VS-ETU1506FP-M3 [VISHAY]

DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULL PACK-2, Rectifier Diode;
VS-ETU1506FP-M3
型号: VS-ETU1506FP-M3
厂家: VISHAY    VISHAY
描述:

DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULL PACK-2, Rectifier Diode

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VS-ETU1506-M3,VS-ETU1506FP-M3  
www.vishay.com  
Vishay Semiconductors  
Ultra Fast Rectifier, 15 A FRED Pt®  
FEATURES  
4
• Low forward voltage drop  
• Ultrafast soft recovery time  
• 175 °C operating junction temperature  
• Low leakage current  
1
1
• Fully isolated package (VINS = 2500 VRMS  
)
2
2
• True 2 pin package  
TO-220AC 2L  
TO-220 FullPAK 2L  
• Designed and qualified according to  
JEDEC®-JESD 47  
Base  
cathode  
4
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION  
1
2
1
2
Cathode  
Anode  
Cathode  
Anode  
State of the art, ultralow VF, soft-switching ultrafast  
rectifiers optimized for Discontinuous (Critical) Mode (DCM)  
Power Factor Correction (PFC).  
VS-ETU1506-M3  
VS-ETU1506FP-M3  
The minimized conduction loss, optimized stored charge  
and low recovery current minimized the switching losses  
and reduce over dissipation in the switching element and  
snubbers.  
PRIMARY CHARACTERISTICS  
Package  
TO-220AC 2L, TO-220FullPAK 2L  
IF(AV)  
15 A  
600 V  
1.1 V  
The device is also intended for use as a freewheeling diode  
in power supplies and other power switching applications.  
VR  
VF at IF  
APPLICATIONS  
trr (typ.)  
24 ns  
175 °C  
Single  
AC/DC SMPS 70 W to 400 W  
e.g. laptop and printer AC adaptors, desktop PC, TV and  
monitor, games units and DVD AC/DC power supplies.  
TJ max.  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
600  
V
TC = 151 °C  
C = 103 °C  
TJ = 25 °C  
Average rectified forward current in DC  
IF(AV)  
15  
FullPAK  
T
A
Non-repetitive peak surge current  
IFSM  
160  
Operating junction and storage temperatures  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
600  
-
-
V
-
-
-
-
-
-
1.35  
1.1  
0.01  
20  
1.9  
1.3  
15  
200  
-
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
12  
pF  
nH  
Measured lead to lead 5 mm from package body  
8
-
Revision: 31-May-17  
Document Number: 93534  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506-M3,VS-ETU1506FP-M3  
www.vishay.com  
Vishay Semiconductors  
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V  
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
24  
MAX.  
UNITS  
-
-
-
-
-
-
-
-
-
-
-
28  
47  
-
36  
Reverse recovery time  
trr  
ns  
40  
TJ = 125 °C  
87  
-
IF = 15 A  
TJ = 25 °C  
5
-
Peak recovery current  
IRRM  
dIF/dt = 200 A/μs  
TJ = 125 °C  
A
9
-
VR = 390 V  
TJ = 25 °C  
107  
430  
53  
-
Reverse recovery charge  
Qrr  
nC  
TJ = 125 °C  
-
Reverse recovery time  
Peak recovery current  
Reverse recovery charge  
trr  
-
ns  
A
IF = 15 A  
IRRM  
Qrr  
TJ = 125 °C  
dIF/dt = 800 A/μs  
25  
-
VR = 390 V  
730  
-
nC  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
-65  
-
175  
°C  
-
-
1.2  
3.7  
1.4  
4.3  
Thermal resistance,  
junction to case  
RthJC  
FULL-PAK  
Thermal resistance,  
junction to ambient  
°C/W  
RthJA  
RthCS  
Typical socket mount  
-
-
-
70  
-
Typical thermal resistance,  
case to heatsink  
Mounting surface, flat, smooth and greased  
0.5  
-
-
2
-
-
g
Weight  
0.07  
oz.  
6
(5)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style TO-220AC 2L  
ETU1506  
ETU1506FP  
Case style TO-220 FullPAK 2L  
Revision: 31-May-17  
Document Number: 93534  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506-M3,VS-ETU1506FP-M3  
www.vishay.com  
Vishay Semiconductors  
100  
1000  
175 °C  
100  
TJ = 175 °C  
150 °C  
10  
125 °C  
100 °C  
75 °C  
50 °C  
1
0.1  
10  
TJ = 150 °C  
25 °C  
500  
0.01  
TJ = 25 °C  
1.5  
0.001  
0.0001  
1
0
100  
200  
300  
400  
600  
0.5  
1.0  
2.0  
2.5  
VR - Reverse Voltage (V)  
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage  
VF - Forward Voltage Drop (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
1000  
100  
10  
1
0
100  
200  
300  
400  
500  
600  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
1
D = 0.5  
D = 0.2  
D = 0.1  
0.1  
D = 0.05  
D = 0.02  
D = 0.01  
Single Pulse  
(Thermal Resistance)  
0.01  
1E-05  
1E-04  
1E-03  
1E-02  
1E-01  
1E+00  
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
Revision: 31-May-17  
Document Number: 93534  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506-M3,VS-ETU1506FP-M3  
www.vishay.com  
Vishay Semiconductors  
10  
D = 0.5  
1
D = 0.2  
D = 0.1  
D = 0.05  
D = 0.02  
D = 0.01  
Single Pulse  
(Thermal Resistance)  
0.1  
1E-05  
1E-04  
1E-03  
1E-02  
1E-01  
1E+00  
1E+01  
1E+02  
t1 - Rectangular Pulse Duration (s)  
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FullPAK)  
180  
170  
160  
150  
140  
130  
180  
160  
140  
DC  
120  
DC  
100  
80  
60  
40  
20  
0
2
4
6
8
10  
12  
14  
16  
0
2
4
6
8
10  
12  
14  
16  
IF(AV) - Average Forward Current (A)  
IF(AV) - Average Forward Current (A)  
Fig. 6 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
Fig. 7 - Maximum Allowable Case Temperature vs.  
Average Forward Current (FullPAK)  
30  
25  
20  
15  
10  
5
RMS Limit  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
DC  
0
0
5
10  
15  
20  
25  
IF(AV) - Average Forward Current (A)  
Fig. 8 - Forward Power Loss Characteristics  
Revision: 31-May-17  
Document Number: 93534  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506-M3,VS-ETU1506FP-M3  
www.vishay.com  
Vishay Semiconductors  
120  
110  
100  
90  
900  
800  
700  
IF = 15 A, 125 °C  
IF = 15 A, 125 °C  
600  
80  
500  
400  
300  
70  
60  
50  
IF = 15 A, 25 °C  
typical value  
IF = 15 A, 25 °C  
40  
200  
30  
100  
20  
typical value  
0
10  
100  
1000  
100  
1000  
dIFdt (A/μs)  
dIFdt (A/μs)  
Fig. 9 - Typical Reverse Recovery vs. dIF/dt  
Fig. 10 - Typical Stored Charge vs. dIF/dt  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 11 - Reverse Recovery Waveform and Definitions  
Revision: 31-May-17  
Document Number: 93534  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506-M3,VS-ETU1506FP-M3  
www.vishay.com  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS-  
E
T
U
15  
06  
FP -M3  
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product  
Circuit configuration:  
E = single diode  
2
-
3
4
5
6
7
-
-
-
-
-
T = TO-220  
U = hyperfast recovery time  
Current code: 15 = 15 A  
Voltage code: 06 = 600 V  
None = TO-220  
FP = FullPAK  
8
-
Environmental digit:  
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
VS-ETU1506-M3  
VS-ETU1506FP-M3  
QUANTITY PER TUBE  
MINIMUM ORDER QUANTITY  
PACKAGING DESCRIPTION  
Antistatic plastic tube  
50  
50  
1000  
1000  
Antistatic plastic tube  
LINKS TO RELATED DOCUMENTS  
TO-220AC 2L  
www.vishay.com/doc?95259  
Dimensions  
TO-220 FullPAK 2L  
TO-220AC 2L  
www.vishay.com/doc?95260  
www.vishay.com/doc?95391  
www.vishay.com/doc?95392  
www.vishay.com/doc?96130  
www.vishay.com/doc?96131  
Part marking information  
SPICE model  
TO-220 FullPAK 2L  
TO-220AC 2L  
TO-220 FullPAK 2L  
Revision: 31-May-17  
Document Number: 93534  
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
www.vishay.com  
True 2 Pin TO-220 FULL-PAK  
DIMENSIONS in millimeters and inches  
A
Ø Q  
F
E
Q1  
H1  
D
Q2  
θ
L1  
b1  
L
b
C
e
J1  
MILLIMETERS  
INCHES  
SYMBOL  
MIN.  
MAX.  
4.93  
MIN.  
0.178  
0.028  
0.045  
0.014  
0.617  
0.392  
MAX.  
0.194  
0.036  
0.055  
0.021  
0.633  
0.408  
A
b
4.53  
0.71  
1.15  
0.36  
15.67  
9.96  
0.91  
b1  
C
1.39  
0.53  
D
16.07  
10.36  
E
e
5.08 typical  
0.200 typical  
F
2.34  
6.50  
2.56  
12.78  
2.23  
2.98  
3.10  
14.80  
0°  
2.74  
6.90  
2.96  
13.18  
2.63  
3.38  
3.50  
15.20  
5°  
0.092  
0.256  
0.101  
0.503  
0.088  
0.117  
0.122  
0.583  
0°  
0.107  
0.272  
0.117  
0.519  
0.104  
0.133  
0.138  
0.598  
5°  
H1  
J1  
L
L1  
Ø Q  
Q1  
Q2  
Revision: 05-Dec-12  
Document Number: 95260  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

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