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SI7445DP

更新时间：2025-07-09 02:17:26
品牌：VISHAY
描述：P-Channel 20-V (D-S) MOSFET

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SI7445DP 概述

P-Channel 20-V (D-S) MOSFET P通道20 -V （D -S ）的MOSFET 其他晶体管

SI7445DP 规格参数

是否Rohs认证：不符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.88
Is Samacsys：N配置：Single
最大漏极电流 (Abs) (ID)：12 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-609代码：e0工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：5.4 W子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

SI7445DP 数据手册

通过下载SI7445DP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7445DP  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKr  
Package with Low 1.07-mm Profile  
D 100% Rg Tested  
0.0077 @ V = -4.5 V  
-19  
-17  
-15  
GS  
-20  
0.0094 @ V = -2.5  
V
V
GS  
APPLICATIONS  
0.0125 @ V = -1.8  
GS  
D Load Switch Battery Applications  
PowerPAK SO-8  
S
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
G
4
D
8
D
7
D
6
D
5
D
Bottom View  
P-Channel MOSFET  
Ordering Information: Si7445DP-T1  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
-20  
DS  
V
"8  
GS  
T
= 25_C  
= 70_C  
-12  
-9  
-19  
-15  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
-50  
DM  
a
continuous Source Current (Diode Conduction)  
I
-4.3  
5.4  
-1.6  
1.9  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
3.4  
1.2  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
18  
52  
23  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.0  
1.3  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71626  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
1
 
Si7445DP  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = -250 mA  
-0.45  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "8 V  
"100  
nA  
GSS  
DS  
GS  
V
= -16 V, V = 0 V  
-1  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= -16 V, V = 0 V, T = 70_C  
-10  
GS  
J
a
On-State Drain Current  
I
V
DS  
v -5 V, V = -4.5 V  
-40  
A
D(on)  
GS  
V
= -4.5 V, I = -19 A  
D
0.0064  
0.0078  
0.0105  
0.0077  
0.0094  
0.0125  
GS  
a
V
= -2.5 V, I = -17 A  
D
Drain-Source On-State Resistance  
r
W
GS  
GS  
DS(on)  
V
= -1.8 V, I = -10 A  
D
a
Forward Transconductance  
g
75  
S
V
V
I
= -15 V, I = -19 A  
D
fs  
DS  
a
Diode Forward Voltage  
V
SD  
= -4.3 A, V = 0 V  
-0.65  
-1.1  
140  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate-Resistance  
Turn-On Delay Time  
Rise Time  
Q
92  
19  
g
Q
Q
V
DS  
= -15 V, V = -5 V, I = -19 A  
nC  
gs  
gd  
GS  
D
16.5  
2
R
1
3.4  
60  
W
g
t
40  
d(on)  
t
45  
65  
r
V
= -15 V, R = 15 W  
L
DD  
I
D
^ -1 A, V  
= -4.5 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
400  
190  
50  
600  
290  
80  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = -4.3 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
50  
40  
30  
20  
10  
0
V
GS  
= 5 thru 2 V  
40  
30  
20  
10  
0
1.5 V  
T
= 125_C  
C
25_C  
-55_C  
0
2
4
6
8
10  
0.0  
0.5  
1.0  
1.5  
2.0  
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 71626  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
2
Si7445DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.020  
15000  
12000  
9000  
6000  
3000  
0
C
iss  
0.016  
V
GS  
= 1.8 V  
0.012  
0.008  
0.004  
0.000  
V
V
= 2.5 V  
= 4.5 V  
GS  
GS  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
0
4
8
12  
16  
20  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
V
GS  
= 4.5 V  
DS  
I
D
= 19  
A
I = 19 A  
D
0
20  
40  
60  
80  
100  
-50  
-25  
0
J
25  
50  
75  
100 125 150  
Q
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.030  
0.024  
0.018  
0.012  
0.006  
0.000  
50  
I
D
= 19 A  
T
= 150_C  
J
10  
T
= 25_C  
J
1
0.0  
0
2
4
6
8
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 71626  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
3
Si7445DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-To-Ambient  
0.6  
200  
160  
120  
I
D
= 250 mA  
0.4  
0.2  
0.0  
80  
40  
-0.2  
-0.4  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
- Temperature (_C)  
Time (sec)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 65_C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71626  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
4

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