ZXTP25020CFF [ZETEX]
20V, SOT23F, PNP medium power transistor; 20V ， SOT23F ， PNP中功率晶体管
| 型号： | ZXTP25020CFF |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 20V, SOT23F, PNP medium power transistor |
| 文件： | 总8页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTP25020CFF
20V, SOT23F, PNP medium power transistor
Summary
BV
BV
> -20V
CEO
ECO
> -7V
I
= -4.5A
C(cont)
R
= 41m⍀
< -65mV @ 1A
CE(sat)
V
CE(sat)
P = 1.5W
D
Description
C
E
Advanced process capability and packaging maximise the power
handling and performance of this small outline transistor. The reverse
blocking capability of the transistor can often result in the elimination of
a series connected Schottky diode commonly required with either bipolar
transistors or MOSFETs when used in battery charging applications.
B
Features
•
•
•
•
•
20V PNP
Very low saturation voltage
7V reverse blocking capability
High pulse current
E
B
C
Low profile SOT23F package
Applications
Pinout - top view
•
•
•
•
•
•
Mobile phone charging circuits
Disconnect switch in portable products
High side driving
Motor control
DC-DC convertors
MOSFET and IGBT gate driving
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXTP25020CFFTA
Device marking
1F4
7
8
3000
Issue 1 - February 2007
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ZXTP25020CFF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
V
V
V
-25
V
CBO
CEO
ECO
EBO
Collector-emitter voltage
-20
-7
V
V
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
-7
V
(c)
I
-4.5
-10
-1
A
A
A
W
Continuous collector current
C
Peak pulse current
Base current
(a)
I
CM
I
B
P
P
P
P
0.79
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
=25°C
=25°C
=25°C
D
D
D
D
amb
amb
amb
amb
6.3
mW/°C
W
(b)
(c)
(d)
1.13
9
mW/°C
W
1.50
12.0
1.96
mW/°C
W
15.7
mW/°C
°C
Operating and storage temperature range
T , T
-55 to 150
j
stg
Thermal resistance
Parameter
Symbol
Value
Unit
(a)
R
158.7
°C/W
Junction to ambient
⍜JA
(b)
R
110.4
83.3
63.7
°C/W
°C/W
°C/W
Junction to ambient
⍜JA
(c)
R
Junction to ambient
⍜JA
(d)
R
Junction to ambient
⍜JA
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d)As (c) above measured at t<5secs.
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ZXTP25020CFF
Characteristics
Issue 1 - February 2007
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ZXTP25020CFF
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BV
BV
BV
BV
-25
-20
-7
-50
-35
V
V
V
V
I = -100A
C
CBO
CEO
EBO
ECX
(*)
Collector-emitter breakdown
voltage (base open)
I = -10mA
C
Emitter-base breakdown
voltage
-8.2
-8.0
I = -100A
E
(*)
Emitter-collector breakdown
voltage (reverse blocking)
-7
I = -100A
R
< 10k⍀
BC
E
or -0.25 < V
<0.25V
BC
(*)
Emitter-collector breakdown
voltage (base open)
BV
-7
-8.8
<-1
V
I = -100uA
ECO
E
Collector-base cut-off current
I
-50
-20
-50
-65
nA
A
nA
mV
V
V
V
= -20V
CBO
CB
CB
EB
= -20V, T
= 100°C
amb
Emitter-base cut-off current
I
<-1
-50
= -5.6V
EBO
(*)
Collector-emitter saturation
voltage
V
CE(sat)
I = -1A, I = -100mA
C
B
(*)
(*)
-80 -110 mV
-135 -185 mV
-210 -260 mV
-950 -1050 mV
-840 -950 mV
I = -1A, I = -20mA
C
B
I = -2A, I = -40mA
C
B
(*)
(*)
I = -4.5A, I = -225mA
C
B
Base-emitter saturation voltage V
I = -4.5A, I = -225mA
BE(sat)
C
B
(*)
Base-emitter turn-on voltage
V
h
I = -4.5A, V = -2V
BE(on)
C
CE
(*)
Static forward current transfer
ratio
200
150
85
350
250
140
40
500
I = -10mA, V = -2V
FE
C
CE
(*)
I = -1A, V = -2V
C
CE
(*)
I = -4A, V = -2V
C
CE
(*)
I = -10A, V = -2V
C
CE
Transition frequency
Output capacitance
f
285
MHz I = -50mA, V = -10V
T
C
CE
f = 100MHz
(*)
C
32.4
40
pF
V
V
= -10V, f = 1MHz
= -15V.
obo
CB
CC
Delay time
Rise time
t
t
t
t
38.4
49.2
168
55
ns
ns
ns
ns
d
I = -750mA,
C
r
s
f
I
= I = -15mA.
B2
B1
Storage time
Fall time
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
Issue 1 - February 2007
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ZXTP25020CFF
Typical characteristics
Issue 1 - February 2007
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ZXTP25020CFF
Intentionally left blank
Issue 1 - February 2007
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ZXTP25020CFF
Package outline - SOT23F
c
D
e1
e
b
b
L1
L
E
E1
E2
b
A1
R
A
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Max.
Min.
0.80
0.00
0.35
0.10
2.80
Max.
1.00
Min.
Max.
Min.
2.30
1.50
1.10
0.48
0.30
0.05
0°
Max.
2.50
1.70
1.26
0.68
0.50
0.15
12°
Max.
0.0984
0.0669
0.0496
0.0268
0.0161
0.0059
12°
A
A1
b
0.0315
0.00
0.0394
0.0043
0.0161
0.0079
0.1181
E
E1
E2
L
0.0906
0.0590
0.0433
0.0189
0.0153
0.0019
0°
0.10
0.45
0.20
3.00
0.0153
0.0043
0.1102
c
D
L1
R
e
0.95 ref
0.0374 ref
e1
1.80
2.00
0.0709
0.0787
O
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 1 - February 2007
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ZXTP25020CFF
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
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tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
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For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
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Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
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Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
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the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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