首页 > FMOSAB64N03-H

FMOSAB64N03-H

更新时间：2025-04-28 11:17:32

品牌：FORMOSA

描述：Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 30; ID(A) : 64; PD(W) : 31; EAS(mJ) : 39;

PDF下载

中文翻译

免费 PCB/SMT

概述
数据手册

如果您发现信息不准确，欢迎纠错

FMOSAB64N03-H 概述

Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 30; ID(A) : 64; PD(W) : 31; EAS(mJ) : 39;

FMOSAB64N03-H 数据手册

通过下载FMOSAB64N03-H数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB64N03

List

List...................................................................................................1

Package outline.................................................................................2

Features............................................................................................2

Mechanical data.................................................................................2

Maximum ratings ...............................................................................2

Electrical characteristics.....................................................................3

Rating and characteristic curves......................................................4~5

Pinning information............................................................................6

Marking.............................................................................................6

Suggested solder pad layout...............................................................6

Packing information............................................................................7

Reel packing......................................................................................8

Suggested thermal profiles for soldering processes...............................8

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2311L55

Issued Date

2022/09/14

Revised Date

Revision

Page

Page 1

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB64N03

64A, 30V, N-Channel MOSFET

Package outline

Features

• V_DS=30V, I_D=64A

T3333P8

• R_DS(ON)≤ 4.8mΩ @V_GS=10V, I_D=20A.

• R_DS(ON)≤ 6.9mΩ @V_GS=4.5V, I_D=18A.

• Low R_DS(ON)to minimize conduction losses.

• Reliable and rugged.

0.031(0.80)

0.028(0.70)

10^o~14^o

• 100% UIS and R_gtested.

0.006(0.15) Max.

• Lead-free parts meet RoHS requirements.

• Suffix "-H" dinicates Halogen-free part, ex.FMOSAB64N03-H.

Application

0.010(0.25)

0.004(0.10)

0.104(2.65)

0.090(2.29)

0.026(0.65)BSC

• Portable equipment and battery powered systems.

• Power management in notebook computer.

0.026(0.65)

0.011(0.28)

0.076(1.94)

0.060(1.54)

Mechanical data

0.134(3.40)

0.126(3.20)

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, T3333P8

• Mounting Position : Any

0.012(0.30)

0.004(0.10)

0.030(0.77)

0.015(0.37)

0.002(0.05)

0.000(0.00)

0.035(0.89)

0.023(0.59)

• Weight : Approximated 0.02 gram

0.020(0.50)

0.012(0.30)

0.016(0.40)

0.008(0.20)

Dimensions in inches and (millimeters)

Maximum ratings ^{(At T}_j⁼²⁵^o^{C unless otherwise noted)}

Parameter

Drain-source voltage

Symbol

V_DS

Ratings

Unit

Gate-source voltage

V_GS

±20

Continuous drain current

(T_C=25℃) (Note 1)

(T_C=100℃)

I_D

Pulsed drain current (Note 1)

Avalanche current, single pulse

Avalanche energy, single pulse

I_DM

I_AS

(L=0.1mH) (Note 2)

E_AS

12.5

Power dissipation

(T_C=25℃)

P_D

(T_C=100℃)

Operating Junction temperature range

Storage temperature range

T_J

+150

-55 to +150

℃

T_STG

R_θJC

R_θJA

℃

Thermal resistance Junction to case

(Steady state)

(Note 3) (Steady state)

℃/W

Thermal resistance, junction to ambient

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2311L55

Issued Date

2022/09/14

Revised Date

Revision

Page

Page 2

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB64N03

Electrical characteristics ^{(At T}_j⁼²⁵^o^{C unless otherwise noted)}

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

Off characteristics

Drain-source breakdown voltage

Drain-source leakage current

Gate-source leakage current

BV_DSS

I_DSS

I_D=250μA, V_GS=0V

V_DS=24V, V_GS=0V

V_GS=±20V, V_DS=0V

1.0

µA

I_GSS

±100

On characteristics

Gate threshold voltage

V_GS(TH)

R_DS(ON)

g_FS

V_GS=V_DS, I_D=250µA

V_GS=10V, I_D=20A

V_GS=4.5V, I_D=18A

V_DS=5V, I_D=20A

1.1

1.6

4.1

5.3

2.1

4.8

6.9

mΩ

Static drain-source on-resistance

Forward transconductance

(Note 4)

Dynamic parameters (Note 5)

Input capacitance

C_iss

C_oss

C_rss

R_g

1859

260

212

2.2

Out capacitance

V_GS=0V, V_DS=15V, f=1.0MHz

V_GS=0V, V_DS=0V, f=1MHz

Reverse transfer capacitance

Gate resistance

Switching parameters (Note 5)

Total gate charge

Q_g

Q_gs

Q_gd

t_d(on)

t_r

3.4

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

V_GS=10V, V_DS=25V, I_D=14A

9.6

23.4

62.8

V_DS=15V, V_GS=10V, I_D=1Α, R_G=6Ω

Turn-off delay time

Fall time

t_d(off)

t_f

Source-drain diode ratings and characteristics

Drain-source diode forward voltage (Note 4)

Reverse recovery time

V_SD

t_rr

I_SD=1A, V_GS=0V

0.75

18.2

9.2

1.1

I_F=2A, V_GS=0V, di/dt=100A/µs

Reverse recovery charge

Q_rr

Note : 1. Max. current is limited by bonding wire.

2. UIS tested and pulse width are limited by maximum junction temperature 150℃.

3. Surface mounted on 1in²FR-4 board with 1oz.

4. Pulse test ( pulse width ≤ 300μs, duty cycle ≤ 2%).

5. Guaranteed by design, not subject to production testing.

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2311L55

Issued Date

2022/09/14

Revised Date

Revision

Page

Page 3

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB64N03

Rating and characteristic curves

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2311L55

Issued Date

2022/09/14

Revised Date

Revision

Page

Page 4

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB64N03

Rating and characteristic curves

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2311L55

Issued Date

2022/09/14

Revised Date

Revision

Page

Page 5

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB64N03

Pinning information

Simplified outline

Symbol

Pin1 Source

Pin2 Source

Pin3 Source

Pin4 Gate

Pin5 Drain

Pin6 Drain

Pin7 Drain

Pin8 Drain

(Pin：5,6,7,8)

Drain

(Pin：4)

Gate

Source

(Pin：1,2,3)

Marking

Type number

Marking Code

30048

FMOSAB64N03

ΣΣΣΣΣΣ

ΣΣΣΣΣΣ : Date code

Suggested solder pad layout

2.80

0.40

0.65

Note:

1.Controlling dimension:in millimeters.

2.General tolerance:±0.05mm.

3.The pad layout is for reference purposes only.

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2311L55

Issued Date

2022/09/14

Revised Date

Revision

Page

Page 6

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB64N03

Packing information

•

D²

D¹

W¹

unit:mm

Symbol

T3333P8

Item

Tolerance

Carrier width

Carrier length

Carrier depth

Sprocket hole

0.1

2.0

min

2.0

min

0.5

0.1

0.3

1.0

3.55

1.10

1.50

330.00

100.00

13" Reel outside diameter

13" Reel inner diameter

7" Reel outside diameter

7" Reel inner diameter

Feed hole diameter

Sprocket hole position

Punch hole position

Punch hole pitch

D¹

D²

13.00

1.75

5.50

8.00

4.00

2.00

0.23

12.00

17.60

Sprocket hole pitch

Embossment center

Overall tape thickness

Tape width

P⁰

P¹

W¹

Reel width

Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2311L55

Issued Date

2022/09/14

Revised Date

Revision

Page

Page 7

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB64N03

Reel packing

REEL

(PCS)

INNER BOX

(PCS)

PER CARTON

PACKAGE

T3333P8

OUTLINE

TAPING

TAPE & REEL

13 inch

(PCS)

5,000

10,000

60,000

Suggested thermal profiles for soldering processes

1.Storage environment : Temperature=5℃~40℃ Humidity=55%±25%

2.Reflow soldering of surface-mount devices

Critical Zone

T_Lto T_P

T_P

Ramp-up

T_L

T_smax

T_smin

t_S

Preheat

Ramp-down

t25℃ to Peak

3.Reflow soldering

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2311L55

Issued Date

2022/09/14

Revised Date

Revision

Page

Page 8

FMOSAB64N03-H 相关器件

型号	制造商	描述	价格	文档
FMOSAB68N08-H	FORMOSA	Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 80; ID(A) : 68; PD(W) : 35.7; EAS(mJ) : 5	获取价格
FMOSAB99N04-H	FORMOSA	Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 99; PD(W) : 52; EAS(mJ) : 79;	获取价格
FMOSAC09P8N20-H	FORMOSA	Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 200; ID(A) : 9.8; PD(W) : 50; EAS(mJ) : 4	获取价格
FMOSAC102N10-H	FORMOSA	Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 100; ID(A) : 102; PD(W) : 130; EAS(mJ) :	获取价格
FMOSAC103N06-Q1	FORMOSA	Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 60; ID(A) : 103; PD(W) : 94; EAS(mJ) : 94	获取价格
FMOSAC110N10-Q1	FORMOSA	Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 100; ID(A) : 110; IDSS@VDSS(V) : 80; IDSS	获取价格
FMOSAC112N06-Q1	FORMOSA	Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 60; ID(A) : 112; EAS(mJ) : 94; IDSS@VDSS(	获取价格
FMOSAC115N03-H	FORMOSA	Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 30; ID(A) : 115; PD(W) : 50; EAS(mJ) : 14	获取价格
FMOSAC132N12-H	FORMOSA	Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 120; ID(A) : 132; PD(W) : 125; EAS(mJ) :	获取价格
FMOSAC135N10-H	FORMOSA	Status : Active; Package : T5060P8; ESD : No; BVDSS(V) : 100; ID(A) : 135; PD(W) : 114; EAS(mJ) :	获取价格