ZDT705TA [ZETEX]
Power Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN;
| 型号： | ZDT705TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Power Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN 晶体 晶体管 达林顿晶体管 光电二极管 |
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM-8 DUAL PNP MEDIUM POWER
ZDT705
DARLINGTON TRANSISTORS
ISSUE 1 - NOVEMBER 1995
C1
C1
C2
C2
B1
E1
B2
E2
SM-8
PARTMARKING DETAIL T705
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
-140
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
ICM
-120
V
-10
V
Peak Pulse Current
-4
A
Continuous Collector Current
IC
-1
A
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Ptot
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die on
Both die on equally
2.25
2.75
W
W
Derate above 25°C*
Any single die on
Both die on equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 345
ZDT705
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN. MAX.
-140
UNIT
V
CONDITIONS.
Collector-Base Breakdown V(BR)CBO
Voltage
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -120
V
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-10
IE=-100µA
Collector Cutoff Current
ICBO
-0.1
-10
V
CB=-120V
µA
µA
VCB=-120V, T
=100°C
amb
Collector Cutoff Current
Emitter Cutoff Current
ICES
-10
V
CE=-80V
EB=-8V
µA
µA
IEBO
-0.1
V
Collector-Emitter
Saturation Voltage
VCE(sat)
-1.3
-2.5
V
V
IC=-1A, IB=-1mA*
IC=-2A, IB=-2mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1.8
-1.7
V
V
IC=-1A, IB=-10mA*
IC=-1A, VCE=-5V*
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer Ratio
3K
3K
3K
2K
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-1A, VCE=-5V*
30K
IC=-2A, VCE=-5V*
Transition Frequency
fT
160 Typical
MHz
IC=-100mA, VCE=-10V
f=20MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
Cobo
ton
90 Typical
15 Typical
0.6 Typical
0.8 Typical
pF
pF
µs
µs
VEB=-0.5V, f=1MHz
VCE=-10V, f=1MHz
IC=-0.5A, VCE=-10V
I
B1=IB2=-0.5mA
toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 346
ZDT705
TYPICAL CHARACTERISTICS
-55°C
+25°C
+100°C
+175°C
IC/IB=1000
+100°C
+25°C
-55°C
VCE=-5V
1.8
1.6
1.4
1.2
16k
14k
12k
10k
1.0
0.8
0.6
0.4
8k
6k
4k
2k
0
0.2
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
FE
h
C
v I
VCE(sat) v IC
2.4
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
VCE=-5V
IC/IB=1000
1.8
1.6
1.4
1.2
2.2
2.0
1.8
1.6
1.0
0.8
0.6
0.4
0.2
1.4
1.2
1.0
0.8
0.6
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
BE(sat)
BE(on)
V
C
v I
C
v I
V
3 - 347
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