SS8050D-G [WEITRON]
Transistor;
| 型号： | SS8050D-G |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS8050
NPN General Purpose Transistors
TO-92
P b
Lead(Pb)-Free
1. EMITTER
2. BASE
1
2
3
3. COLLECTOR
MAXIMUM RATINGS(T =25˚C unless otherwise noted)
A
Rating
Symbol
Value
Unit
V
CBO
CEO
40
25
Collector-Base Voltage
V
V
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
EBO
5
V
A
Collector Current-Continuous
I
C
1.5
Total Device Dissipation T =25°C
P
W
°C
A
1.0
D
T ,T
Junction and Storage, Temperature
-55 to +150
J
stg
ELECTRICAL CHARACTERISTICS (T =25˚C unless otherwise noted)
A
Characteristics
Symbol
Unit
Max
Min
40
Typ
Collector-Base Breakdown Voltage
I =100µA, I =0
V
-
-
V
V
-
-
(BR)CBO
(BR)CEO
C
E
Collector-Emitter Breakdown Voltage
I =0.1mA, I =0
V
V
25
C
B
Emitter Base Breakdown Voltage
I =100µA, I =0
5
-
-
-
-
-
V
(BR)EBO
E
C
Collector cut-off current
=40V, I =0
µA
I
0.1
0.1
CBO
V
CB
E
Emitter cut-off current
=20V, I =0
µA
µA
-
I
I
CEO
EBO
V
CE
E
Emitter cut-off current
-
-
0.1
V
=5V, I =0
EB
C
WEITRON
http://www.weitron.com.tw
1/4
19-Jul-05
SS8050
ON CHARACTERISTICS
DC Current Gain
(1)
(2)
h
h
400
-
V
V
=1V, I =100mA
85
40
-
FE
FE
CE
CE
C
-
=1V, I =800 mA
C
Collector-Emitter Saturation Voltage
I =800mA, I =80mA
V
-
-
-
-
V
V
0.5
1.2
CE(sat)
BE(sat)
C
B
Base-Emitter Saturation Voltage
I =800mA, I =80mA
V
C
B
Base-Emitter ON Voltage
=1V, I =10mA)
V
-
-
1
V
BE(ON)
V
CE
C
DYNAMIC CHARACTERISTICS
Transition frequency
CE
-
f
T
MHz
100
-
V
=10 V, I =50 mA, f=30MHz
C
CLASSIFICATION OF h
FE(2)
Rank
B
C
D
E
Range
85-160
120-200
160-300
300-400
WEITRON
http://www.weitron.com.tw
2/4
19-Jul-05
SS8050
1000
100
10
0.5
0.4
0.3
0.2
0.1
VCE=1V
I
3.0mA
B=
I
B=
2.5mA
2.0mA
I
B=
I
1.5mA
1.0mA
0.5mA
B=
I
B=
I
B=
1
0
0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
100
1000
(mA)
IC, COLLECTOR CURRENT
(VoLTS)
VCE , COLLECTOR-EMITTER VOLTAGE
FIG.1 Static Characteristic
FIG.2 DC Current Gain
10000
1000
100
100
10
IC=10 IB
VCE =1V
VBE (sat)
1
0
VCE (sat)
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
IC , COLLECTOR CURRENT (mA)
(VoLTS)
VBE, BASE-EMITTER VOLTAGE
FIG.3 Base-Emitter On Voltage
FIG.4 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
1000
100
VCE =10V
f=1.0 MHz
IE=0
10
1
1
1
10
100
400
10
100
V
,COLLECTOR-BASE VOLTAGE(V)
I ,COLLECTORN CURRENT
CE
C
FIG.6 Collector Output Capacitance
FIG.5 Current Gain Bandwidth Product
WEITRON
http://www.weitron.com.tw
3/4
19-Jul-05
SS8050
TO-92 Outline Dimensions
unit:mm
E
TO-92
Dim
A
B
C
D
E
G
H
J
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
3.70
1.40
0.55
0.51
4.70
-
C
4.70
J
1.270TYP
K
K
2.44
2.64
14.50
L
14.10
G
WEITRON
http://www.weitron.com.tw
4/4
19-Jul-05
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