UZXT951KTC [ZETEX]

Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3;


型号：	UZXT951KTC
厂家：	ZETEX SEMICONDUCTORS
描述：	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 开关晶体管
文件：	总6页 (文件大小：137K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ZXT951K

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK

SUMMARY

BV_CEO= -60V : R_SAT= 53m typical; I_C= -6A

DESCRIPTION

Packaged in the D-PAK outline this high current high perform ance 60V PNP

transistor offers low on state losses m aking it ideal for use in DC-DC circuits

and various driving and power m anagem ent functions.

FEATURES

DPAK

• 6 am ps continuous current

• Up to 15 am ps peak current

• Low equivalent on resistance

• Low saturation voltages

APPLICATIONS

• DC - DC converters

• DC - DC m odules

• Power switches

• Motor control

• Autom otive circuits

• Inverter circuits

PINOUT

ORDERING INFORMATION

DEVICE

REEL

SIZE

TAPE

WIDTH

QUANTITY PER

REEL

ZXT951KTC

13”

16m m

2500 units

DEVICE MARKING

TOP VIEW

• ZXT951

ISSUE 2 - DECEMBER 2003

S E M IC O N D U C T O R S

ZXT951K

ABSOLUTE MAXIMUM RATINGS

PARAMETER

S YMBOL

LIMIT

-100

-60

UNIT

Co lle cto r-b a s e vo lta g e

Co lle cto r-e m itte r vo lta g e

Em itte r-b a s e vo lta g e

CBO

CER

CEO

EBO

-7

Pe a k p u ls e cu rre n t

-15

(b )

Co n tin u o u s co lle cto r cu rre n t

-6

Ba s e cu rre n t

-0.5

(a )

Po w e r d is s ip a tio n a t T =25°C

2.1

Lin e a r d e ra tin g fa cto r

16.8

3.2

m W/°C

(b )

(c)

Po w e r d is s ip a tio n a t T =25°C

Lin e a r d e ra tin g fa cto r

25.6

4.2

m W/°C

Po w e r d is s ip a tio n a t T =25°C

Lin e a r d e ra tin g fa cto r

33.6

-55 to +150

m W/°C

°C

Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e

T , T

j s tg

THERMAL RESISTANCE

PARAMETER

S YMBOL

VALUE

UNIT

°C/W

(a )

J u n ctio n to a m b ie n t

⍜J A

(b )

J u n ctio n to a m b ie n t

(c)

J u n ctio n to a m b ie n t

NOTES

(a) (For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper in still air conditions.

(b) For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper in still air conditions.

(c) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper in still air conditions.

ISSUE 2 - DECEMBER 2003

S E M IC O N D U C T O R S

ZXT951K

TYPICAL CHARACTERISTICS

ISSUE 2 - DECEMBER 2003

S E M IC O N D U C T O R S

ZXT951K

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

am b

PARAMETER

S YMBOL

MIN.

-100

-60

TYP. MAX. UNIT CONDITIONS

Co lle cto r-b a s e b re a kd o w n vo lta g e

Co lle cto r-e m itte r b re a kd o w n vo lta g e

Em itte r-b a s e b re a kd o w n vo lta g e

Co lle cto r cu t-o ff cu rre n t

-125

-80

I =-100␮A

CBO

CER

CEO

EBO

I =-100␮A, R =Յ1k⍀

I =-10m A*

-7

-8.1

Ͻ1

I =-100␮A

-20

n A

=-80V

CBO

Co lle cto r cu t-o ff cu rre n t

Ͻ1

=-80V, R =Յ1k⍀

CER

EBO

Em itte r cu t-o ff cu rre n t

Ͻ1

-10

=-6V

Co lle cto r-e m itte r s a tu ra tio n vo lta g e

-13

-25

m V I =-0.1A, I =-10m A*

C B

CE(S AT)

-60

-90

m V I =-1A, I =-100m A*

C B

-115

-315

-1.05

-165

-400

-1.2

m V I =-2A, I =-200m A*

C B

m V I =-6A, I =-600m A*

Ba s e -e m itte r s a tu ra tio n vo lta g e

Ba s e -e m itte r tu rn -o n vo lta g e

m V I =-6A, I =-600m A*

C B

BE(S AT)

BE(ON)

-0.92 -1.05

230

m V I =-6A, V =-1V*

C CE

S ta tic fo rw a rd cu rre n t tra n s fe r ra tio

100

I =-10m A, V =-1V*

C CE

200

110

300

I =-2A, V =-1V*

C CE

I =-6A, V =-1V*

I =-10A, V =-1V*

C CE

Tra n s itio n fre q u e n cy

120

MHz I =-100m A, V =-10V

f=50MHz

Ou tp u t ca p a cita n ce

S w itch in g tim e s

p F

=-10V, f=1MHz*

OBO

n S I =-2A, V =-10V,

OFF

350

=I =-200m A

B1 B2

* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.

ISSUE 2 - DECEMBER 2003

S E M IC O N D U C T O R S

ZXT951K

TYPICAL CHARACTERISTICS

ISSUE 2 - DECEMBER 2003

S E M IC O N D U C T O R S

ZXT951K

PACKAGE OUTLINE

Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches

PACKAGE DIMENSIONS

Millim eters

Inches

Min

Millim eters

Min Max

2.30 BSC

Inches

Min Max

0.090 BSC

DIM

Min

2.18

ᎏ

Max

0.094

0.005

0.035

0.045

0.215

0.024

0.023

0.245

2.38

0.127

0.89

1.114

5.46

0.609

0.584

6.22

ᎏ

0.086

9.40

1.40

10.41

1.78

0.370

0.055

0.410

0.070

0.635

0.762

5.20

0.457

5.97

5.20

6.35

4.32

0.025

0.030

0.205

0.018

0.235

0.205

0.250

0.170

⍜1Њ

⍜Њ

2.74 REF

0.051 BSC

0.108 REF

0.020 BSC

0.89

1.27

1.01

1.52

10Њ

0.035

0.050

0.040

0.060

10Њ

0.635

1.14

0Њ

0.025

0.045

0Њ

6.73

ᎏ

0.265

0Њ

15Њ

0Њ

15Њ

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ISSUE 2 - DECEMBER 2003

S E M IC O N D U C T O R S

UZXT951KTC [ZETEX]

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