VB30100C-M3_15 [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier;
| 型号： | VB30100C-M3_15 |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VB30100C-M3
Vishay General Semiconductor
www.vishay.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
1
VB30100C
TYPICAL APPLICATIONS
PIN 1
PIN 2
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
2 x 15 A
100 V
MECHANICAL DATA
IF(AV)
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
VRRM
IFSM
160 A
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
VF at IF = 15 A
TJ max.
0.63 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variation
Common cathode
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB30100C
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
30
V
per device
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
IFSM
A
A
15
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
160
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Revision: 15-May-13
Document Number: 87984
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30100C-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.516
0.576
0.734
0.455
0.522
0.627
7.2
MAX.
UNIT
IF = 5 A
-
IF = 7.5 A
IF = 15 A
IF = 5 A
TA = 25 °C
-
0.80
-
Instantaneous forward voltage
VF
V
per diode (1)
IF = 7.5 A
IF = 15 A
TA = 125 °C
-
0.68
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 70 V
8.0
-
Reverse current per diode (2)
IR
65
500
35
VR = 100 V
20
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB30100C
UNIT
Typical thermal resistance per diode
RJC
2.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VB30100C-M3/4W
VB30100C-M3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.39
1.39
4W
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
14
12
10
8
D = 0.8
D = 0.5
Resistive or Inductive Load
D = 0.3
D = 0.2
30
25
20
15
10
5
D = 0.1
D = 1.0
6
T
4
2
D = tp/T
12
tp
0
0
0
0
25
50
75
100
125
150
2
4
6
8
10
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 15-May-13
Document Number: 87984
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30100C-M3
Vishay General Semiconductor
www.vishay.com
100
10
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
TA = 25 °C
1
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance
100
10
Junction to Case
TA = 150 °C
10
1
0.1
T
A = 125 °C
1
0.1
TA = 25 °C
0.01
0.001
0.01
0.001
V(B,J)30100C
10 100
10
20
30
40
50
60
70
80
90 100
0.01
0.1
1
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 15-May-13
Document Number: 87984
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
Document Number: 91000
1
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