1N5802USE3
更新时间:2024-11-30 19:16:05
品牌:MICROSEMI
描述:Rectifier Diode, Avalanche, 1 Element, 1A, 50V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2
1N5802USE3 概述
Rectifier Diode, Avalanche, 1 Element, 1A, 50V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2 整流二极管
1N5802USE3 规格参数
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.2 |
其他特性: | HIGH RELIABILITY | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 0.875 V |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e3 |
最大非重复峰值正向电流: | 35 A | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 最大输出电流: | 1 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | 260 |
最大重复峰值反向电压: | 50 V | 最大反向恢复时间: | 0.025 µs |
子类别: | Rectifier Diodes | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | MATTE TIN OVER NICKEL |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
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