TSFF5400-ASZ [VISHAY]
Infrared LED, 870nm;
| 型号： | TSFF5400-ASZ |
| 厂家： | 
VISHAY |
| 描述： | Infrared LED, 870nm 半导体 |
| 文件： | 总7页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSFF5400
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
TSFF5400 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
The new technology combines the high speed of DH-
GaAlAs with the efficiency of standard GaAlAs and
the low forward voltage of the standard GaAs technol-
94 8390
ogy.
Features
• High modulation bandwidth (35 MHz)
• Extra high radiant power and radiant intensity
• Low forward voltage
Applications
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = 22°
Infrared video data transmission between Camcorder
and TV set.
Free air data transmission systems with high modu-
lation frequencies or high data transmission rate
requirements.
• Peak wavelength λ = 870 nm
p
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Test condition
Symbol
VR
Value
5
Unit
V
Forward current
IF
IFM
IFSM
PV
100
300
mA
mA
A
Peak Forward Current
Surge Forward Current
Power Dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
1
250
mW
°C
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Tj
100
Tamb
Tstg
Tsd
- 25 to + 85
- 25 to + 85
260
°C
°C
t ≤ 5 sec, 2 mm from case
°C
Thermal Resistance Junction/
Ambient
RthJA
300
K/W
Document Number 81016
Rev. 1.8, 08-Mar-05
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TSFF5400
Vishay Semiconductors
VISHAY
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VF
Min
Typ.
1.45
Max
1.6
Unit
V
Forward Voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA
VF
TKVF
IR
2.5
3.0
V
mV/K
µA
Temp. Coefficient of VF
Reverse Current
-2.4
VR = 5 V
10
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
160
pF
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Ie
Min
35
Typ.
60
Max
175
Unit
Radiant Intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
mW/sr
Ie
φe
350
600
40
mW/sr
mW
Radiant Power
Temp. Coefficient of φe
TKφe
-0.5
%/K
Angle of Half Intensity
Peak Wavelength
ϕ
22
deg
nm
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
λp
870
Spectral Bandwidth
Temp. Coefficient of λp
Rise Time
∆λ
TKλp
tr
40
0.2
10
nm
nm/K
ns
Fall Time
tf
10
ns
Cut-Off Frequency
Virtual Source Diameter
I
DC = 70 mA, IAC = 30 mA pp
fc
35
MHz
mm
∅
2.1
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
250
200
200
150
100
50
150
100
50
R
thJA
R
thJA
80
0
0
0
20
40
60
80
100
0
20
40
60
100
T
amb
- Ambient Temperature ( °C )
T
amb
- Ambient Temperature ( °C )
94 7957
94 8879
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 81016
Rev. 1.8, 08-Mar-05
2
TSFF5400
Vishay Semiconductors
VISHAY
1000.0
100.0
10.0
T
< 50°
t /T= 0.01
p
amb
1000
0.02
0.05
0.1
0.2
0.5
1.0
100
0.01
0.1
1
10
100
1000
0.1
1.0
10
100
I
- Forward Current ( mA )
18220
16031
t - Pulse Duration ( ms )
p
F
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
1000
1000
100
10
1
100
10
1
0.1
0.1
1
10
I - Forward Current ( mA )
F
100
1000
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
- Forward Voltage ( V )
16030
V
16033
F
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Radiant Power vs. Forward Current
1.2
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I
= 20 mA
F
1.1
I
= 10 mA
F
1.0
0.9
0.8
0.7
0
20
40
60
80
100
0
10 20 30 40 50 60 70 80 90 100
T
- Ambient Temperature (°C )
94 7990
amb
16034
T
amb
- Ambient Temperature ( °C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Document Number 81016
Rev. 1.8, 08-Mar-05
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TSFF5400
Vishay Semiconductors
VISHAY
1.25
1.0
0.75
0.5
0.25
0
980
780
880
λ – Wavelength ( nm )
95 9886
Figure 9. Relative Radiant Power vs. Wavelength
0°
10°
20°
30°
40°
1.0
0.9
0.8
50°
60°
70°
0.7
80°
0.6
0.6 0.4 0.2
0
0.2
0.4
94 8883
Figure 10. Relative Radiant Intensity vs. Angular Displacement
1
0
-1
-2
-3
I
= 70mA
= 30mA pp
FDC
-4
-5
I
FAC
10
100
1000
10000
100000
14256
f - Frequency ( kHz )
Figure 11. Attenuation vs. Frequency
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Document Number 81016
Rev. 1.8, 08-Mar-05
TSFF5400
Vishay Semiconductors
VISHAY
Package Dimensions in mm
95 11260
Document Number 81016
Rev. 1.8, 08-Mar-05
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TSFF5400
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81016
Rev. 1.8, 08-Mar-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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