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1N5402G-K

更新时间：2025-06-30 21:59:44
品牌：TSC
描述：3A, 50V - 1000V Glass Passivated Rectifier

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免费 PCB/SMT

1N5402G-K 概述

3A, 50V - 1000V Glass Passivated Rectifier

1N5402G-K 数据手册

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1N5400G-K - 1N5408G-K  
Taiwan Semiconductor  
3A, 50V - 1000V Glass Passivated Rectifier  
FEATURES  
KEY PARAMETERS  
● Glass passivated chip junction  
● High current capability, Low VF  
● High reliability  
PARAMETER  
IF(AV)  
VRRM  
VALUE  
UNIT  
3
A
V
50 - 1000  
125  
● High surge current capability  
● Low power loss, high efficiency  
● Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
● Halogen-free according to IEC 61249-2-21  
IFSM  
A
TJ MAX  
150  
°C  
Package  
Configuration  
DO-201AD  
Single Die  
APPLICATIONS  
● High frequency rectification  
● Freewheeling application  
● Switching mode converters and inverters in computer and  
telecommunication.  
MECHANICAL DATA  
● Case: DO-201AD  
● Molding compound meets UL 94V-0 flammability rating  
● Packing code with suffix "G" means green compound  
(halogen-free)  
● Terminal: Pure tin plated leads, solderable per J-STD-002  
● Meet JESD 201 class 1A whisker test  
● Polarity: As marked  
● Weight: 1.2 g (approximately)  
DO-201AD  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408  
PARAMETER  
SYMBOL  
UNIT  
G-K  
G-K  
G-K  
G-K  
G-K  
G-K  
G-K  
Marking code on the device  
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G  
Repetitive peak reverse  
voltage  
Reverse voltage, total rms  
value  
Maximum DC blocking  
voltage  
VRRM  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
VR(RMS)  
VDC  
100  
400  
3
1000  
V
A
Forward current  
IF(AV)  
Surge peak forward current,  
8.3 ms single half sine-wave  
superimposed on rated load  
per diode  
IFSM  
125  
A
Junction temperature  
Storage temperature  
TJ  
- 55 to +150  
- 55 to +150  
°C  
°C  
TSTG  
1
Version:B1705  
1N5400G-K - 1N5408G-K  
Taiwan Semiconductor  
THERMAL PERFORMANCE  
PARAMETER  
SYMBOL  
RӨJA  
LIMIT  
45  
UNIT  
°C/W  
°C/W  
Junction-to-ambient thermal resistance  
Junction-to-case thermal resistance  
RӨJC  
15  
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)  
PARAMETER  
CONDITIONS  
SYMBOL  
TYP  
MAX  
UNIT  
1N5400G-K  
1N5401G-K  
1N5402G-K  
1N5404G-K  
1N5406G-K  
1N5407G-K  
1N5408G-K  
-
1.1  
V
Forward voltage per diode (1)  
IF = 3A,TJ = 25°C  
VF  
-
1.0  
V
-
-
5
100  
-
µA  
µA  
pF  
TJ = 25°C  
Reverse current @ rated VR per diode (2)  
IR  
TJ = 125°C  
1 MHz, VR=4.0V  
25  
Junction capacitance  
Notes:  
CJ  
1. Pulse test with PW=0.3 ms  
2. Pulse test with PW=30 ms  
ORDERING INFORMATION  
PACKING CODE  
SUFFIX  
PART NO.  
PACKING CODE  
PACKAGE  
PACKING  
A0  
R0  
B0  
DO-201AD  
DO-201AD  
DO-201AD  
500 / Ammo box  
1N540xG-K  
(Note 1, 2)  
G
1,250 / 13" Paper reel  
500 / Bulk packing  
Notes:  
1. "x" defines voltage from 50V (1N5400G-K) to 1000V (1N5408G-K)  
2. Whole series with green compound (halogen-free)  
EXAMPLE P/N  
PACKING CODE  
EXAMPLE P/N  
PART NO.  
PACKING CODE  
DESCRIPTION  
SUFFIX  
1N5400G-K A0G  
1N5400G-K  
A0  
Green compound  
G
2
Version:B1705  
1N5400G-K - 1N5408G-K  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig.1 Forward Current Derating Curve  
Fig.2 Typical Junction Capacitance  
4
3
2
1
0
1000  
100  
10  
f=1.0MHz  
Vslg=50mVp-p  
0
25  
50  
75  
100  
125  
150  
1
10  
100  
AMBIENT TEMPERATURE(oC)  
REVERSE VOLTAGE (V)  
Fig.3 Typical Reverse Characteristics  
Fig.4 Typical Forward Characteristics  
100  
10  
100  
10  
1N5402G-K - 1N5408G-K  
1
TJ=125°C  
1
0.1  
TJ=75°C  
1N5400G-K - 1N5401G-K  
0.1  
0.01  
0.01  
0.001  
TJ=25°C  
0
20  
40  
60  
80  
100  
120  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FORWARD VOLTAGE (V)  
3
Version:B1705  
1N5400G-K - 1N5408G-K  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig.5 Maximum Non-repetitive Forward Surge Current  
250  
200  
150  
100  
50  
0
1
10  
100  
NUMBER OF CYCLES AT 60 Hz  
4
Version:B1705  
1N5400G-K - 1N5408G-K  
Taiwan Semiconductor  
PACKAGE OUTLINE DIMENSIONS  
DO-201AD  
Unit (mm)  
Unit (inch)  
DIM.  
Min  
5.00  
Max  
Min  
Max  
A
B
C
D
E
5.60  
1.30  
-
0.197  
0.048  
1.000  
0.335  
1.000  
0.220  
1.20  
0.052  
25.40  
8.50  
-
0.375  
-
9.50  
-
25.40  
MARKING DIAGRAM  
P/N  
= Marking Code  
G
= Green Compound  
YWW = Date Code  
= Factory Code  
F
5
Version:B1705  
1N5400G-K - 1N5408G-K  
Taiwan Semiconductor  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
6
Version:B1705  

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