CR04AM-12A-ATB#BD0

更新时间:2024-12-04 10:57:47
品牌:RENESAS
描述:600V - 0.4A - Thyristor Low Power Use

CR04AM-12A-ATB#BD0 概述

600V - 0.4A - Thyristor Low Power Use

CR04AM-12A-ATB#BD0 数据手册

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Preliminary Datasheet  
CR04AM-12A  
R07DS0636EJ0100  
Rev.1.00  
Thyristor  
Low Power Use  
Jan 16, 2012  
Features  
IT (AV) : 0.4 A  
DRM : 600 V  
IGT: 100 A  
V
Planar Type  
Outline  
RENESAS Package code: PRSS0003EA-A  
PRSS0003DE-A  
(Package name: TO-92*) (Package name: TO-92(3))  
2
1
1. Cathode  
2. Anode  
3. Gate  
3
3
3
2
2
1
1
Applications  
Solid state relay, igniter, strobe flasher, circuit breaker, and general purpose control applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
Repetitive peak off-state voltage Note1  
DC off-state voltage Note1  
VRRM  
VRSM  
VR(DC)  
VDRM  
VD(DC)  
600  
720  
480  
600  
480  
V
V
V
V
V
Notes: 1. With gate to cathode resistance RGK=1 k  
R07DS0636EJ0100 Rev.1.00  
Jan 16, 2012  
Page 1 of 8  
CR04AM-12A  
Preliminary  
Parameter  
Symbol  
IT(RMS)  
IT(AV)  
Ratings  
0.63  
Unit  
A
Conditions  
RMS on-state current  
Average on-state current  
0.4  
A
Commercial frequency, sine half wave  
180conduction, Ta=54C  
Surge on-state current  
I2t for fusing  
ITSM  
I2t  
10  
A
60Hz sine half wave, 1full cycle,  
peak value, non-repetitive  
0.4  
A2s  
Value corresponding to 1cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
Storage temperature  
PGM  
PG(AV)  
VFGM  
VRGM  
IFGM  
Tj  
0.5  
W
W
V
0.1  
6
6
V
0.3  
A
– 40 to +125  
– 40 to +125  
0.23  
C  
C  
g
Tstg  
Mass  
Typical value  
Electrical Characteristics  
Parameter  
Symbol  
IRRM  
IDRM  
Min.  
Typ.  
Max.  
0.5  
Unit  
mA  
mA  
Test conditions  
Tj = 125C, VRRM applied  
Tj = 125C, VDRM applied  
RGK=1 k  
Repetitive peak reverse current  
Repetitive peak off-state current  
0.5  
On-state voltage  
VTM  
VGT  
VGD  
IGT  
1.2  
0.8  
V
V
Tj = 25C, ITM = 1.2 A  
instantaneous value  
Tj = 25C, VD = 6 V,  
IT = 0.1 A Note3  
Gate trigger voltage  
Gate non-trigger voltage  
Gate trigger current  
0.2  
V
Tj = 125C, VD = 1/2 VDRM  
RGK=1 K  
1Note2  
100Note2  
μA  
Tj = 25C, VD = 6 V,  
IT = 0.1 A Note3  
Holding current  
IH  
1.5  
3
mA  
Tj = 25°C, VD = 12 V, RGK=1 k  
Junction to ambient  
Thermal resistance  
Rth(j-a)  
150  
C/W  
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.  
Item  
A
B
C
D
E
IGT (A)  
1 to 30  
20 to 50  
40 to 100  
1 to 50  
20 to 100  
The above values do not include the current flowing through the 1 kresistance between the gate and  
cathode.  
3. IGT, VGT measurement circuit.  
60Ω  
A1  
I
I
GS  
GT  
TUT  
A3  
A2  
6V  
DC  
3V  
DC  
V1  
R
GK  
1
2
V
1kΩ  
GT  
Switch  
Switch 1 : I  
Switch 2 : V  
GT  
measurement  
measurement  
(Inner resistance of voltage meter is about 1kΩ)  
GT  
R07DS0636EJ0100 Rev.1.00  
Jan 16, 2012  
Page 2 of 8  
CR04AM-12A  
Preliminary  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
102  
101  
10  
8
Ta = 25°C  
6
4
100  
2
101  
0
5
100  
101  
102  
0
1
2
3
4
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics  
103  
102  
101  
100  
102  
101  
Typical Example  
V
= 6V  
P
= 0.5W  
GM  
FGM  
V
= 0.8V  
GT  
(Tj = 25°C)  
P
= 0.1W  
G(AV)  
100  
I
= 100μA  
GT  
(Tj = 25°C)  
101  
I
= 0.3V  
102  
FGM  
V
= 0.2V  
GD  
102  
102  
101  
100  
101  
0
40  
80  
120  
–40  
160  
Junction Temperature (°C)  
Gate Current (mA)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to ambient)  
100  
101  
102  
103  
103  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Distribution  
Typical Example  
102  
101  
100  
–40 –20  
0
20 40 60 80 100 120  
103  
102  
101  
100  
Junction Temperature (°C)  
Time (s)  
R07DS0636EJ0100 Rev.1.00  
Jan 16, 2012  
Page 3 of 8  
CR04AM-12A  
Preliminary  
Allowable Ambient Temperature vs.  
Average On-State Current  
(Single-Phase Half Wave)  
Maximum Average Power Dissipation  
(Single-Phase Half Wave)  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
160  
140  
120  
100  
80  
60° 120°  
θ = 30°  
90°  
θ
180°  
360°  
Resistive,  
inductive loads  
Natural convection  
60  
θ = 30° 90°  
60° 120°  
180°  
θ
40  
360°  
20  
Resistive,  
inductive loads  
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Average On-State Current (A)  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Average On-State Current (A)  
Allowable Ambient Temperature vs.  
Average On-State Current  
Maximum Average Power Dissipation  
(Single-Phase Full Wave)  
(Single-Phase Full Wave)  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
160  
140  
120  
100  
80  
90°  
60° 120°  
180°  
θ = 30°  
θ
θ
360°  
Resistive loads  
Natural convection  
60  
40  
θ
θ
360°  
20  
θ = 30° 60° 90° 120° 180°  
Resistive loads  
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Ambient Temperature vs.  
Average On-State Current  
(Rectangular Wave)  
Maximum Average Power Dissipation  
(Rectangular Wave)  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
160  
140  
120  
100  
80  
90° 180°  
60° 120°270°  
θ = 30°  
θ
DC  
360°  
Resistive,  
inductive loads  
Natural convection  
60  
θ
40  
360°  
60° 120°  
90° 180°  
270°  
20  
Resistive,  
inductive loads  
θ = 30°  
DC  
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Average On-State Current (A)  
Average On-State Current (A)  
R07DS0636EJ0100 Rev.1.00  
Jan 16, 2012  
Page 4 of 8  
CR04AM-12A  
Preliminary  
Breakover Voltage vs.  
Gate to Cathode Resistance  
Breakover Voltage vs.  
Junction Temperature  
160  
120  
100  
80  
60  
40  
20  
0
Typical Example  
Typical Example  
140  
120  
100  
80  
60  
40  
20  
R
= 1kΩ  
GK  
Tj = 125°C  
0
–40  
0
40  
80  
120  
160  
101  
100  
101  
102  
Gate to Cathode Resistance (kΩ)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Holding Current vs.  
Rate of Rise of Off-State Voltage  
Junction Temperature  
160  
140  
120  
100  
80  
101  
100  
Distribution  
Typical Example  
Tj = 125°C  
= 1kΩ  
Typical Example  
R
GK  
I (25°C) = 35μA  
GT  
60  
101  
40  
20  
R
= 1kΩ  
GK  
102  
0
100  
101  
102  
103  
–40 20  
0
20 40 60 80 100 120 140  
Rate of Rise of Off-State Voltage (V/μs)  
Junction Temperature (°C)  
Turn-On Time vs.  
Gate Current  
Holding Current vs.  
Gate to Cathode Resistance  
600  
102  
101  
Typical Example  
V = 100V  
D
Typical Example  
R = 47Ω  
L
500  
400  
300  
200  
100  
0
R
= 1kΩ  
GK  
Ta = 25°C  
100  
Tj = 125°C  
100  
101  
101  
101  
102  
101  
100  
101  
102  
Gate Current (mA)  
Gate to Cathode Resistance (kΩ)  
R07DS0636EJ0100 Rev.1.00  
Jan 16, 2012  
Page 5 of 8  
CR04AM-12A  
Preliminary  
Turn-Off Time vs.  
Junction Temperature  
Repetitive Peak Reverse Voltage vs.  
Junction Temperature  
40  
160  
140  
120  
100  
80  
V
= 50V, V = 50V  
R
D
I
T
= 2A, R  
= 1kΩ  
35  
30  
25  
20  
15  
10  
5
GK  
Typical Example  
Distribution  
60  
40  
20  
0
0
0
20 40 60 80 100 120 140 160  
Junction Temperature (°C)  
–40  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Gate Trigger Current vs.  
Gate Current Pulse Width  
104  
103  
102  
101  
Typical Example  
V
= 6V  
D
R = 60Ω  
L
Ta = 25°C  
100  
101  
102  
103  
Gate Current Pulse Width (μs)  
R07DS0636EJ0100 Rev.1.00  
Jan 16, 2012  
Page 6 of 8  
CR04AM-12A  
Preliminary  
Package dimensions  
Package Name  
JEITA Package Code  
SC-43A  
RENESAS Code  
PRSS0003EA-A  
Previous Code  
T920  
MASS[Typ.]  
0.23g  
Unit: mm  
TO-92*  
φ5.0Max  
4.4  
1.251.25  
Circumscribed circle φ0.7  
Package Name  
TO-92(3)  
JEITA Package Code  
SC-43A  
RENESAS Code  
PRSS0003DE-A  
Previous Code  
TO-92(3)/TO-92(3)V  
MASS[Typ.]  
0.23g  
Unit: mm  
4.8 ± 0.3  
3.8 ± 0.3  
0.60 Max  
0.55 Max  
0.42 Max  
1.27  
2.54  
R07DS0636EJ0100 Rev.1.00  
Jan 16, 2012  
Page 7 of 8  
CR04AM-12A  
Preliminary  
Ordering Information  
Orderable Part Number  
CR04AM-12A#B00  
Packing  
Quantity  
Remark  
Bag  
Bag  
Bag  
Bag  
500 pcs. Straight Type, TO-92*  
CR04AM-12A-B#B00  
CR04AM-12A-A6#B00  
CR04AM-12A-BA6#B00  
CR04AM-12A-TB#B00  
CR04AM-12A-BTB#B00  
CR04AM-12A#B10  
500 pcs. Straight Type, TO-92*, IGT item:B  
500 pcs. A6 Lead form, TO-92*  
500 pcs. A6 Lead form, TO-92*, IGT item:B  
2000 pcs. A8 Lead form, TO-92*  
Adhesive Tape  
Adhesive Tape  
Bag  
2000 pcs. A8 Lead form, TO-92*, IGT item:B  
500 pcs. Straight Type, TO-92(3)  
CR04AM-12A-B#B10  
Bag  
500 pcs. Straight Type, TO-92(3), IGT item:B  
Note : Please confirm the specification about the shipping in detail.  
R07DS0636EJ0100 Rev.1.00  
Jan 16, 2012  
Page 8 of 8  
Notice  
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas  
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to  
be disclosed by Renesas Electronics such as that disclosed through our website.  
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technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or  
others.  
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for  
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the  
use of these circuits, software, or information.  
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regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to  
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assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.  
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depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas  
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which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the  
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personal electronic equipment; and industrial robots.  
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically  
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range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the  
use of Renesas Electronics products beyond such specified ranges.  
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malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the  
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please evaluate the safety of the final products or system manufactured by you.  
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products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes  
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(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.  
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.  
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http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
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© 2012 Renesas Electronics Corporation. All rights reserved.  
Colophon 1.1  

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