VS-MURB1520PBF [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 15A, 200V V(RRM), Silicon, D2PAK-3;
VS-MURB1520PBF
型号: VS-MURB1520PBF
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 15A, 200V V(RRM), Silicon, D2PAK-3

快速恢复大电源 超快恢复二极管 快速恢复二极管 超快恢复大功率电源 高功率电源
文件: 总8页 (文件大小:160K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-MURB1520PbF, VS-MURB1520-1PbF  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 15 A FRED Pt®  
FEATURES  
VS-MURB1520-1PbF  
VS-MURB1520PbF  
• Ultrafast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Base  
cathode  
• AEC-Q101 qualified  
2
2
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION/APPLICATIONS  
1
3
1
3
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance  
of forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
N/C  
Anode  
N/C  
Anode  
D2PAK  
TO-262  
PRODUCT SUMMARY  
IF(AV)  
15 A  
200 V  
1.05 V  
35 ns  
VR  
VF at IF  
trr  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
TJ max.  
Package  
Diode variation  
175 °C  
TO-263AB (D2PAK), TO-262AA  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
200  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
V
Total device, rated VR, TC = 150 °C  
Rated VR, square wave, 20 kHz, TC = 150 °C  
15  
IFSM  
200  
A
IFM  
30  
TJ, TStg  
-65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
200  
-
-
V
-
-
-
-
-
-
-
-
1.05  
0.85  
10  
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
-
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
500  
-
Junction capacitance  
Series inductance  
CT  
LS  
55  
8.0  
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 04-Mar-14  
Document Number: 94082  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-MURB1520PbF, VS-MURB1520-1PbF  
www.vishay.com  
Vishay Semiconductors  
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
-
-
-
-
35  
-
Reverse recovery time  
trr  
22  
ns  
TJ = 125 °C  
39  
-
IF = 15 A  
dIF/dt = 200 A/μs  
TJ = 25 °C  
1.6  
4.1  
19  
-
Peak recovery current  
IRRM  
A
TJ = 125 °C  
-
V
R = 160 V  
TJ = 25 °C  
-
Reverse recovery charge  
Qrr  
nC  
TJ = 125 °C  
90  
-
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and  
storage temperature range  
TJ, TStg  
-65  
-
175  
°C  
Thermal resistance,   
junction to case  
RthJC  
RthJA  
RthCS  
-
-
-
-
-
1.5  
50  
-
Thermal resistance,   
junction to ambient  
°C/W  
Thermal resistance,   
case to heatsink  
Mounting surface, flat, smooth and  
greased  
0.5  
-
-
2.0  
-
-
g
Weight  
0.07  
oz.  
6.0  
(5.0)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style D2PAK  
Case style TO-262  
MURB1520  
MURB1520-1  
100  
10  
1
1000  
100  
10  
TJ = 175 °C  
TJ = 150 °C  
TJ = 125 °C  
TJ = 100 °C  
TJ = 175 °C  
TJ = 150 °C  
TJ = 25 °C  
1
0.1  
TJ = 25 °C  
0.1  
0.01  
0
50  
100  
150  
200  
250  
0
0.3  
0.6  
0.9  
1.2  
1.5  
VR - Reverse Voltage (V)  
VF - Forward Voltage Drop (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
Revision: 04-Mar-14  
Document Number: 94082  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-MURB1520PbF, VS-MURB1520-1PbF  
www.vishay.com  
Vishay Semiconductors  
1000  
100  
10  
TJ = 25 °C  
1
10  
100  
1000  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
1
0.1  
PDM  
t1  
D = 0.50  
D = 0.20  
D = 0.10  
D = 0.05  
D = 0.02  
D = 0.01  
t2  
Notes:  
1. Duty factor D = t1/t2  
2. Peak TJ = PDM x ZthJC + TC  
.
Single pulse  
(thermal resistance)  
.
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
180  
170  
160  
150  
140  
130  
25  
20  
15  
10  
RMS limit  
DC  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.10  
D = 0.20  
D = 0.50  
Square wave (D = 0.50)  
Rated VR applied  
5
DC  
See note (1)  
0
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
IF(AV) - Average Forward Current (A)  
Fig. 6 - Forward Power Loss Characteristics  
IF(AV) - Average Forward Current (A)  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
Revision: 04-Mar-14  
Document Number: 94082  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-MURB1520PbF, VS-MURB1520-1PbF  
www.vishay.com  
Vishay Semiconductors  
60  
50  
40  
30  
20  
10  
200  
VR = 160 V  
TJ = 125 °C  
TJ = 25 °C  
VR = 160 V  
TJ = 125 °C  
TJ = 25 °C  
160  
120  
80  
40  
0
IF = 30 A  
IF = 15 A  
IF = 8 A  
IF = 30 A  
IF = 15 A  
IF = 8 A  
100  
1000  
100  
1000  
dIF/dt (A/µs)  
dIF/dt (A/µs)  
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt  
Fig. 8 - Typical Stored Charge vs. dIF/dt  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC;  
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 9 - Reverse Recovery Waveform and Definitions  
Revision: 04-Mar-14  
Document Number: 94082  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-MURB1520PbF, VS-MURB1520-1PbF  
www.vishay.com  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS- MUR  
B
15  
20  
-1 TRL PbF  
1
2
3
4
5
6
7
8
1
2
3
4
5
6
-
-
-
-
-
-
Vishay Semiconductors product  
Ultrafast MUR series  
B = D2PAK/TO-262  
Current rating (15 = 15 A)  
Voltage rating (20 = 200 V)  
None = D2PAK  
-1 = TO-262  
-
-
7
8
None = Tube (50 pieces)  
TRL = Tape and reel (left oriented, for D2PAK package)  
TRR = Tape and reel (right oriented, for D2PAK package)  
PbF = Lead (Pb)-free  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
QUANTITY PER T/R  
MINIMUM ORDER QUANTITY  
PACKAGING DESCRIPTION  
VS-MURB1520PbF  
50  
1000  
800  
Antistatic plastic tube  
13" diameter reel  
VS-MURB1520TRRPbF  
VS-MURB1520TRLPbF  
VS-MURB1520-1PbF  
800  
800  
50  
800  
13" diameter reel  
1000  
Antistatic plastic tube  
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95014  
Part marking information  
Packaging information  
SPICE model  
www.vishay.com/doc?95008  
www.vishay.com/doc?95032  
www.vishay.com/doc?95271  
Revision: 04-Mar-14  
Document Number: 94082  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay High Power Products  
D2PAK, TO-262  
DIMENSIONS FOR D2PAK in millimeters and inches  
Conforms to JEDEC outline D2PAK (SMD-220)  
B
A
Pad layout  
A
(2)(3)  
E
A
(E)  
c2  
11.00  
MIN.  
(0.43)  
(3)  
D
L1  
4
2
9.65  
(0.38)  
MIN.  
(D1) (3)  
Detail A  
17.90 (0.70)  
15.00 (0.625)  
H
(2)  
1
3
3.81  
MIN.  
L2  
(0.15)  
B
B
2.32  
MIN.  
(0.08)  
A
B
2.64 (0.103)  
2.41 (0.096)  
(3)  
E1  
2 x b2  
2 x b  
C
c
View A - A  
0.004 M  
Base  
Metal  
0.010 M  
M
B
A
Plating  
(4)  
b1, b3  
2 x  
e
H
Gauge  
plane  
(4)  
c1  
(c)  
B
0° to 8°  
Seating  
plane  
Lead assignments  
L3  
A1  
Lead tip  
(b, b2)  
L
Diodes  
L4  
Detail “A”  
Rotated 90 °CW  
Section B - B and C - C  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
Scale: None  
Scale: 8:1  
MILLIMETERS  
SYMBOL  
INCHES  
MILLIMETERS  
INCHES  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
MAX.  
4.83  
0.254  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
MIN.  
6.86  
9.65  
7.90  
MAX.  
8.00  
MIN.  
MAX.  
0.315  
0.420  
0.346  
A
A1  
b
D1  
E
0.270  
0.380  
0.311  
3
2, 3  
3
10.67  
8.80  
E1  
e
b1  
b2  
b3  
c
4
4
4
2
2.54 BSC  
0.100 BSC  
H
14.61  
1.78  
-
15.88  
2.79  
1.65  
1.78  
0.575  
0.070  
-
0.625  
0.110  
0.066  
0.070  
L
L1  
L2  
L3  
L4  
3
c1  
c2  
D
1.27  
0.050  
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
Notes  
(1)  
(7)  
Dimensioning and tolerancing per ASME Y14.5 M-1994  
Dimension D and E do not include mold flash. Mold flash shall not  
exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conforms to JEDEC outline TO-263AB  
(2)  
(3)  
(4)  
(5)  
(6)  
Datum A and B to be determined at datum plane H  
Controlling dimension: inch  
Document Number: 95014  
Revision: 31-Mar-09  
For technical questions concerning discrete products, contact: diodes-tech@vishay.com  
For technical questions concerning module products, contact: ind-modules@vishay.com  
www.vishay.com  
1
Outline Dimensions  
Vishay High Power Products  
D2PAK, TO-262  
DIMENSIONS FOR TO-262 in millimeters and inches  
Modified JEDEC outline TO-262  
(2) (3)  
E
A
(Datum A)  
B
A
c2  
E
A
(3)  
L1  
D
Seating  
plane  
D1(3)  
1
2
3
C
C
L2  
B
B
L (2)  
A
c
(3)  
E1  
3 x b2  
3 x b  
A1  
Section A - A  
2 x e  
Base  
metal  
(4)  
b1, b3  
Plating  
c
M
M
B
0.010  
A
Lead assignments  
c1  
(4)  
Diodes  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
(b, b2)  
Lead tip  
Section B - B and C - C  
Scale: None  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
MIN.  
4.06  
2.03  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
6.86  
9.65  
7.90  
MAX.  
4.83  
3.02  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
8.00  
10.67  
8.80  
MIN.  
0.160  
0.080  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
0.270  
0.380  
0.311  
MAX.  
0.190  
0.119  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
0.315  
0.420  
0.346  
A
A1  
b
b1  
b2  
b3  
c
4
4
4
c1  
c2  
D
2
3
D1  
E
2, 3  
3
E1  
e
2.54 BSC  
0.100 BSC  
L
13.46  
-
14.10  
1.65  
3.71  
0.530  
-
0.555  
0.065  
0.146  
L1  
L2  
3
3.56  
0.140  
Notes  
(1)  
(6)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Dimension D and E do not include mold flash. Mold flash shall not  
exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conform to JEDEC TO-262 except A1 (maximum), b  
(minimum) and D1 (minimum) where dimensions derived the  
actual package outline  
(2)  
(3)  
(4)  
(5)  
Controlling dimension: inches  
www.vishay.com  
2
For technical questions concerning discrete products, contact: diodes-tech@vishay.com  
For technical questions concerning module products, contact: ind-modules@vishay.com  
Document Number: 95014  
Revision: 31-Mar-09  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
conform to JEDEC JS709A standards.  
Revision: 02-Oct-12  
Document Number: 91000  
1

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Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-262AA,
VISHAY

VS-MURB1620CT-1P

暂无描述
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VS-MURB1620CT-1PbF

Ultrafast Rectifier, 2 x 8 A FRED Pt®
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VS-MURB1620CT-1TRLP

Rectifier Diode,
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VS-MURB1620CT-1TRLPBF

Rectifier Diode,
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VS-MURB1620CT-1TRRP

Rectifier Diode,
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VS-MURB1620CTPBF

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
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VS-MURB1620CTTRLP

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
VISHAY

VS-MURB1620CTTRLPBF

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2
VISHAY

VS-MURB1620CTTRRPBF

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2
VISHAY