VBT10200C-E3-4W [VISHAY]
Trench MOS Barrier Schottky Rectifier; Trench MOS势垒肖特基整流器
| 型号： | VBT10200C-E3-4W |
| 厂家： | 
VISHAY |
| 描述： | Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
TO-220AB
ITO-220AB
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-220AB and TO-262AA package)
3
3
2
2
1
1
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
VT10200C
VFT10200C
PIN 1
PIN 1
PIN 2
CASE
PIN 2
PIN 3
PIN 3
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
TO-263AB
TO-262AA
K
K
MECHANICAL DATA
2
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
3
1
2
1
VBT10200C
VIT10200C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PIN 1
PIN 2
K
PIN 1
PIN 2
K
HEATSINK
PIN 3
Polarity: As marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-lbs maximum
IF(AV)
2 x 5.0 A
200 V
VRRM
IFSM
80 A
VF at IF = 5.0 A
TJ max.
0.65 V
150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT10200C VFT10200C VBT10200C VIT10200C
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
10.0
5.0
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
EAS
80
30
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
mJ
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C per diode
IRRM
dV/dt
VAC
0.5
10 000
A
V/μs
V
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
1500
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Document Number: 89177
Revision: 09-Dec-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
I
R = 1.0 mA
TA = 25 °C
VBR
200 (minimum)
-
-
V
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
0.81
1.10
0.58
0.65
1.7
TA = 25 °C
1.60
-
(1)
Instantaneous forward voltage per diode
Reverse current per diode
VF
V
TA = 125 °C
0.73
-
TA = 25 °C
TA =125°C
TA = 25 °C
TA =125°C
μA
mA
μA
VR = 180 V
VR = 200 V
1.8
-
(2)
IR
-
150
10
2.5
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT10200C
VFT10200C
VBT10200C
VIT10200C
UNIT
per diode
per device
3.5
7.0
5.5
3.5
2.5
3.5
2.5
Typical thermal resistance
RθJC
°C/W
2.5
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
VT10200C-E3/4W
VFT10200C-E3/4W
VBT10200C-E3/4W
VBT10200C-E3/8W
VIT10200C-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.88
1.72
1.37
1.37
1.44
4W
4W
4W
8W
4W
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
10
9
D = 0.8
Resistive or Inductive Load
D = 0.5
V(B,I)T10200C
D = 0.3
10
8
8
7
D = 0.2
6
D = 1.0
VFT10200C
6
4
2
0
5
4
3
2
1
0
D = 0.1
T
Mounted on Specific Heatsink
D = tp/T
tp
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10 11
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Device
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89177
Revision: 09-Dec-09
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
100
10
1
1000
TA = 150 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 100 °C
TA = 125 °C
100
TA = 25 °C
0.1
10
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
10
Junction to Case
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
0.1
VFT10200C
V(B,I)T10200C
0.01
0.001
0.0001
TA = 25 °C
1
0.01
0.1
1
10
100
20
30
40
50
60
70
80
90
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
Document Number: 89177
Revision: 09-Dec-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.415 (10.54) MAX.
0.384 (9.75)
0.185 (4.70)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
7° REF.
0.113 (2.87)
0.103 (2.62)
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.145 (3.68)
0.135 (3.43)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.580 (14.73)
PIN
2
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
3
1
2
3
7° REF.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.950 (24.13)
0.510 (12.95)
0.470 (11.94)
PIN
0.920 (23.37)
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
PIN 1
PIN 3
PIN 2
0.045 (1.14)
HEATSINK
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
0.245 (6.22)
MIN
(10.66)
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591(15.00)
1
K
2
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
(0.095) (2.41)
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89177
Revision: 09-Dec-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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