FCX688B [DIODES]
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR; SOT89 NPN硅功率（开关）晶体管
| 型号： | FCX688B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR |
| 文件： | 总3页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 NPN SILICON POWER
FCX688B
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
*
*
*
*
2W POWER DISSIPATION
10A Peak Pulse Current
Excellent HFE Characteristics up to 10 Amps
Extremely Low Saturation Voltage
C
E
Complimentary Type -
Partmarking Detail -
FCX789A
688
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
12
12
5
V
V
V
A
A
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at Tamb=25°C
10
3
IC
Ptot
1 †
2 ‡
W
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
†
‡
recommended Ptot calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX688B
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
PARAMETER
SYMBOL Min
Typ
Max
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 12
IC=100µA
Collector-Emitter
V(BR)CEO 12
V
V
IC=10mA*
Breakdown Voltage
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
IE=100µA
Collector Cut-Off Current ICBO
0.1
0.1
VCB=9V
VEB=4V
µA
µA
Emitter Cut-Off Current
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
40
mV
mV
mV
mV
mV
IC=0.1A, IB=1mA *
IC=0.1A, IB=0.5mA *
IC=1A, IB=10mA *
IC=3A, IB=10mA *
IC=4A, IB=50mA *
60
180
350
400
IC=3A, IB=20mA *
Base-Emitter
VBE(sat)
VBE(on)
hFE
1.1
V
Saturation Voltage
Base-Emitter
Turn-On Voltage
1.0
V
IC=3A, VCE=2V *
Static Forward Current
Transfer
Ratio
500
400
100
IC=100mA, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
Transition Frequency
fT
150
MHz
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
200
40
pF
pF
VEB=0.5V, f=1MHz
Cobo
VCB=10V, f=1MHz
ton
toff
40
500
ns
ns
IC=500mA, IB1=IB2=50mA
VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
FCX688B
TYPICAL CHARACTERISTICS
-55°C
+25°C
+100°C
+175°C
Tamb=25°C
IC/IB=200
IC/IB=100
IC/IB=10
IC/IB=100
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
0
0.01
0.1
1
10
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+175°C
VCE=2V
1.6
IC/IB=100
1.6
1.4
1.2
1.5K
1K
1.4
1.2
1.0
0.8
1.0
0.8
0.6
0.4
0.6
0.4
0.2
500
0.2
0
0
0
0.01
0.1
10
1
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
1
-55°C
+25°C
+100°C
+175°C
VCE=2V
1.6
1.4
1.2
1.0
0.8
0.6
DC
1s
100ms
10ms
1ms
0.1
100us
0.4
0.2
0
0.01
100m
0
1
10
100
0.01
0.1
1
10
VCE - Collector Voltage (Volts)
IC - Collector Current (Amps)
VBE(on) v IC
Safe Operating Area
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