V40100PGW [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器
| 型号： | V40100PGW |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
V40100PGW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.42 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TO-3PW
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PIN 1
PIN 3
PIN 2
CASE
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
2 x 20 A
100 V
Base P/N-M3
- halogen-free and RoHS compliant,
commercial grade
250 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
E
AS at L = 70 mH
VF at IF = 20 A
TJ max.
250 mJ
0.67 V
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100PGW
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
40
V
per device
per diode
Maximum average forward rectified current (fig. 1)
IF(AV)
A
20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
EAS
250
250
1.0
A
mJ
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 70 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C 2 °C per diode
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Document Number: 89180
Revision: 09-Feb-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
V40100PGW
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
I
R = 1.0 mA
TA = 25 °C
TA = 25 °C
VBR
100 (minimum)
-
V
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
0.49
0.58
0.76
0.42
0.54
0.67
16
-
-
0.85
-
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
-
0.73
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 70 V
8.3
-
(2)
Reverse current per diode
IR
69
1000
47
VR = 100 V
21
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100PGW
UNIT
per diode
per device
2.0
1.4
Typical thermal resistance
RθJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
30/tube
DELIVERY MODE
TO-3PW
V40100PGW-M3/4W
4.5
4W
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
50
40
30
20
10
0
18
16
14
12
10
8
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
6
4
2
D = tp/T
16
tp
0
0
0
25
50
75
100
125
150
175
4
8
12
20
24
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89180
Revision: 09-Feb-10
New Product
V40100PGW
Vishay General Semiconductor
100
10
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
1000
TA = 25 °C
1
0.1
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
1000
10
Junction to Case
100
TA = 150 °C
TA = 125 °C
10
1
1
0.1
TA = 25 °C
0.01
0.001
0.1
0.01
20
30
40
50
60
70
80
90
100
0.1
1
10
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3PW
0.645 (16.38)
0.175 (4.45)
0.625 (15.87)
0.165 (4.19)
0.551 (14.00)
0.537 (13.64)
0.050 (1.27)
3° Ref.
R0.155 (R3.94)
R0.145 (R3.68)
0.323 (8.20)
0.313 (7.95)
30° Ref.
0.245 (6.23)
0.225 (5.72)
0.077 (1.96)
0.063 (1.60)
0.170 (4.32)
10° Typ.
Both Sides
0.840 (21.34)
0.820 (20.83)
0.467 (11.86)
0.453 (11.51)
0.079 (2.01)
0.065 (1.65)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.160 (4.06)
0.140 (3.56)
5° Ref.
Both Sides
3° Ref.
3° Ref.
0.090 (2.29)
0.080 (2.03)
0.098 (2.50)
0.083 (2.12)
0.565 (14.35)
0.545 (13.84)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.030 (0.75)
0.020 (0.50)
0.225 (5.72)
0.205 (5.21)
Document Number: 89180
Revision: 09-Feb-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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1
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