UZVN3310ASTOB [ZETEX]
Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | UZVN3310ASTOB |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 开关 晶体管 |
| 文件： | 总3页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN3310A
ISSUE 2 – MARCH 94
FEATURES
*
*
100 Volt VDS
RDS(on)= 10Ω
D
G
S
E-Line
TO92 Com patible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo ltag e
100
200
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C
Pu ls e d Dra in Cu rre n t
ID
mA
A
IDM
2
Ga te-S o u rce Vo lta g e
VGS
V
± 20
Po w e r Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
625
mW
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre akd o w n
Vo lta g e
BVDS S
100
V
ID=1m A, VGS=0V
Ga te-S o u rce Th res h o ld
Vo lta g e
VGS (th )
0.8
2.4
20
V
ID=1m A, VDS= VGS
Ga te-Bo d y Lea ka g e
IGS S
IDS S
n A
VGS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e Dra in
Cu rre n t
1
50
VDS=100V, VGS=0
µA
µA
VDS=80V, VGS=0V, T=125°C(2)
On -S ta te Dra in Cu rre n t(1)
ID(o n )
500
100
m A
VDS=25V, VGS=10V
VGS=10V,ID=500m A
S ta tic Drain -S o u rce On -S ta te
Res is ta n ce (1)
RDS (o n )
10
Ω
Fo rw a rd Tra n s co n d u ctan ce(1)(2g fs
)
m S
VDS=25V,ID=500m A
In p u t Ca p a citan ce (2)
Cis s
Co s s
40
15
p F
p F
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
VDS=25V, VGS=0V, f=1MHz
Reve rs e Tra n s fe r Ca p acita n ce Crs s
(2)
5
p F
Tu rn -On De lay Tim e (2)(3)
Ris e Tim e (2)(3)
td (o n )
5
7
6
7
n s
n s
n s
n s
tr
VDD ≈25V, ID=500m A
Tu rn -Off De la y Tim e (2)(3)
Fa ll Tim e (2)(3)
td (o ff)
tf
3-378
ZVN3310A
TYPICAL CHARACTERISTICS
1.4
1.6
VGS=
1.4
1.2
1.0
10V
9V
VGS=
1.2
1.0
10V
9V
8V
7V
6V
8V
0.8
7V
6V
0.8
0.6
0.6
0.4
0.2
0
5V
5V
0.4
0.2
0
4V
3V
4V
3V
0
10
20
30
40
50
0
2
4
6
8
10
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
1.4
10
VDS=
25V
1.2
1.0
8
6
4
2
0.8
0.6
0.4
0.2
0
ID=
1A
0.5A
0.2A
0
0
2
4
6
8
10
0
4
8
12
16
20
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
100
2.4
2.2
2.0
1.8
1.6
ID=-0.5A
e
R
c
n
ta
s
esi
R
rce
u
10
o
1.4
1.2
1.0
0.8
0.6
S
-
n
ID=
1A
0.5A
0.2A
Drai
0.4
1
-80 -60 -40 -20
0 20 40 60 80 100 120 140 160
1
2
3
4
5
6
7
8 9 10
20
VGS-Gate Source Voltage (Volts)
T-Temperature (C°)
Normalised RDS(on) and VGS(th) vs Temperature
On-resistance vs gate-source voltage
3-379
ZVN3310A
TYPICAL CHARACTERISTICS
160
160
VDS= 25V
VDS= 25V
120
80
120
80
40
0
40
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
VGS-Gate Source Voltage (Volts)
ID- Drain Current (Amps)
Transconductance v drain current
Transconductance v gate-source voltage
VDS=
50V
20V
80V
16
14
50
40
30
ID=0.6A
12
10
8
Ciss
20
10
0
6
4
2
0
Coss
Crss
0
10
20
40
50
30
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Q-Charge (nC)
0
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-380
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