概述
数据手册TC4421 概述
9A HIGH-SPEED MOSFET DRIVERS 9A高速MOSFET驱动器
TC4421 数据手册
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TC4421
TC4422
9A HIGH-SPEED MOSFET DRIVERS
FEATURES
■ Tough CMOS™ Construction
■ High Peak Output Current .................................. 9A
■ High Continuous Output Current ............... 2A Max
■ Fast Rise and Fall Times:
— 30 nsec with 4,700 pF Load
— 180 nsec with 47,000 pF Load
■ Short Internal Delays............................ 30nsec Typ
■ Low Output Impedance ............................ 1.4W Typ
GENERAL DESCRIPTION
The TC4421/4422 are high current buffer/drivers
capable of driving large MOSFETs and IGBTs.
They are essentially immune to any form of upset
except direct overvoltage or over-dissipation — they can-
not be latched under any conditions within their power and
voltage ratings; they are not subject to damage or improper
operation when up to 5V of ground bounce is present on
their ground terminals; they can accept, without either
damage or logic upset, more than 1A inductive current of
either polarity being forced back into their outputs. In addi-
tion, all terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421/4422 inputs may be driven directly from
either TTL or CMOS (3V to 18V). In addition, 300 mV of
hysteresis is built into the input, providing noise immunity
and allowing the device to be driven from slowly rising or
falling waveforms.
APPLICATIONS
■ Line Drivers for Extra-Heavily-Loaded Lines
■ Pulse Generators
■ Driving the Largest MOSFETs and IGBTs
■ Local Power ON/OFF Switch
■ Motor and Solenoid Driver
PIN CONFIGURATIONS
5-Pin TO-220
8-Pin Plastic DIP/CerDIP
ORDERING INFORMATION
V
V
DD
1
2
3
4
8
7
6
5
Part No.
Package
Temperature Range
DD
OUTPUT
OUTPUT
GND
INPUT
NC
TC4421CAT
TC4421CPA
TC4421EPA
TC4421MJA
5-Pin TO-220
8-Pin PDIP
0°C to +70°C
0°C to +70°C
TC4421
TC4422
TC4421
TC4422
GND
8-Pin PDIP
– 40°C to +85°C
– 55°C to+125°C
Tab is
Common
8-Pin CerDIP
to V
TC4422CAT
TC4422CPA
TC4422EPA
TC4422MJA
5-Pin TO-220
8-Pin PDIP
0°C to +70°C
0°C to +70°C
DD
NOTE: Duplicate pins must bothbe connected
for proper operation.
8-Pin PDIP
– 40°C to +85°C
– 55°C to+125°C
NC = No connection
8-Pin CerDIP
FUNCTIONAL BLOCK DIAGRAM
V
DD
INVERTING
300 mV
OUTPUT
NONINVERTING
TC4421/TC4422
INPUT
GND
4.7V
Inverting/Noninverting
EFFECTIVE
INPUT C
25 pF
TC4421/2-7 -1018/96
TELCOM SEMICONDUCTOR, INC.
4-231
9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
Operating Temperature (Ambient)
ABSOLUTE MAXIMUM RATINGS*
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version .......................................– 55°C to +125°C
Lead Temperature (10 sec)..................................... 300°C
Supply Voltage ............................................................20V
Input Voltage .......................... (VDD + 0.3V) to (GND - 5V)
Input Current (VIN > VDD) ........................................50 mA
Power Dissipation, TA ≤ 70°C
PDIP ..................................................................730W
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Power Dissipation, TA ≤ 70°C
5-Pin TO-220 (With Heat Sink) .........................1.60W
Derating Factors (To Ambient)
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
PDIP ............................................................. 8mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedance (To Case)
5-Pin TO-220 RQJ-C ..................................................... 10°C/W
Storage Temperature ............................– 65°C to +150°C
Operating Temperature (Chip) ................................ 150°C
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified.
Symbol
Input
Parameter
Test Conditions
Min
Typ
Max
Unit
VIH
VIL
IIN
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
2.4
—
1.8
1.3
—
—
0.8
10
V
V
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
See Figure 1
VDD – 0.025
—
—
—
0.025
—
V
V
Ω
Ω
A
A
See Figure 1
—
—
—
—
2
Output Resistance, High
Output Resistance, Low
Peak Output Current
VDD = 18V, IO = 10 mA
VDD = 18V, IO = 10 mA
VDD = 18V
1.4
0.9
9
RO
1.7
IPK
—
IDC
Continuous Output Current 10V ≤ VDD ≤ 18V, TC = 25°
(TC4421/22 CAT only)
IREV
Latch-Up Protection
Duty Cycle ≤ 2%
>1500
—
—
mA
Withstand Reverse Current
t ≤ 300 µsec
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 10,000 pF
Figure 1, CL = 10,000 pF
Figure 1
—
—
—
—
60
60
30
33
75
75
60
60
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
tD2
Delay Time
Delay Time
Figure 1
Power Supply
IS
Power Supply Current
Operating Input Voltage
VIN = 3V
VIN = 0V
—
—
0.2
55
—
1.5
150
18
mA
µA
V
VDD
4.5
Input
VIH
VIL
IIN
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
V
0V ≤ VIN ≤ VDD
– 10
µA
4-232
TELCOM SEMICONDUCTOR, INC.
9A HIGH-SPEED MOSFET DRIVERS
4
TC4421
TC4422
ELECTRICAL CHARACTERISTICS (cont.):
Measured over operating temperature range with 4.5V ≤ VS ≤ 18V unless otherwise specified.
Symbol
Input
Parameter
Test Conditions
Min
Typ
Max
Unit
VIH
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
V
VIL
IIN
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
See Figure 1
VDD – 0.025
—
—
—
0.025
3.6
V
V
See Figure 1
—
—
—
Output Resistance, High
Output Resistance, Low
VDD = 18V, IO = 10 mA
VDD = 18V, IO = 10 mA
2.4
1.8
W
W
RO
2.7
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 10,000 pF
Figure 1, CL = 10,000 pF
Figure 1
—
—
—
—
60
60
50
65
120
120
80
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
Delay Time
Delay Time
tD2
Figure 1
80
Power Supply
IS
Power Supply Current
Operating Input Voltage
VIN = 3V
VIN = 0V
—
—
0.45
0.06
—
3
mA
V
0.2
18
VDD
4.5
NOTE: 1. Switching times guaranteed by design.
V
= 18V
DD
0.1 µF
+5V
90%
D2
1
8
INPUT
0.1 µF
0.1 µF
10%
0V
t
t
F
D1
t
t
R
2
6
7
+18V
INPUT
OUTPUT
90%
90%
OUTPUT
0V
C
= 10,000 pF
10%
10%
L
TC4421
4
5
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10nsec
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
4-233
9A HIGH SPEED MOSFET DRIVERS
TC4421
TC4422
TYPICAL CHARACTERISTICS
Fall Time vs. Supply Voltage
Rise Time vs. Supply Voltage
180
220
200
160
180
140
22,000 pF
160
22,000 pF
120
140
120
100
80
10,000 pF
100
10,000 pF
80
60
4700 pF
60
4700 pF
40
40
1000 pF
20
20
0
1000 pF
0
4
6
8
10
12
DD
14
16
18
14
16
18
4
6
8
10
12
V
V
DD
Fall TIme vs. Capacitive Load
Rise TIme vs. Capacitive Load
300
250
200
150
300
250
200
150
100
50
5V
5V
10V
10V
15V
15V
100
50
0
0
100
1000
10,000
(pF)
100,000
100
1000
10,000
(pF)
100,000
C
C
LOAD
LOAD
Rise and Fall Times vs. Temperature
Propagation Delay vs. Supply Voltage
50
45
90
80
C
= 10,000 pF
C
= 1000 pF
LOAD
= 15V
LOAD
V
DD
70
60
50
40
30
40
35
30
25
t
RISE
t
D2
t
D1
t
FALL
–40
0
40
(°C)
80
120
4
6
8
10
12
DD
14
16
18
T
V
A
4-234
TELCOM SEMICONDUCTOR, INC.
9A HIGH SPEED MOSFET DRIVERS
4
TC4421
TC4422
TYPICAL CHARACTERISTICS (Cont.)
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
(V = 18V)
(V = 18V)
DD
DD
220
200
180
160
140
47,000 pF
22,000 pF
2 MHz
180
160
140
120
100
80
10,000 pF
120
100
63.2 kHz
20 kHz
1.125 MHz
0.1 µF
80
60
632 kHz
200 kHz
60
40
4700 pF
40
20
0
20
0
470 pF
100
1000
10,000
(pF)
100,000
10
100
FREQUENCY (kHz)
1000
C
LOAD
Supply Current vs. Frequency
(V = 12)
Supply Current vs. Capacitive Load,
= 12)
(V
DD
DD
180
160
140
120
100
80
180
160
140
120
100
80
22,000 pF
10,000 pF
47,000 pF
2 MHz
63.2 kHz
20 kHz
1.125 MHz
60
60
4700 pF
470 pF
0.1 µF
40
40
20
0
632 kHz
200 kHz
20
0
100
1000
10,000
(pF)
100,000
10
100
1000
C
FREQUENCY (kHz)
LOAD
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
(V = 6V)
(V = 6V)
DD
DD
100
90
80
70
60
50
40
30
20
10
0
120
100
80
200 kHz
47,000 pF
22,000 pF
10,000 pF
4700 pF
60
63.2 kHz
20 kHz
2 MHz
40
632 kHz
0.1 µF
20
0
470 pF
1
0
100
100000
100
1000
10,000
(pF)
100,000
C
FREQUENCY (kHz)
LOAD
TELCOM SEMICONDUCTOR, INC.
4-235
9A HIGH SPEED MOSFET DRIVERS
TC4421
TC4422
TYPICAL CHARACTERISTICS (Cont.)
Propagation Delay vs. Input Amplitude
Propagation Delay vs. Temperature
120
50
V
C
= 10V
110
100
90
80
70
60
50
40
30
20
10
0
DD
= 10000V
45
40
35
LOAD
t
t
t
D1
D2
D2
30
25
20
t
D1
1
2
3
4
5
6
7
8
9
10
–60 –40 –20
0
20 40 60 80 100 120
(°C)
INPUT (V)
T
A
Quiescent Supply Current vs. Temperature
10
Crossover Energy vs. Supply Voltage
–6
3
10
10
V
= 18V
DD
–7
INPUT = 1
INPUT = 0
2
10
–8
10
4
6
8
10
V
12
DD
14
16
18
–60 –40 –20
0
20 40 60 80 100 120
(°C)
T
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
J
High-State Output Resistance
Low-State Output Resistance
vs. Supply Voltage
vs. Supply Voltage
6
6
5.5
5
5.5
5
4.5
4
4.5
T = 150° C
J
4
3.5
3
3.5
3
T
= 150°C
J
2.5
2
2.5
2
T = 25° C
J
1.5
1
1.5
1
T
= 25°C
8
J
0.5
0.5
4
6
8
10
V
12
14
16
18
4
6
10
V
12
14
16
18
(V)
(V)
DD
DD
4-236
TELCOM SEMICONDUCTOR, INC.
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