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FMOSAB59N04-Q1

更新时间：2025-04-24 11:17:29

品牌：FORMOSA

描述：Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 59; PD(W) : 37; EAS(mJ) : 96;

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FMOSAB59N04-Q1 概述

Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 59; PD(W) : 37; EAS(mJ) : 96;

FMOSAB59N04-Q1 数据手册

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N-Channel SMD Power MOSFET

Formosa MS

FMOSAB59N04-Q1

List

List...................................................................................................1

Package outline.................................................................................2

Features...........................................................................................2

Application....................................................................................2

Mechanical data................................................................................2

Maximum ratings ..............................................................................2

Electrical characteristics....................................................................3

Rating and characteristic curves.....................................................4~6

Pinning information............................................................................6

Marking............................................................................................6

Suggested solder pad layout...............................................................6

Packing information...........................................................................7

Reel packing.....................................................................................8

Suggested thermal profiles for soldering processes..............................8

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2023/06/06

Revised Date

Revision

Page

Page 1

DS-2311P04-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB59N04-Q1

59A 40V N-Channel Enhancement

Mode Power MOSFET

Package outline

Features

• V_DS=40V, I_D=59A.

DFN3333-8

(T3333P8)

• R_DS(ON)≤ 6.0mΩ @V_GS=10V, I_D=20A.

• Ultra-low on-resistance.

0.124(3.15)

0.116(2.95)

0.010(0.25)

0.004(0.10)

• Low gate charge.

0.031(0.80)

0.028(0.70)

• 100% UIS and R_gtested.

• Qualified to AEC-Q101 standards for high reliability.

• Lead-free parts meet RoHS requirements.

• Suffix "-H" dinicates Halogen-free part, ex.FMOSAB59N04-Q1-H.

0.128(3.25)

0.118(3.00)

Mechanical data

• Epoxy:UL94-V0 rated flame retardant.

• Case : Molded plastic, DFN3333-8 (T3333P8).

• Mounting Position : Any.

0.026(0.65)BSC

0.014(0.35)

0.010(0.25)

0.020(0.50)

0.010(0.25)

0.102(2.59)

0.094(2.39)

0.020(0.50)

0.012(0.30)

Dimensions in inches and (millimeters)

Maximum ratings ^{(At T}_J⁼²⁵^o^{C unless otherwise noted)}

Parameter

Symbol

V_DS

Ratings

Unit

Drain-source voltage

Gate-source voltage

±20

V_GS

T_C=25ºC

Continuous drain current ^{(Note 1)}

I_D

T_C=100ºC

Pulsed drain current ^{(Note 2)}

Avalanche energy ^{(Note 3)}

I_DM

235

E_AS

T_C=25ºC

Power dissipation ^{(Note 4)}

P_D

T_C=100ºC

18.3

Thermal resistance, junction to ambient

Thermal resistance Junction to case

Operating Junction temperature

Storage temperature range

R_θJA

R_θJC

T_J

ºC/W

ºC

5.0

+175

-55 to +175

T_STG

ºC

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2023/06/06

Revised Date

Revision

Page

Page 2

DS-2311P04-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB59N04-Q1

Electrical characteristics ^{(At T}_J⁼²⁵^o^{C unless otherwise noted)}

Parameter

Conditions

Symbol Min.

Typ.

Max. Unit

Static parameters

Drain-source breakdown voltage

I_D=250μA, V_GS=0V

BV_DSS

V_DS=32V, V_GS=0V

Drain-source leakage current

I_DSS

µA

V_DS=32V, V_GS=0V, T_J=55ºC

V_GS=±20V, V_DS=0V

V_GS=V_DS, I_D=250µA

V_GS=10V, I_D=20A

Gate-source leakage current

Gate threshold voltage

I_GSS

V_GS(TH)

R_DS(ON)

g_FS

±100

3.4

2.2

2.8

4.8

Static drain-source on-resistance

Forward transconductance

mΩ

V_DS=5V, I_D=20A

Dynamic parameters^{(Note 5)}

Gate resistance

V_GS=0V, V_DS=0V, f=1.0MHz

V_GS=0V, V_DS=20V, f=1.0MHz

R_g

2.5

1032

630

Input capacitance

C_iss

C_oss

C_rss

Out capacitance

Reverse transfer capacitance

Switching parameters ^{(Note 5)}

V_GS=10V, V_DS=20V, I_D=20A

V_GS= 6V, V_DS=20V, I_D=20A

15.4

9.4

Total gate charge

Q_g

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

Q_gs

Q_gd

t_d(on)

t_r

5.4

V_GS= 0 to 10V, V_DS=20V, I_D=20A

2.7

8.3

16.3

15.4

4.4

V_DS=20V, V_GS=10V, R_L=1Ω, R_GEN=6Ω

Turn-off delay time

Fall time

t_d(off)

t_f

Source-drain diode ratings and characteristics

Maximum body diode continuous current

Drain-source diode forward voltage

T_C=25ºC

I_S

I_S=1A, V_GS=0V

V_SD

0.68

1.0

Body diode reverse recovery time

I_F=20A, dI_F/dt=100A/μs

t_rr

Body diode reverse recovery charge

Q_rr

Note :

1. Computed continuous current assumes the condition of T_{J_Max}while the actual continuous current depends on the thermal & electro-mechanical application board design.

2. This single-pulse measurement was taken under T_{J_Max}=175ºC.

3. E_ASof 96 mJ is based on starting T_J=25ºC, L=3.0mH, I_AS=8A, V_GS=10V, V_DD=20V; 100% test at L=0.1mH, I_AS=27A.

4. The power dissipation P_Dis based on T_{J_Max}=175ºC.

5. This value is guaranteed by design hence it is not included in the production test.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2023/06/06

Revised Date

Revision

Page

Page 3

DS-2311P04-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB59N04-Q1

Rating and characteristic curves

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2023/06/06

Revised Date

Revision

Page

Page 4

DS-2311P04-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB59N04-Q1

Rating and characteristic curves

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2023/06/06

Revised Date

Revision

Page

Page 5

DS-2311P04-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB59N04-Q1

Rating and characteristic curves

Pinning information

Simplified outline

Symbol

Drain

Pin 1,2,3

Pin 4

Source

Gate

Pin 5,6,7,8 Drain

Source

Marking

Type number

Marking Code

AB59N04

FMOSAB59N04-Q1

Suggested solder pad layout

2.490

0.40

Note:

1.Controlling dimension:in millimeters.

2.General tolerance:±0.05mm.

0.65

3.The pad layout is for reference purposes only.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2023/06/06

Revised Date

Revision

Page

Page 6

DS-2311P04-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB59N04-Q1

Packing information

•

D²

D¹

W¹

unit:mm

DFN3333-8

(T3333P8)

Symbol

Item

Tolerance

Carrier width

Carrier length

Carrier depth

Sprocket hole

0.1

2.0

min

2.0

min

0.5

0.1

0.3

1.0

3.55

1.10

1.50

330.00

100.00

13" Reel outside diameter

13" Reel inner diameter

7" Reel outside diameter

7" Reel inner diameter

Feed hole diameter

Sprocket hole position

Punch hole position

Punch hole pitch

D¹

D²

13.00

1.75

5.50

8.00

4.00

2.00

0.23

12.00

17.60

Sprocket hole pitch

Embossment center

Overall tape thickness

Tape width

P⁰

P¹

W¹

Reel width

Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2023/06/06

Revised Date

Revision

Page

Page 7

DS-2311P04-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB59N04-Q1

Reel packing

COMPONENT

SPACING

INNER

BOX

(m/m)

REEL

DIA,

(m/m)

CARTON

SIZE

(m/m)

REEL

(pcs)

BOX

(pcs)

PACKAGE

T3333P8

CARTON

(pcs)

REEL SIZE

13"

(m/m)

5,000

8.0

10,000

355*335*38

330

350*330*360

80,000

Suggested thermal profiles for soldering processes

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2023/06/06

Revised Date

Revision

Page

Page 8

DS-2311P04-AEC

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