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L6234PD013TR

更新时间：2025-07-06 10:24:56
品牌：STMICROELECTRONICS
描述：三相电机驱动器

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L6234PD013TR 概述

三相电机驱动器 电机驱动器 运动控制电子器件

L6234PD013TR 规格参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：SOIC包装说明：SOP, SOP20,.56
针数：20Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：12 weeks风险等级：0.79
模拟集成电路 - 其他类型：BRUSHLESS DC MOTOR CONTROLLERJESD-30 代码：R-PDSO-G20
JESD-609代码：e3长度：15.9 mm
湿度敏感等级：3功能数量：1
端子数量：20最高工作温度：125 °C
最低工作温度：-40 °C最大输出电流：5 A
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP20,.56封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：245
电源：42 V认证状态：Not Qualified
座面最大高度：3.6 mm子类别：Motion Control Electronics
最大供电电压 (Vsup)：52 V最小供电电压 (Vsup)：7 V
标称供电电压 (Vsup)：42 V表面贴装：YES
技术：BICMOS温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn) - annealed端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30宽度：11 mm
Base Number Matches：1

L6234PD013TR 数据手册

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L6234  
THREE PHASE MOTOR DRIVER  
SUPPLYVOLTAGEFROM 7 TO 52V  
5A PEAK CURRENT  
RDS ON 0.3Ω TYP. VALUE AT 25°C  
CROSS CONDUCTION PROTECTION  
TTL COMPATIBLE DRIVER  
OPERATING FREQUENCY TO 50KHz  
THERMAL SHUTDOWN  
POWER DIP (16+2+2)  
PowerSO20  
INTRINSIC FAST FREE WHEELING DIODES  
INPUT AND ENABLE FUNCTION FOR  
EVERY HALF BRIDGE  
10V EXTERNAL REFERENCE AVAILABLE  
DESCRIPTION  
The L6234 is a triple half bridge to drive a  
brushlessmotor.  
ORDERING NUMBERS: L6234 (POWER DIP 16+2+2)  
L6234PD (PowerSO20)  
It is realized in Multipower BCD technology which  
combines isolated DMOS power transistors with  
CMOS and Bipolar circuits on the same chip.  
By using mixed technology it has been possible to  
optimize the logic circuitry and the power stage to  
achievethe best possible performance.  
The output DMOS transistors can sustain a very  
high current due to the fact that the DMOS struc-  
ture is not affected by the second breakdown ef-  
fect, the RMS maximum current is practically lim-  
ited by the dissipation capability of the package.  
All the logic inputs are TTL, CMOS and P com-  
µ
patible. Each channel is controlled by two sepa-  
rate logic input.  
L6234 is available in 20 pin POWER DIP package  
(16+2+2) and in PowerSO20.  
PIN CONNECTION (Top view)  
GND  
SENSE1  
EN2  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
GND  
SENSE2  
VBOOT  
Vcp  
OUT1  
IN1  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
OUT2  
IN2  
EN1  
VS  
EN2  
IN2  
SENSE1  
GND  
OUT2  
OUT1  
IN1  
VREF  
OUT3  
IN3  
GND  
GND  
VS  
GND  
SENSE2  
VBOOT  
VCP  
EN1  
EN3  
EN3  
IN3  
VS  
VS  
GND  
GND  
OUT3  
VREF  
D94IN129A  
D98IN848  
POWER DIP (16+2+2)  
PowerSO20  
March 1998  
1/10  
L6234  
BLOCK DIAGRAM  
0.22µF  
10nF  
VCP  
1µF  
VREF  
VBOOT  
1N4148  
VREF  
10V  
=
CHARGE  
PUMP  
Vs  
to 52V  
7
0.1  
µF  
100µF  
IN1  
TH1  
TL1  
OUT1  
EN1  
IN2  
TH2  
TL2  
OUT2  
EN2  
SENSE1  
THERMAL  
PROTECTION  
IN3  
TH3  
TL3  
OUT3  
EN3  
SENSE2  
RSENSE  
GND  
D95IN309A  
2/10  
L6234  
THERMAL DATA  
Symbol  
Rth j-pin  
Parameter  
DIP16+2+2  
12  
PowerSO20  
–
Unit  
C/W  
°
Thermal Resistance, Junction to Pin  
Thermal Resistance, Junction to Ambient  
(see Thermal Characteristics)  
Rth j-amb1  
40  
–
C/W  
°
Thermal Resistance, Junction to Ambient (see Thermal  
Characteristics)  
Rth j-amb2  
Rth j-case  
50  
–
–
C/W  
°
1.5  
°C/W  
Thermal Resistance Junction-case  
ones), as well as the others, have a minimum  
thermal connection with the external world (very  
thin strips only) so that the dissipation takes place  
through still air and through the PCB itself.  
It is the same situation of point above, without any  
heatsinking surface created on purpose on the  
board.  
THERMAL CHARACTERISTICS  
Rth j-pins  
DIP16+2+2  
. The thermal resistance is referred to  
the thermal path from the dissipating region on  
the top surface of the silicon chip, to the points  
along the four central pins of the package, at a  
distance of 1.5 mm away from the stand-offs.  
Additional data on the PowerDip and the  
PowerSO20 package can be found in:  
Rth j-amb1  
If a dissipating surface, thick at least 35 µm, and  
with a surface similar or bigger than the one  
shown, is created making use of the printed cir-  
cuit.  
Such heatsinking surface is considered on the  
bottomside of an horizontal PCB (worst case).  
Application Note AN467:  
Thermal Characteristics of the PowerDip  
20,24 Packages Soldered on 1,2,3 oz.  
Copper PCB  
Application Note AN668:  
A New High Power IC Surface Mount Package:  
PowerSO20 Power IC Packaging from Insertion  
to Surface Mounting.  
Rth j-amb2  
If the power dissipating pins (the four central  
Figure 1: Printed Heatsink  
3/10  
L6234  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
VS  
VIN,VEN  
Ipeak  
VSENSE  
Vb  
Power Supply Voltage  
Input Enable Voltage  
52  
V
– 0.3 to 7  
V
A
Pulsed Output Current (note 1)  
Sensing Voltage (DC Voltage)  
Bootstrap Peak Voltage  
5
-1 to 4  
62  
V
V
VOD  
Differential Output Voltage (between any of the 3 OUT pins)  
Commutation Frequency  
60  
V
fC  
50  
KHz  
V
VREF  
Ptot  
Reference Voltage  
12  
Total Power Dissipation  
Total Power Dissipation  
L6234PD Tamb = 70°C  
L6234 Tamb = 70 C  
2.3  
W
W
Ptot  
1.6 (*)  
-40 to 150  
°
Tstg, Tj  
Storage and Junction Temperature Range  
C
°
Note 1: Pulse width limited only by junction temperature and the transient thermal impedance  
(*) Mounted on board with minimized copper area  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Value  
Unit  
VS  
Supply Voltage  
7 to 42  
V
VOD  
Peak to Peak Differential Voltage (between any of the 3 OUT  
pins)  
52  
V
Iout  
DC Output Current Power SO20 (Tamb = 25°C)  
DC Output Current Power DIP (Tamb = 25°C) with infinite heatsink  
Sensing Voltage (pulsed tw < 300nsec)  
Sensing Voltage (DC)  
4
2.8  
A
A
V
V
VSENSE  
-4 to 4  
-1 to 1  
-40 to 125  
Tj  
Junction Temperature Range  
C
°
PIN FUNCTIONS  
Powerdip  
PowerSO20  
Name  
Function  
1
20  
10  
6
5
15  
OUT 1  
OUT 2  
OUT 3  
Output of the channels 1/2/3.  
2
19  
9
7
4
14  
IN 1  
IN 2  
IN 3  
Logic input of channels 1/2/3. A logic HIGH level (when the corresponding  
EN pin is HIGH) switches ON the upper DMOS Power Transistor, while a  
logic LOW switches ON the corresponding low side DMOS Power.  
3
18  
8
8
3
13  
EN 1  
EN 2  
EN 3  
Enable of the channels 1/2/3. A logic LOW level on this pin switches off both  
power DMOS of the related channel.  
4,7  
14  
9, 12  
19  
Vs  
Power Supply Voltage.  
SENSE2 A resistance Rsense connected to this pin provides feedback for motor  
current control for the bridge 3.  
17  
11  
2
SENSE1 A resistance Rsense connected to this pin provides feedback for motor  
current control for the bridges 1 and 2.  
16  
Vref  
Internal Voltage Reference. A capacitor connected from this pin to GND  
increases the stability of the Power DMOS drive circuit.  
12  
13  
17  
18  
Vcp  
Bootstrap Oscillator. Oscillator output for the external charge pump.  
Overvoltage input to drive the upper DMOS  
VBOOT  
GND  
5,6  
15,16  
1,10  
11,20  
Common Ground Terminal. In Powerdip and SO packages these pins are  
used to dissipate the heat forward the PCB.  
4/10  
L6234  
ELECTRICAL CHARACTERISTICS (Vs = 42V ; Tj = 25°C unless otherwise specified)  
Symbol  
Parameter  
Supply Voltage  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
VS  
7
52  
V
Vref  
IS  
Reference Voltage  
10  
V
mA  
°C  
ns  
Quiescent Supply Current  
Thermal Shutdown  
6.5  
TS  
TD  
150  
Dead Time Protection  
300  
OUTPUT DMOS TRANSISTOR  
Symbol  
Parameter  
Leakage Current  
ON Resistance  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
IDSS  
1
mA  
RDS (ON)  
0.3  
Ω
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Condition  
ISD = 4A; EN = LOW  
IF = 4A  
Min.  
Typ.  
Max.  
Unit  
VSD  
1.2  
V
Forward ON Voltage  
TRR  
Tpr  
900  
200  
ns  
ns  
Reverse Recovery Time  
Forward Recovery Time  
LOGIC LEVELS  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
VINL, VENL  
-0.3  
0.8  
V
Input LOW Voltage  
V
INH, VENH  
INL, IENL  
INH, IENH  
2
7
V
Input HIGH Voltage  
Input LOW Current  
Input HIGH Current  
I
-10  
A
µ
VIN,VEN = L  
VIN,VEN = H  
I
30  
A
µ
CIRCUIT DESCRIPTION  
L6234 is a triple half bridge designed to drive  
brushlessDC motors.  
Each half bridge has 2 power DMOS transistors  
with RdsON = 0.3Ω. The 3 half bridges can be  
controlled independentlyby means of the 3 inputs  
IN1, IN2, IN3 and the 3 inputs EN1, EN2, and  
EN3. An external connection to the 3 common  
low side DMOS sources is provided to connect a  
sensing resistor for constant current chopping ap-  
plication.  
The driving stage and the logic stage are de-  
signed to work from 7V to 52V.  
5/10  
L6234  
Figure 1. QuiescentCurrent vs. Supply Volt-  
Figure 2. Normalized Quiescent Current vs.  
switching frequency.  
age.  
Iq [mA]  
10  
Iq/(Iq@500Hz)  
1.75  
Tj = 130°C  
9
Tj = -40°C  
Tj = 25°C  
8
1.5  
Tj = 25°C  
7
Tj = -40°C  
Tj = 100°C  
6
5
4
3
2
1
0
1.25  
Tj = 130°C  
1
0.75  
0
8
1 6  
2 4  
V s [V]  
32  
4 0  
4 8  
0
10  
20  
30  
fsw [kHz]  
40  
50  
60  
Figure 3. TypicalRDS (ON) vs. Supply Voltage.  
Figure 4. Source Drain Forward ON voltage  
vs. Junction Temperature.  
R D S (O N )  
VSD [V]  
2
[ Ω ]  
0 . 7  
0 . 6  
1.75  
1.5  
1.25  
1
T j = 1 3 0 ° C  
0 . 5  
0 . 4  
T j = 2 5 ° C  
0 . 3  
0.75  
T j= - 4 0° C  
0 . 2  
0.5  
Iout=4A  
0 . 1  
Io u t = 4 A  
0.25  
0
0
0
8
1 6  
2 4  
3 2  
4 0  
4 8  
-50  
-25  
0
25  
50  
Tj [°C]  
75  
100  
125  
150  
V s [V ]  
Figure6. ReferenceVoltagevs. Supply Voltage.  
Figure 5. Typical Diode Forward ON charac-  
teristics  
ISD [A]  
5
Vref [V]  
12  
Tj = 25°C  
10  
8
4
DM O S (ON )  
DM O S (OFF)  
3
2
1
0
6
4
Tj = 25°C  
2
0
0
0.5  
1
1.5  
2
0
10  
20  
30  
Vs [V]  
40  
50  
VSD [V]  
6/10  
L6234  
Figure 8. PowerSO-20 Transient Thermal Re-  
Figure 7. Reference Voltage vs. Junction Tem-  
sistance  
perature.  
Vre f [V]  
11  
Vs = 52V  
Vs = 24V  
10  
9
8
7
6
5
4
3
2
1
0
Vs = 10V  
V s = 7V  
-50  
-25  
0
2 5  
50  
7 5  
100  
125  
150  
T j [°C]  
Figure 9. PowerSO-20 Thermal Resistance  
Figure 10. PowerSO-20Thermal Resistance  
(Mounted on FR4 monolayersubstrate)  
(Mounted on Aluminium substrate)  
Figure 11. PowerSO-20: with external heatsink  
Figure 12. Thermal Impedance of PowerSO-20  
and standard SO20  
7/10  
L6234  
PowerSO-20PACKAGE MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
0.1  
TYP.  
MAX.  
3.6  
MIN.  
MAX.  
0.142  
0.012  
0.130  
0.004  
0.021  
0.013  
0.630  
0.386  
0.570  
A
a1  
a2  
a3  
b
0.3  
0.004  
3.3  
0
0.1  
0.000  
0.016  
0.009  
0.622  
0.370  
0.547  
0.4  
0.53  
0.32  
16  
c
0.23  
15.8  
9.4  
D (1)  
D1  
E
9.8  
13.9  
14.5  
e
1.27  
0.050  
0.450  
e3  
E1 (1)  
E2  
E3  
G
11.43  
10.9  
11.1  
2.9  
0.429  
0.437  
0.114  
0.244  
0.004  
0.626  
0.043  
0.043  
5.8  
0
6.2  
0.228  
0.000  
0.610  
0.1  
H
15.5  
15.9  
1.1  
h
L
0.8  
1.1  
0.031  
N
10° (max.)  
8° (max)  
S
T
10  
0.394  
(1) ”D and F” do not include mold flash or protrusions.  
- Mold flash or protrusions shall not exceed 0.15 mm (0.006”).  
- Critical dimensions: ”E”, ”G” and ”a3”  
R
N
N
a2  
A
c
a1  
b
e
DETAILB  
DETAILA  
E
e3  
D
DETAILA  
lead  
20  
11  
slug  
a3  
DETAILB  
0.35  
E2  
E1  
Gage Plane  
T
- C -  
SEATING PLANE  
S
L
G
C
(COPLANARITY)  
1
10  
PSO20MEC  
h x 45°  
8/10  
L6234  
POWERDIP 20 PACKAGE MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
0.51  
0.85  
TYP.  
MAX.  
1.40  
MIN.  
0.020  
0.033  
MAX.  
a1  
B
b
0.055  
0.50  
0.020  
b1  
D
E
0.38  
0.50  
0.015  
0.020  
0.976  
24.80  
8.80  
2.54  
0.346  
0.100  
0.900  
e
e3  
F
22.86  
7.10  
5.10  
0.280  
0.201  
I
L
3.30  
0.130  
Z
1.27  
0.050  
9/10  
L6234  
Informationfurnished isbelievedto beaccurateandreliable.However,SGS-THOMSONMicroelectronicsassumesnoresponsibilityforthe  
consequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.No  
licenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSGS-THOMSONMicroelectronics.Specificationmentioned  
inthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesand replacesallinformationpreviouslysupplied.SGS-  
THOMSONMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpress  
writtenapprovalofSGS-THOMSONMicroelectronics.  
1998 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
10/10  

L6234PD013TR CAD模型

原理图符号

PCB 封装图

3D模型

L6234PD013TR 替代型号

型号 制造商 描述 替代类型 文档
L6234PD STMICROELECTRONICS THREE PHASE MOTOR DRIVER 类似代替
L6234 STMICROELECTRONICS THREE PHASE MOTOR DRIVER 功能相似

L6234PD013TR 相关器件

型号 制造商 描述 价格 文档
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L6235D013TR STMICROELECTRONICS DMOS驱动器，用于三相无刷DC电机 获取价格
L6235N STMICROELECTRONICS DMOS DRIVER FOR THREE-PHASE BRUSHLESS DC MOTOR 获取价格
L6235PD STMICROELECTRONICS DMOS DRIVER FOR THREE-PHASE BRUSHLESS DC MOTOR 获取价格
L6235PD013TR STMICROELECTRONICS DMOS驱动器，用于三相无刷DC电机 获取价格
L6235Q STMICROELECTRONICS DMOS驱动器，用于三相无刷DC电机 获取价格
L6236 ETC Industrial Control IC 获取价格
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