TSML3710 [VISHAY]

GaAs/GaAlAs Infrared Emitting Diode in SMT Package; 的GaAs / GaAlAs的红外发光二极管在SMT封装


型号：	TSML3710
厂家：	VISHAY
描述：	GaAs/GaAlAs Infrared Emitting Diode in SMT Package 的GaAs / GaAlAs的红外发光二极管在SMT封装二极管
文件：	总8页 (文件大小：239K)
中文：	中文翻译
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TSML3710

Vishay Semiconductors

VISHAY

GaAs/GaAlAs Infrared Emitting Diode in SMT Package

Description

TSML3710 is an infrared emitting diode in GaAlAs on

GaAs technology in miniature PLCC2 SMD package.

Features

• SMT IRED with extra high radiant power

• Low forward voltage

• Compatible with automatic placement equipment

• EIA and ICE standard package

94 8553

• Suitable for infrared, vapor phase and wavesolder

process

• Packed in 8 mm tape

• Suitable for pulse current operation

Applications

IR emitter in photointerrupters, transmissive sensors

and reflective sensors

• Extra wide angle of half intensity ϕ = 60ꢀ

• Peak wavelength λ = 950 nm

• Matched with TEMT3700 phototransistor

Household appliance

IR emitter in low space applications

Tactile keyboards

Parts Table

Part

Ordering code

TSML3710-GS08

Remarks

TSML3710

MOQ 7500pcs (1500 pcs per reel)

Absolute Maximum Ratings

T_amb= 25 ꢀC, unless otherwise specified

Parameter

Test condition

Symbol

V_R

Value

Unit

Reverse Voltage

Forward Current

I_F

I_FM

I_FSM

P_V

100

200

Peak Forward Current

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

Surge Forward Current

Power Dissipation

170

ꢀC

Junction Temperature

T_j

100

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

T_amb

T_stg

T_sd

- 40 to + 85

- 40 to +100

260

ꢀC

t ≤10sec

ꢀC

R_thJA

450

K/W

Document Number 81075

Rev. 3, 06-Jun-03

www.vishay.com

TSML3710

Vishay Semiconductors

VISHAY

Basic Characteristics

T_amb= 25 ꢀC, unless otherwise specified

Parameter

Test condition

Symbol

V_F

Min

Typ.

1.35

Max

1.7

Unit

Forward Voltage

I_F= 100 mA, t_p= 20 ms

I_F= 1 A, t_p= 100 µs

I_F= 1 mA

V_F

TK_VF

I_R

2.6

3.2

Temp. Coefficient of V_F

Reverse Current

-1.85

mV/K

µA

V_R= 5 V

100

Junction Capacitance

Radiant Intensity

V_R= 0 V, f = 1 MHz, E = 0

I_F= 100 mA, t_p= 20 ms

I_F= 1 A, t_p= 100 µs

I_F= 100 mA, t_p= 20 ms

I_F= 100 mA

C_j

I_e

mW/sr

I_e

-0.6

Radiant Power

φ_e

Temp. Coefficient of φ_e

TK_φe

%/K

Angle of Half Intensity

Peak Wavelength

λ_p

deg

I_F= 100 mA

I_F= 20 mA

I_F= 1 A

950

Spectral Bandwidth

Temp. Coefficient of λ_p

Rise Time

∆λ

nm/K

TK_λp

0.2

t_r

t_f

800

500

800

500

Fall Time

I_F= 20 mA

I_F= 1 A

Typical Characteristics (T

= 25 °C unless otherwise specified)

amb

250

200

150

125

100

thJA

100

10 20 30 40 50 60 70 80 90 100

– Ambient Temperature ( °C )

10 20 30 40 50 60 70 80 90 100

– Ambient Temperature ( °C )

16846

16847

amb

Figure 1. Power Dissipation vs. Ambient Temperature

Figure 2. Forward Current vs. Ambient Temperature

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Document Number 81075

Rev. 3, 06-Jun-03

TSML3710

Vishay Semiconductors

VISHAY

100

10000

1000

0.1

0.05

0.02

/T = 0.01

0.2

0.5

1.0

100

0.1

0.01

0.10

1.00

10.00

100.00

- Forward Current ( mA )

14335

- Pulse Duration ( ms )

15903

Figure 3. Pulse Forward Current vs. Pulse Duration

Figure 6. Radiant Intensity vs. Forward Current

1000

100

= 100 s

t /T = 0.001

0.1

I - Forward Current ( mA )

- Forward Voltage ( V )

13600

94 8740

Figure 4. Forward Current vs. Forward Voltage

Figure 7. Radiant Power vs. Forward Current

1.2

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

= 20 mA

1.1

1.0

0.9

0.8

0.7

= 1 mA

10 20 30 40 50 60 70 80 90 100

– Ambient Temperature ( °C )

–10 0 10 20 30 40 50 60 70 80 90 100

16848

amb

16849

– Ambient Temperature ( °C )

amb

Figure 5. Forward Voltage vs. Ambient Temperature

Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature

Document Number 81075

Rev. 3, 06-Jun-03

www.vishay.com

TSML3710

Vishay Semiconductors

VISHAY

1.25

1.0

0.75

0.5

0.25

= 100 mA

950

1000

900

94 7994 e

Wavelength ( nm )

Figure 9. Relative Radiant Power vs. Wavelength

0°

10°

20°

30°

40°

1.0

0.9

50°

60°

0.8

0.7

70°

80°

0.6

0.6 0.4 0.2

0.2

0.4

94 8013

Figure 10. Relative Radiant Intensity vs. Angular Displacement

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Document Number 81075

Rev. 3, 06-Jun-03

TSML3710

Vishay Semiconductors

VISHAY

Package Dimensions in mm

95 11314

Pad Layout

95 10966

Document Number 81075

Rev. 3, 06-Jun-03

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TSML3710

Vishay Semiconductors

VISHAY

Temperature - Time Profile

Adhesive Tape

94 8625

300

10 s

max. 240

ca. 230 C

250

200

Blister Tape

215

150

100

max 40 s

max. 160

90 s - 120 s

Lead Temperature

94 8670

Component Cavity

full line

dotted line : process limits

: typical

2 K/s - 4 K/s

Figure 12. Blister Tape

100

150

200

250

Time ( s )

Figure 11. Infrared Reflow Soldering Optodevices (SMD Package)

3.5

3.1

2.2

2.0

Drypack

Devices are packed in moisture barrier bags (MBB) to

prevent the products from moisture absorption during

transportation and storage. Each bag contains a des-

iccant.

5.75

5.25

4.0

3.6

8.3

7.7

3.6

3.4

Floor Life

1.85

1.65

Floor life (time between soldering and removing from

MBB) must not exceed the time indicated in

J-STD-020.

0.25

1.6

1.4

4.1

3.9

4.1

3.9

2.05

1.95

TSML 3710 is released for:

94 8668

Moisture Sensitivity Level 2, according to JEDEC,

J-STD-020

Figure 13. Tape Dimensions in mm for PLCC-2

Floor Life: 1 year

Conditions: Tamb < 30ꢀC, RH < 60%

Drying

In case of moisture absorption devices should be

baked before soldering. Conditions see J-STD-020 or

Label.

Devices taped on reel dry using recommended condi-

tions 192 h @ 40ꢀC (+ 5ꢀC), RH < 5%

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Document Number 81075

Rev. 3, 06-Jun-03

TSML3710

Vishay Semiconductors

VISHAY

Missing Devices

Cover Tape Removal Force

A maximum of 0.5% of the total number of

components per reel may be missing, exclusively

missing components at the beginning and at the end

of the reel. A maximum of three consecutive

components may be missing, provided this gap is

followed by six consecutive components.

The removal force lies between 0.1 N and 1.0 N at a

removal speed of 5 mm/s.

In order to prevent components from popping out of

the bliesters, the cover tape must be pulled off at an

angle of 180ꢀ with regard to the feed direction.

De-reeling direction

94 8158

> 160 mm

40 empty

min. 75 empty

compartments

Tape leader

Carrier leader

Carrier trailer

Figure 14. Beginning and End of Reel

The tape leader is at least 160 mm and is followed by

a carrier tape leader with at least 40 empty

compartements. The tape leader may include the

carrier tape as long as the cover tape is not connected

to the carrier tape.

The least comoponent is followed by a carrier tape

trailer with a least 75 empty compartements and

sealed with cover tape.

10.0

9.0

120

4.5

3.5

13.00

12.75

2.5

1.5

63.5

60.5

Identification

Label:

Tfk

Type

Group

Tape Code

Production

Code

14.4 max.

180

178

Quantity

94 8665

Figure 15. Dimensions of Reel

Document Number 81075

Rev. 3, 06-Jun-03

www.vishay.com

TSML3710

Vishay Semiconductors

VISHAY

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the

use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com

Document Number 81075

Rev. 3, 06-Jun-03

TSML3710 [VISHAY]

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