ZDT694TC [ZETEX]
Power Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN;
| 型号： | ZDT694TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Power Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM-8 DUAL NPN MEDIUM POWER
ZDT694
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
C1
C1
C2
C2
B1
E1
B2
E2
SM-8
PARTMARKING DETAIL T694
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
120
120
V
5
V
Peak Pulse Current
1
0.5
A
Continuous Collector Current
IC
A
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Ptot
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die on
Both die on equally
2.25
2.75
W
W
Derate above 25°C*
Any single die on
Both die on equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 342
ZDT694
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO
Voltage
120
120
5
V
V
V
IC=100µA
IC=10mA*
IE=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
Emitter-Base Breakdown
Voltage
V(BR)EBO
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
0.1
0.1
VCB=100V
µA
µA
VEB=4V
Collector-Emitter Saturation VCE(sat)
Voltage
0.25
0.5
V
V
IC=0.1A, IB=0.5mA*
IC=0.4A, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
0.9
0.9
V
V
IC=1A, IB=10mA*
IC=1A, VCE=2V*
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
500
400
150
IC=100mA, VCE=2V*
IC=200mA, VCE=2V*
IC=400mA, VCE=2V*
Transition Frequency
fT
130
MHz IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
200
9
pF
pF
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
IC=100mA, IB1=10mA
Cobo
ton
toff
80
2900
ns
ns
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 343
ZDT694
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I
- Collector Current (Amps)
VBE(on) v IC
3 - 344
相关型号：
ZDT705TA
Power Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
ZETEX
ZDT705TC
Power Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
DIODES
ZDT717TA
Power Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
DIODES
ZDT717TC
Power Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
DIODES
ZDT749TC
Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
DIODES
©2020 ICPDF网 联系我们和版权申明