WSD501H [WEITRON]
Surface Monut Schottky Barrier Diode; 表面Monut肖特基二极管
| 型号： | WSD501H |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Monut Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WSD501H
Surface Monut Schottky Barrier Diode
SCHOTTKY BARRIER
RECTIFIERS
Features:
100m AMPERES
40 VOLTS
*Extremely Low V .
F
*Very Small Conduction Losses.
*Schottky Barrier Diodes Encapsulated in SOD-323 Package.
1
2
SOD-323
Unit:mm
SOD-323 Outline Demensions
MILLMETERS
Dim Min
Max
1.60
1.80
A
B
C
D
E
H
J
1.15
0.80
0.25
1.35
1.00
0.40
0.15 REF
0.00
0.089
2.30
0.10
0.377
2.70
K
PIN 1.CATHODE
2.ANODE
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WSD501H
MAXIMUM RATING
Characteristics
Symbol
WSD 501H
Unit
Volts
Breakdown Voltage
B
V
45
40
Continuous Reverse Voltage
Average Rectified Forward Current
Volts
V
I
R
100
mAmps
O
Peak Forward Surge Current
(8.3ms1/2 Sine Wave)
I
1.0
Amps
C
FSM
T
-40 to+125
Storage Temperature
stg
ELECTRICAL CHARACTERISTICS (Ta=25 C)
Characteristics Symbol
WSD 501H
Unit
Device Marking
JV
Maximum Instantneous Forward Voltage
IF=100mA
V
I
Volts
0.55
F
Maximum Instantneous Reverse Current
30
20
µAmps
R
(V =10V)
R
Typical Junction Capacitance
C
P
f
J
(V =10V, f=1MHz)
R
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WSD501H
Electrical characteristics curves (Ta=25 C unless specified otherwise)
1000
100
10m
1m
100µ
10µ
1µ
10
1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
FORWARD VOLTAGE:V (V)
REVERSE VOLTAGE:V (V)
R
F
FIG: 1 Forward characteristics
Fig.2 Reverse characteristics
100
10
1
100
80
60
40
20
0
0
25
50
75
100
125
0
5
10
15 20
25
30
35
AMBIENT TEMPERATURE : Ta ( C)
REVERSE VOLTASGE : VR (V)
Fig.3 Capacitance between
terminals characteristics
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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相关型号：
WSD520BS
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
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