forward Current (mA)  
17016  
Figure 6. Relative Luminous Intensity vs. Amb. Temperature  
Figure 9. Change of Dominant Wavelength vs. Forward Current  
6
1.2  
yellow  
soft orange  
1.0  
4
2
0
0.8  
0.6  
0.4  
0.2  
0.0  
- 2  
- 4  
- 6  
- 50 - 25  
0
25  
50  
75  
100  
560  
580  
600  
620  
640  
660  
Tamb - Ambient Temperature (°C)  
16314  
17017  
λ - Wavelength (nm)  
Figure 7. Change of Dominant Wavelength vs.  
Ambient Temperature  
Figure 10. Relative Intensity vs. Wavelength  
www.vishay.com  
6
Document Number 83201  
Rev. 1.5, 25-Sep-07  
TLMK/O/S/Y330.  
Vishay Semiconductors  
250  
200  
150  
100  
50  
10  
50 mA  
30 mA  
soft orange  
1
soft orange  
10 mA  
0
- 50  
- 100  
- 150  
- 200  
0.1  
0.01  
- 50 - 25  
0
25  
50  
75  
100  
1
10  
IF - Forward Current (mA)  
100  
17023  
17020  
Tamb - Ambient Temperature (°C)  
Figure 11. Change of Forward Voltage vs. Ambient Temperature  
Figure 14. Relative Luminous Intensity vs. Forward Current  
2.5  
1.5  
soft orange  
1.0  
soft orange  
2.0  
0.5  
0.0  
1.5  
1.0  
0.5  
0.0  
- 0.5  
- 1.0  
- 1.5  
- 50 - 25  
0
25  
50  
75  
100  
10 20 30 40 50 60 70 80 90 100  
17021  
Tamb - Ambient Temperature (°C)  
17024  
IF - Forward Current (mA)  
Figure 12. Relative Luminous Intensity vs. Amb. Temperature  
Figure 15. Change of Dominant Wavelength vs. Forward Current  
6
1.2  
red  
1.0  
soft orange  
4
2
0
0.8  
0.6  
0.4  
0.2  
0.0  
- 2  
- 4  
- 6  
- 50 - 25  
0
25  
50  
75  
100  
570  
590  
610  
630  
650  
670  
17022  
Tamb - Ambient Temperature (°C)  
16007  
λ - Wavelength (nm)  
Figure 13. Change of Dominant Wavelength vs.  
Ambient Temperature  
Figure 16. Relative Intensity vs. Wavelength  
Document Number 83201  
Rev. 1.5, 25-Sep-07  
www.vishay.com  
7
TLMK/O/S/Y330.  
Vishay Semiconductors  
250  
200  
10  
red  
red  
50 mA  
150  
100  
1
30 mA  
50  
0
10 mA  
- 50  
0.1  
- 100  
- 150  
- 200  
0.01  
1
10  
100  
- 50 - 25  
0
25  
50  
75  
100  
17037  
IF - Forward Current (mA)  
17034  
Tamb - Ambient Temperature (°C)  
Figure 17. Change of Forward Voltage vs. Ambient Temperature  
Figure 20. Relative Luminous Intensity vs. Forward Current  
2.5  
1.5  
red  
1.0  
red  
2.0  
0.5  
0.0  
1.5  
1.0  
0.5  
0.0  
- 0.5  
- 1.0  
- 1.5  
- 50 - 25  
0
25  
50  
75  
100  
10 20 30 40 50 60 70 80 90 100  
17035  
Tamb - Ambient Temperature (°C)  
17038  
IF - Forward Current (mA)  
Figure 18. Relative Luminous Intensity vs. Amb. Temperature  
Figure 21. Change of Dominant Wavelength vs. Forward Current  
6
1.2  
red  
1.1  
red  
1.0  
4
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
2
0
- 2  
- 4  
- 6  
0.0  
- 50 - 25  
0
25  
50  
75  
100  
600 610 620 630 640 650 660 670 680 690 700  
Tamb - Ambient Temperature (°C)  
17045  
λ - Wavelength (nm)  
17036  
Figure 19. Change of Dominant Wavelength vs.  
Ambient Temperature  
Figure 22. Relative Intensity vs. Wavelength  
www.vishay.com  
8
Document Number 83201  
Rev. 1.5, 25-Sep-07  
TLMK/O/S/Y330.  
Vishay Semiconductors  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
red  
yellow  
soft orange  
red  
super red  
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5  
- 50 - 25  
0
25  
50  
75  
100  
17046  
V - Forward Voltage (V)  
F
17040  
T
amb  
- Ambient Temperature (°C)  
Figure 23. Forward Current vs. Forward Voltage  
Figure 26. Relative Luminous Intensity vs. Amb. Temperature  
3
100  
90  
red  
2
red  
80  
1
0
70  
60  
50  
40  
30  
20  
10  
- 1  
- 2  
- 3  
- 4  
- 5  
0
- 50 - 25  
0
25  
50  
75  
100  
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4  
T
amb  
- Ambient Temperature (°C)  
17047  
V - Forward Voltage (V)  
F
17041  
Figure 24. Forward Current vs. Forward Voltage  
Figure 27. Change of Dominant Wavelength vs.  
Ambient Temperature  
10  
250  
200  
super red  
30 mA  
red  
150  
100  
50  
1
0
50 mA  
10 mA  
0
- 50  
- 100  
- 150  
- 200  
0.01  
1
10  
100  
- 50 - 25  
0
25  
50  
75  
100  
IF - Forward Current (mA)  
17042  
Tamb - Ambient Temperature (°C)  
17039  
Figure 25. Change of Forward Voltage vs. Ambient Temperature  
Figure 28. Relative Luminous Intensity vs. Forward Current  
Document Number 83201  
Rev. 1.5, 25-Sep-07  
www.vishay.com  
9
TLMK/O/S/Y330.  
Vishay Semiconductors  
1.5  
red  
1.0  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
0.5  
0.0  
tP/T = 0.005  
0.05  
0.5  
- 0.5  
- 1.0  
- 1.5  
10-5 10-4 10-3 10-2 10-1 100 101 102  
10 20 30 40 50 60 70 80 90 100  
- Forward Current (mA)  
17044  
tP - Pulse Length (s)  
I
F
17043  
Figure 29. Change of Dominant Wavelength vs. Forward Current  
PACKAGE DIMENSIONS in millimeters  
3.5 0.2  
Figure 30. Forward Current vs. Pulse Length  
technical drawings  
according to DIN  
specifications  
Mounting Pad Layout  
Pin identification  
1.2  
area covered with  
solder resist  
C
A
4
1.6 (1.9)  
? 2.4  
+ 0.15  
3
Drawing-No.: 6.541-5025.01-4  
Issue: 8; 22.11.05  
95 11314-1  
www.vishay.com  
10  
Document Number 83201  
Rev. 1.5, 25-Sep-07  
TLMK/O/S/Y330.  
Vishay Semiconductors  
OZONE DEPLETING SUBSTANCES POLICY STATEMENT  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as their  
impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or  
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and  
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such  
unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 83201  
Rev. 1.5, 25-Sep-07  
www.vishay.com  
11  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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