ZDT717 [ZETEX]
DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS; 双PNP中功率高增益晶体管
| 型号： | ZDT717 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS |
| 文件： | 总3页 (文件大小：1957K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM-8 DUAL PNP MEDIUM POWER
ZDT717
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
C1
C1
C2
C2
B1
E1
B2
E2
SM-8
PARTMARKING DETAIL T717
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-12
-12
V
-5
V
Peak Pulse Current
-10
A
Continuous Collector Current
IC
-2.5
A
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Ptot
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die on
Both die on equally
2
2.5
W
W
Derate above 25°C*
Any single die on
Both die on equally
16
20
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
62.5
50
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 348
ZDT717
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
V(BR)CBO
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
-12
-12
-5
-35
-25
-8.5
V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-10V
VEB=-4V
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
V
Emitter-Base
Breakdown Voltage
V
Collector Cutoff
Current
-100
-100
-100
nA
nA
nA
Emitter Cutoff
Current
IEBO
Collector Emitter
Cutoff Current
ICES
VCES=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
-10
-100
-110
-180
-17
-140
-170
-220
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-1.5A, IB=-50mA*
IC=-2.5A, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.9
-1.0
V
IC=-2.5A, IB=-50mA*
Base-Emitter
Turn-On Voltage
-0.8
-1.0
V
IC=-2.5A, VCE=-2V*
Static Forward
Current Transfer
Ratio
300
300
180
60
475
450
275
100
70
IC=-10mA, VCE=-2V*
IC=-100mA, VCE=-2V*
IC=-2.5A, VCE=-2V*
IC=-8A, VCE=-2V*
45
IC=-10A, VCE=-2V*
Transition
Frequency
fT
80
110
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance Cobo
21
30
pF
ns
ns
VCB=-10V, f=1MHz
Turn-On Time
Turn-Off Time
ton
toff
70
VCC=-6V, IC=-2A
IB1=IB2=50mA
130
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 349
ZDT717
3 - 350
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