ZXM64P03XTC [ZETEX]

30V P-CHANNEL ENHANCEMENT MODE MOSFET; 30V P沟道增强型MOSFET


型号：	ZXM64P03XTC
厂家：	ZETEX SEMICONDUCTORS
描述：	30V P-CHANNEL ENHANCEMENT MODE MOSFET 30V P沟道增强型MOSFET 晶体小信号场效应晶体管开关光电二极管
文件：	总7页 (文件大小：208K)
中文：	中文翻译
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ZXM64P03X

30V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V_(BR)DSS=-30V; R_DS(ON)=0.075⍀; I_D=-3.8A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique

structure that combines the benefits of low on-resistance with fast switching

speed. This makes them ideal for high efficiency, low voltage, power

management applications.

MSOP8

FEATURES

•

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

Low profile SOIC package

APPLICATIONS

•

DC - DC Converters

Power Management Functions

Disconnect switches

Motor control

ORDERING INFORMATION

DEVICE

REEL SIZE

(inches)

TAPE WIDTH (mm)

QUANTITY

PER REEL

ZXM64P03XTA

ZXM64P03XTC

12mm embossed

1000 units

4000 units

Top View

DEVICE MARKING

•

ZXM4P03

PROVISIONAL ISSUE A - JULY 1999

145

ZXM64P03X

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_DSS

V_GS

LIMIT

-30

UNIT

Drain-Source Voltage

Gate- Source Voltage

± 20

Continuous Drain Current (V_GS=4.5V; T_A=25°C)(b)

(V_GS=4.5V; T_A=70°C)(b)

I_D

-3.8

-3.0

Pulsed Drain Current (c)

I_DM

I_S

-19

-2.3

-19

Continuous Source Current (Body Diode)(b)

Pulsed Source Current (Body Diode)(c)

I_SM

P_D

Power Dissipation at T_A=25°C (a)

Linear Derating Factor

1.1

8.8

mW/°C

Power Dissipation at T_A=25°C (b)

Linear Derating Factor

P_D

1.8

14.4

mW/°C

Operating and Storage Temperature Range

T_j:T_stg

-55 to +150

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

R_θJA

VALUE

113

UNIT

°C/W

Junction to Ambient (a)

Junction to Ambient (b)

R_θJA

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр10 secs.

Impedance graph.

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146

ZXM64P03X

CHARACTERISTICS

100

2.0

Refer Note (a)

1.5

1.0

0.5

Refer Note (b)

Refer Note (a)

100ms

10ms

1ms

100us

100m

0.1

100

80 100 120 140 160

-VDS - Drain-Source Voltage (V)

T - Temperature (°C)

Safe Operating Area

Derating Curve

120

Refer Note (b)

Refer Note (a)

D=0.5

D=0.2

D=0.1

Single Pulse

0.0001 0.001

0.01

0.1

100

0.0001 0.001 0.01

0.1

100 1000

Pulse Width (s)

Transient Thermal Impedance

PROVISIONAL ISSUE A - JULY 1999

147

ZXM64P03X

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

V_(BR)DSS-30

I_DSS

I_D=-250µA, V_GS=0V

V_DS=-30V, V_GS=0V

V_GS=± 20V, V_DS=0V

-1

µA

I_GSS

±100

Gate-Source Threshold Voltage

V_GS(th)

R_DS(on)

g_fs

-1.0

2.3

I_D=-250µA, V_DS

V_GS

Static Drain-Source On-State Resistance

(1)

0.075

0.100

V_GS=-10V, I_D=-2.4A

V_GS=-4.5V, I_D=-1.2A

Ω

Forward Transconductance (3)

DYNAMIC (3)

V_DS=-10V,I_D=-1.2A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Turn-On Delay Time

Rise Time

C_iss

C_oss

C_rss

825

250

V_DS=-25 V, V_GS=0V,

f=1MHz

t_d(on)

t_r

t_d(off)

t_f

4.4

6.2

_DD=-15V, I_D=-2.4A

R_G=6.2Ω, R_D=6.2Ω

(Refer to test

circuit)

Turn-Off Delay Time

Fall Time

29.2

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

Q_g

V_DS=-24V,V_GS=-10V,

I_D=-2.4A

(Refer to test

circuit)

Q_gs

Q_gd

11.5

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V_SD

-0.95

T_j=25°C, I_S=-2.4A,

V_GS=0V

Reverse Recovery Time (3)

Reverse Recovery Charge(3)

t_rr

30.2

27.8

T_j=25°C, I_F=-2.4A,

di/dt= 100A/µs

Q_rr

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JULY 1999

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ZXM64P03X

TYPICAL CHARACTERISTICS

100

+25°C

+150°C

-VGS

4.5V

10V

10V 6V

4.5V

3.5V

2.5V

100m

0.1

100

0.1

100

-VDS - Drain-Source Voltage (V)

Output Characteristics

100

1.7

1.5

1.3

1.1

0.9

0.7

0.5

RDS(on)

T=+25°C

VGS=-10V

ID=-2.4A

T=+150°C

VGS=VDS

ID=-250uA

VGS(th)

VDS=-10V

100m

2.5

3.5

4.5

5.5

-100

+100

+200

-VGS - Gate-Source Voltage (V)

Tj - Junction Temperature (°C)

Typical Transfer Characteristics

Normalised RDS(on) and VGS(th)

v Temperature

100m

10m

100

Vgs=-3V

Vgs=-4.5V

Vgs=-10V

T=+150 C

T=+25 C

100m

10m

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-I - Drain Current (A)

-V - Source-Drain Voltage (V)

On-Resistance v Drain Current

Source-Drain Diode Forward Voltage

PROVISIONAL ISSUE A - JULY 1999

149

ZXM64P03X

TYPICAL CHARACTERISTICS

1600

1200

800

400

Vgs=0V

ID=-2.4A

f=1MHz

Ciss

Coss

VDS=-24V

VDS=-15V

Crss

0.1

100

-VDS - Drain Source Voltage (V)

Q -Charge (nC)

Capacitance v Drain-Source Voltage

Gate-Source Voltage v Gate Charge

Basic Gate Charge Waveform

Gate Charge Test Circuit

Switching Time Waveforms

Switching Time Test Circuit

PROVISIONAL ISSUE A - JULY 1999

150

ZXM64P03X

PACKAGE DIMENSIONS

DIM

Millimetres

Inches

MIN

MAX

0.043

0.006

0.016

0.009

0.122

BSC

1.10

0.15

0.40

0.23

3.10

BSC

3.10

BSC

0.70

6°

0.05

0.25

0.13

2.90

0.65

2.90

4.90

0.40

0°

0.002

0.010

0.005

0.114

0.0256

0.114

0.193

0.016

0°

e X 6

θ°

0.122

BSC

0.028

6°

Conforms to JEDEC MO-187 Iss A

q°

PAD LAYOUT DETAILS

Zetex plc.

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)

Fax: (44)161 622 4420

Zetex GmbH

Zetex Inc.

Zetex (Asia) Ltd.

These are supported by

Streitfeldstraße 19

D-81673 München

Germany

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

47 Mall Drive, Unit 4

Commack NY 11725

USA

Telephone: (516) 543-7100

Fax: (516) 864-7630

3510 Metroplaza, Tower 2

Hing Fong Road,

Kwai Fong, Hong Kong

Telephone:(852) 26100 611

Fax: (852) 24250 494

agents and distributors in

major countries world-wide

Zetex plc 1999

Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any

purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the

right to alter without notice the specification, design, price or conditions of supply of any product or service.

PROVISIONAL ISSUE A - JULY 1999

152

ZXM64P03XTC [ZETEX]

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