TSUS4400_08 [VISHAY]
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs; 红外发光二极管，符合RoHS ， 950纳米，砷化镓
| 型号： | TSUS4400_08 |
| 厂家： | 
VISHAY |
| 描述： | Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| 文件： | 总5页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSUS4400
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): ∅ 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = 18°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
94 8636
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
APPLICATIONS
TSUS4400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue tinted plastic package.
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSUS4400
15
18
950
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSUS4400
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
IF
Forward current
100
200
2
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
Tj
170
100
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
Tsd
- 40 to + 85
- 40 to + 100
260
°C
°C
t ≤ 5 s, 2 mm from case
°C
J-STD-051, leads 7 mm,
soldered on PCB
Thermal resistance junction/ambient
RthJA
300
K/W
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81054
Rev. 1.6, 05-Sep-08
TSUS4400
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Vishay Semiconductors
120
100
80
180
160
140
120
100
80
RthJA = 300 K/W
60
40
20
0
RthJA = 300 K/W
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
21316
21315
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.3
MAX.
UNIT
V
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 100 mA
VF
VF
TKVF
IR
1.7
Forward voltage
2.2
V
Temperature coefficient of VF
Reverse current
- 1.3
mV/K
µA
V
R = 5 V
R = 100 µA
R = 0 V, f = 1 MHz, E = 0
100
35
Breakdown voltage
I
V(BR)
Cj
5
7
40
30
µA
Junction capacitance
V
pF
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 20 mA
Ie
15
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
140
20
Radiant power
φe
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
TKφe
ϕ
- 0.8
18
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
λp
950
50
Spectral bandwidth
Δλ
TKλp
tr
nm
Temperature coefficient of λp
0.2
800
400
800
400
2.1
nm/K
ns
Rise time
tr
ns
IF = 100 mA
IF = 1.5 A
tf
ns
Fall time
tf
ns
Virtual source diameter
d
mm
Note
Tamb = 25 °C, unless otherwise specified
Document Number: 81054
Rev. 1.6, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
277
TSUS4400
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1
1000
100
10
10
t
/T= 0.01, I
= 2 A
FM
p
0.02
0
10
0.05
0.1
1
0.2
0.5
-1
0.1
10
-2
-1
0
1
2
0
1
2
3
4
10
10
10
10
10
10
10
10
10
10
I
F - Forward Current (mA)
94 7982
tp - Pulse Duration (ms)
94 7947
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Intensity vs. Forward Current
104
103
102
101
100
10-1
1000
100
10
1
0.1
0
1
2
3
4
0
1
2
3
4
10
10
10
10
10
IF - Forward Current (mA)
V
F - Forward Voltage (V)
94 7980
94 7996
Fig. 4 - Forward Current vs. Forward Voltage
1.2
Fig. 7 - Radiant Power vs. Forward Current
1.6
1.1
1.2
IF = 10 mA
IF = 20 mA
1.0
0.9
0.8
0.7
0.8
0.4
0
0
20
40
60
80
100
140
- 10 0 10
50
100
Tamb - Ambient Temperature (°C)
94 7990
Tamb - Ambient Temperature (°C)
94 7993
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
www.vishay.com
278
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81054
Rev. 1.6, 05-Sep-08
TSUS4400
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Vishay Semiconductors
°
10
°
20
0°
1.25
1.0
30°
40°
1.0
0.9
0.75
0.5
0.25
0
50°
60°
0.8
70°
0.7
IF = 100 mA
80°
1000
900
950
0.6
0.6 0.4 0.2
0
0.2
0.4
λ - Wavelength (nm)
94 7994
94 7983
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
C
A
R 1.4 (sphere)
Area not plane
0.1
2.9
+ 0.15
- 0.05
0.4
0.15
0.6
technical drawings
according to DIN
specifications
2.54 nom.
Drawing-No.: 6.544-5255.02-4
Issue: 3; 23.04.98
95 10914
Document Number: 81054
Rev. 1.6, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
279
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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