MTB3D8N03RJ3
更新时间：2025-04-28 11:17:32
品牌：CYSTEKEC
描述：Parts Number : MTB3D8N03RJ3; Package : TO-252; Channel : Single N; BVDSS(V) : 30; ID(A) : 56; Vgs(±V) : 20; VGS(th) max(V) : 2.5; RDS(ON) @ 10V(mΩ) : 4.5(3.4); RDS(ON) @ 4.5V(mΩ) : 6.5(4.6); Ciss typ.(pF) : 1280; Crss typ.(pF) : 116; Qg typ (nC) : 23; Qgd typ.(nC) : 4.5;
概述
数据手册MTB3D8N03RJ3 概述
Parts Number : MTB3D8N03RJ3; Package : TO-252; Channel : Single N; BVDSS(V) : 30; ID(A) : 56; Vgs(±V) : 20; VGS(th) max(V) : 2.5; RDS(ON) @ 10V(mΩ) : 4.5(3.4); RDS(ON) @ 4.5V(mΩ) : 6.5(4.6); Ciss typ.(pF) : 1280; Crss typ.(pF) : 116; Qg typ (nC) : 23; Qgd typ.(nC) : 4.5;
MTB3D8N03RJ3 数据手册
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PDF下载Spec. No. : C693J3
Issued Date : 2021.11.29
Revised Date : 2023.11.06
Page No. : 1/9
CYStek Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB3D8N03RJ3
Features
BVDSS
30V
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
• Low On Resistance
• Low Gate Charge
• Fast Switching Characteristic
56A
17A
3.4mΩ
4.6mΩ
RDS(ON) typ. @VGS=10V, ID=20A
RDS(ON) typ. @VGS=4.5V, ID=20A
Equivalent Circuit
Outline
MTB3D8N03RJ3
TO-252
G D S
Ordering Information
Device
Package
Shipping
TO-252
MTB3D8N03RJ3-0-T3-G
2500 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB3D8N03RJ3
CYStek Product Specification
Spec. No. : C693J3
Issued Date : 2021.11.29
Revised Date : 2023.11.06
Page No. : 2/9
CYStek Electronics Corp.
Absolute Maximum Ratings (TA=25C)
Parameter
Symbol
VDS
Limits
30
Unit
Drain-Source Voltage
V
±20
66
Gate-Source Voltage
VGS
Continuous Drain Current @ VGS=10V, TC=25C (silicon limit)
Continuous Drain Current @ VGS=10V, TC=25C (package limit)
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
*a
*a
*a
*b
*b
*c
*a
*a
56
ID
42
17
14
A
IDM
IS
224
40
Continuous Body Diode Forward Current @ TC=25C
Pulsed Body Diode Forward Current @ TC=25C
Avalanche Current @ L=0.1mH
ISM
IAS
EAS
160
18
Avalanche Energy @ L=0.5mH
25
mJ
W
48
TC=25C
*a
*a
*b
*b
19
TC=100C
Total Power Dissipation
TA=25C
PD
3.1
2
TA=70C
Operating Junction and Storage Temperature Range
TJ, Tstg
-55~+150
C
Thermal Data
Parameter
Symbol Steady State Unit
RθJC
RθJA
2.6
40
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
C/W
*b
Note:
*a. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
*b. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C. The
value in any given application depends on the user’s specific board design.
*c. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and
low duty cycles to keep initial TJ=25°C.
MTB3D8N03RJ3
CYStek Product Specification
Spec. No. : C693J3
Issued Date : 2021.11.29
Revised Date : 2023.11.06
Page No. : 3/9
CYStek Electronics Corp.
Electrical Characteristics (TA=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
30
1
-
-
-
-
2.5
-
VGS=0V, ID=250μA
V
VDS=VGS, ID=250μA
VDS=5V, ID=10A
24
-
S
±
±
100
1
VGS= 20V, VDS=0V
IGSS
-
nA
μA
IDSS
-
-
VDS=24V, VGS=0V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
-
3.4
4.6
4.5
6.5
Ω
m
RDS(ON)
-
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
-
-
1280
860
116
1
-
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
Rg
pF
VDS=15V, VGS=0V, f=1MHz
Ω
f=1MHz
Qg
12
*1, 2
VDS=15V, ID=20A, VGS=4.5V
Qg
23
*1, 2
*1, 2
*1, 2
*1, 2
*1, 2
nC
Qgs
Qgd
td(ON)
tr
4
VDS=15V, ID=20A, VGS=10V
4.5
12
14
ns
VDS=15V, ID=20A, VGS=10V, RGS=6Ω
td(OFF) *1, 2
tf
39
*1, 2
10
Source-Drain Diode
VSD
trr
-
-
-
0.85
28
1.2
V
IS=20A, VGS=0V
*1
-
-
ns
nC
IF=20A, dIF/dt=100A/μs
Qrr
14
Note:
*1. Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2. Independent of operating temperature
MTB3D8N03RJ3
CYStek Product Specification
Spec. No. : C693J3
Issued Date : 2021.11.29
Revised Date : 2023.11.06
Page No. : 4/9
CYStek Electronics Corp.
Typical Characteristics
Breakdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.2
1.1
1
200
10V,9V,8V,7V,6V,5V
160
120
80
4.5V
4V
0.9
0.8
40
ID=250μA
VGS=0V
VGS=3V
0
0
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150 175
TJ, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Body Diode Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
1
6
5.5
5
4.5
4
0.8
0.6
0.4
0.2
VGS=4.5V
VGS=10V
TJ=25°C
TJ=150°C
3.5
3
2.5
2
0
5
10
15
20
0
5
10
15
20
IS, Body Diode Current (A)
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Temperature
20
15
10
5
3
2.5
2
VGS=10V, ID=20A
RDS(ON)@TJ=25°C : 3.4 mΩ typ.
ID=20A
1.5
1
0.5
0
0
0
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150 175
VGS, Gate-Source Voltage(V)
TJ, Junction Temperature(°C)
MTB3D8N03RJ3
CYStek Product Specification
Spec. No. : C693J3
Issued Date : 2021.11.29
Revised Date : 2023.11.06
Page No. : 5/9
CYStek Electronics Corp.
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Temperature
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
10000
1000
100
10
Ciss
Coss
Crss
ID=1mA
0.8
0.6
0.4
ID=250μA
1
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
TJ, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
8
100
10
VDS=5V
VDS=10V
6
1
4
VDS=15V
0.1
ID=20A
TA=25°C
2
Pulsed
0
0.01
0
5
10
15
20
25
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
100
20
16
12
8
100μs
RDSON
Limited
1ms
10
1
10ms
100ms
1s
10s
TA=25°C, TJ=150°C
DC
0.1
0.01
VGS=10V
VGS=10V, RθJA=40°C/W
4
RθJA=40°C/W
Single Pulse
0
0.01
0.1
1
10
100
25
50
75
100
125
150
175
VDS, Drain-Source Voltage(V)
TJ Junction Temperature(°C)
MTB3D8N03RJ3
CYStek Product Specification
Spec. No. : C693J3
Issued Date : 2021.11.29
Revised Date : 2023.11.06
Page No. : 6/9
CYStek Electronics Corp.
Typical Characteristics (Cont.)
Single Pulse Power Rating, Junction to Ambient
Maximum Drain Current vs Case Temperature
2400
2000
1600
1200
800
400
0
70
60
50
40
30
20
10
0
Silicon limit
TJ(MAX)=150°C
TA=25°C
RθJA=40°C/W
Package limit
VGS=10V, RθJC=2.6°C/W
0.0001
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
Pulse Width(s)
TC, Case Temperature(°C)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Recommended soldering footprint
MTB3D8N03RJ3
CYStek Product Specification
Spec. No. : C693J3
Issued Date : 2021.11.29
Revised Date : 2023.11.06
Page No. : 7/9
CYStek Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTB3D8N03RJ3
CYStek Product Specification
Spec. No. : C693J3
Issued Date : 2021.11.29
Revised Date : 2023.11.06
Page No. : 8/9
CYStek Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
5 +1/-1 seconds
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
6C/second max.
6 minutes max.
20-40 seconds
6C/second max.
8 minutes max.
Ramp down rate
Time 25 C to peak
temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB3D8N03RJ3
CYStek Product Specification
Spec. No. : C693J3
Issued Date : 2021.11.29
Revised Date : 2023.11.06
Page No. : 9/9
CYStek Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Code
B3D8
N03R
□□□□
Date
Code
2
3
1
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2nd code : month code, Jan→A, Feb→B, Mar→C,
Apr→D, May→E, Jun→F, Jul→G, Aug→H,
Sep→J, Oct→K, Nov→L, Dec→M
3rd and 4th codes : production serial number, 01~99
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Millimeters
Inches
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
Min.
0.382
Max.
Min.
9.712
Max.
A
A1
b
c
D
D1
D2
E
0.087
0.000
0.025
0.018
0.256
0.201
0.094
0.005
0.030
0.023
0.264
0.215
2.200
0.000
0.635
0.460
6.500
5.100
2.400
0.127
0.770
0.580
6.700
5.460
L
L1
L2
L3
L4
Φ
θ
0.406
10.312
0.114 REF
2.900 REF
1.400 1.700
1.600 REF
0.055
0.063
0.024
0.043
0°
0.067
REF
0.039
0.051
8°
0.600
1.100
0°
1.000
1.300
8°
0.190 REF
4.830 REF
0.236
0.086
0.244
0.094
6.000
2.186
6.200
2.386
h
V
0.000
0.012
0.000
0.300
e
0.207 REF
5.250 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB3D8N03RJ3
CYStek Product Specification
MTB3D8N03RJ3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| MTB3D8N03RQ8 | CYSTEKEC | Parts Number : MTB3D8N03RQ8; Package : SOP-8; Channel : Single N; BVDSS(V) : 30; ID(A) : 26; Vgs(±V) : 20; VGS(th) max(V) : 2.5; RDS(ON) @ 10V(mΩ) : 4.2(3.2); RDS(ON) @ 4.5V(mΩ) : 6.7(4.8); Ciss typ.(pF) : 1280; Crss typ.(pF) : 116; Qg typ (nC) : 23; Qgd typ.(nC) : 4.5; | 获取价格 |
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| MTB3K0B06KS6R | CYSTEKEC | Parts Number : MTB3K0B06KS6R; Package : SOT-363; Channel : Dual P; BVDSS(V) : -60; ID(A) : -0.24; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1; | 获取价格 |
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| MTB3K0P06KS3 | CYSTEKEC | Parts Number : MTB3K0P06KS3; Package : SOT-323; Channel : Single P; BVDSS(V) : -60; ID(A) : -0.24; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1; | 获取价格 |
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| MTB3K0P06KSN3 | CYSTEKEC | Parts Number : MTB3K0P06KSN3; Package : SOT-23; Channel : Single P; BVDSS(V) : -60; ID(A) : -0.3; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1; | 获取价格 |
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