FCX658ATC [ZETEX]
Transistor, SO89-3;
| 型号： | FCX658ATC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Transistor, SO89-3 |
| 文件： | 总4页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 NPN SILICON PLANAR
FCX658A
MEDIUM POWER HIGH VOLTAGE TRANSISTOR
ISSUE 1 – NOVEMBER 2000
FEATURES
C
*
*
*
*
400 Volt VCEO
0.5 Amp continuous current
Ptot=1 Watt
Optimised hfe characterised upto 200mA
E
C
APPLICATIONS
*
*
*
*
Telephone dialler circuits
Hook switches for modems
Predrivers within HID lamp ballasts
(SLIC) Subscriber Line Interface Cards
B
SOT89
Partmarking Detail - 65A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
400
400
5
V
V
Peak Pulse Current
1
A
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
FCX658A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO
400
400
5
480
465
7.8
V
IC=100µA
IC=10mA*
IE=100µA
VCB=320V
VCE=320V
VEB=4V
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V(BR)CEO)
V(BR)EBO
ICBO
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
100
100
100
nA
nA
nA
Collector Cut-Off
Current
ICES
Emitter Cut-Off
Current
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.165
0.125
0.2
V
V
V
IC=20mA, IB=1mA
IC=50mA, IB=5mA*
IC=100mA,
IB=10mA*
Base-Emitter
VBE(sat)
VBE(on)
hFE
0.75
0.70
0.85
0.85
V
V
IC=100mA,
IB=10mA*
Saturation Voltage
Base-Emitter
Turn On Voltage
IC=100mA, VCE=5V*
Static Forward
Current Transfer
Ratio
85
150
170
130
90
IC=1mA, VCE=5V*
100
55
IC=10mA, VCE=10V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
35
Transition
Frequency
fT
50
MHz IC=20mA, VCE=20V
f=20MHz
Output Capacitance Cobo
10
pF
VCB=20V, f=1MHz
Switching times
ton
toff
130
3300
ns
ns
IC=100mA, VC=100V
I
I
B1=10mA,
B2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
NB
For high voltage applications the appropriate industry sector PCB guidelines should be
considered with regard to voltage spacing between conductors.
FCX658A
TYPICAL CHARACTERISTICS
-55°C
+25°C
+100°C
I
C
B
/I
=20
=50
B
=10
T
amb=25°C
IC/IB=10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
IC/IB
/I
1.0
0.8
0.6
0.4
0.2
0
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
C
C
I
I
- Collector Current (Amps)
- Collector Current (Amps)
V
CE(sat) v I
C
V
CE(sat) v I
C
-55°C
+25°C
+100°C
+100°C
+25°C
-55°C
V
CE=10V
IC/IB=10
1.6
1.4
1.6
1.4
1.2
300
200
100
1.2
1.0
0.8
1.0
0.8
0.6
0.6
0.4
0.4
0.2
0
0.2
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
I
C
- Collector Current (Amps)
FE v I
IC
- Collector Current (Amps)
BE(sat) v I
h
C
V
C
Single Pulse Test at Tamb=25°C
1.0
0.1
-55°C
+25°C
+100°C
V
CE=10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
D.C.
1s
100ms
10ms
0.01
1.0ms
0.1ms
0.2
0
0.001
0.01
0.1
1
10 20
0.001
1
10
100
1000
I
C
- Collector Current (Amps)
BE(on) v I
VCE - Collector Voltage (Volts)
V
C
Safe Operating Area
FCX658
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Case
Rth(j-amb)1
Rth(j-case)
125
10
°C/W
°C/W
4.0
120
100
80
60
40
20
0
D=1
D=t1
tP
t1
3.0
2.0
tP
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
1.0
100us
1ms
10ms 100ms
Pulse Width
Transient Thermal Resistance
1s
10s
100s
0
20
40
60
80
100
120
140
160
T - Ambient Temperature
A
SOT89 (1W) Derating
Transient thermal resistance for a Zetex
1W SOT89 device mounted on a 15 mm x
15 mm ceramic substrate
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
3701-04 Metroplaza, Tower 1
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
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Commack NY 11725
USA
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Internet:http://www.zetex.com
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