SI7844DP-T1-E3

更新时间:2025-02-07 18:52:35
品牌:VISHAY
描述:Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R

SI7844DP-T1-E3 概述

Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R MOS管 功率场效应晶体管

SI7844DP-T1-E3 规格参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-XDSO-C6
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.81
外壳连接:DRAIN配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):6.4 A
最大漏极电流 (ID):6.4 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XDSO-C6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.5 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI7844DP-T1-E3 数据手册

通过下载SI7844DP-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7844DP  
Vishay Siliconix  
Dual N-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)  
10  
Definition  
0.022 at VGS = 10 V  
0.030 at VGS = 4.5 V  
TrenchFET® Power MOSFET  
100 % Rg Tested  
30  
8.5  
Compliant to RoHS Directive 2002/95/EC  
PowerPAK® SO-8  
S1  
5.15 mm  
6.15 mm  
1
D
2
D
1
G1  
2
S2  
3
G2  
4
D1  
8
D1  
G
1
G
2
7
D2  
6
D2  
5
Bottom View  
Ordering Information: Si7844DP-T1-E3 (Lead (Pb)-free)  
Si7844DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
S
S
1
2
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
20  
V
VGS  
20  
TA = 25 °C  
TA = 70 °C  
10  
6.4  
5.1  
Continuous Drain Current (TJ = 150 °C)a  
ID  
8.0  
A
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
IDM  
IS  
2.9  
3.5  
2.2  
1.1  
1.4  
0.9  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b, c  
TJ, Tstg  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
26  
Maximum  
Unit  
t 10 s  
35  
85  
Maximum Junction-to-Ambienta  
Steady State  
Steady State  
60  
°C/W  
RthJC  
Maximum Junction-to-Case (Drain)  
3.9  
5.5  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71328  
S10-2606-Rev. E, 15-Nov-10  
www.vishay.com  
1
Si7844DP  
Vishay Siliconix  
SPECIFICATIONS (T = 25 °C, unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 µA  
0.8  
2.4  
100  
1
V
VDS = 0 V, VGS  
=
20 V  
nA  
VDS = 30 V, VGS = 0 V  
DS = 30 V, VGS = 0 V, TJ = 55 °C  
VDS 5 V, VGS = 10 V  
VGS = 10 V, ID = 10 A  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
IDSS  
ID(on)  
µA  
A
V
5
20  
0.018  
0.024  
22  
0.022  
0.030  
Drain-Source On-State Resistancea  
RDS(on)  
VGS = 4.5 V, ID = 8.5 A  
VDS = 15 V, ID = 10 A  
Forward Transconductancea  
Diode Forward Voltagea  
Dynamicb  
gfs  
S
V
VSD  
IS = 2.9 A, VGS = 0 V  
0.75  
1.2  
20  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Qg  
Qgs  
Qgd  
Rg  
13  
2
VDS = 15 V, VGS = 10 V, ID = 10 A  
nC  
2.7  
0.5  
3.2  
16  
20  
40  
20  
80  
Turn-On Delay Time  
Rise Time  
td(on)  
tr  
td(off)  
tf  
8
10  
21  
10  
40  
V
DD = 15 V, RL = 15  
ID 1 A, VGEN = 10 V, Rg = 6   
Turn-Off Delay Time  
Fall Time  
ns  
Source-Drain Reverse Recovery Time  
trr  
IF = 2.9 A, dI/dt = 100 A/µs  
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
20  
20  
16  
12  
8
3 V  
V
= 10 V thru 4 V  
16  
GS  
12  
8
T
C
= 125 °C  
4
4
25 °C  
2 V  
- 55 °C  
2.5  
0
0.0  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.5  
1.0  
1.5  
2.0  
3.0  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Output Characteristics  
Transfer Characteristics  
www.vishay.com  
2
Document Number: 71328  
S10-2606-Rev. E, 15-Nov-10  
Si7844DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
0.040  
1000  
800  
600  
400  
200  
0
0.032  
C
iss  
V
= 4.5 V  
GS  
0.024  
0.016  
0.008  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
4
8
12  
16  
20  
0
6
12  
18  
24  
30  
I
- Drain Current (A)  
V
- Drain-to-Source Voltage (V)  
D
DS  
On-Resistance vs. Drain Current  
Capacitance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
10  
8
V
I
= 10 V  
= 10 A  
V
I
= 15 V  
= 10 A  
GS  
D
DS  
D
6
4
2
0
- 50 - 25  
0
25  
T - Junction Temperature (°C)  
J
50  
75  
100 125 150  
0
3
6
9
12  
15  
Q - Total Gate Charge (nC)  
g
Gate Charge  
On-Resistance vs. Junction Temperature  
0.04  
0.03  
0.02  
0.01  
0.00  
20  
10  
T = 150 °C  
J
I
D
= 10 A  
T = 25 °C  
J
1
0
2
4
6
8
10  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V - Gate-to-Source Voltage (V)  
GS  
V
- Source-to-Drain Voltage (V)  
SD  
On-Resistance vs. Gate-to-Source Voltage  
Source-Drain Diode Forward Voltage  
Document Number: 71328  
S10-2606-Rev. E, 15-Nov-10  
www.vishay.com  
3
Si7844DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
0.4  
100  
80  
0.2  
I
D
= 250 µA  
0.0  
- 0.2  
- 0.4  
- 0.6  
- 0.8  
60  
40  
20  
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
1
10  
0.1  
T
J
- Temperature (°C)  
Time (s)  
Threshold Voltage  
Single Pulse Power  
100  
Limited by R  
*
DS(on)  
10  
1 ms  
1
10 ms  
100 ms  
1 s  
10 s  
0.1  
DC  
T
A
= 25 °C  
Single Pulse  
BVDSS Limited  
1 10  
0.01  
0.01  
0.1  
100  
VDS - Drain-to-Source Voltage (V)  
* VGS > minimum VGS at which RDS(on) is specified  
Safe Operating Area  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 60 °C/W  
thJA  
(t)  
3. T  
- T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
www.vishay.com  
4
Document Number: 71328  
S10-2606-Rev. E, 15-Nov-10  
Si7844DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
1
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?71328.  
Document Number: 71328  
S10-2606-Rev. E, 15-Nov-10  
www.vishay.com  
5
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

SI7844DP-T1-E3 替代型号

型号 制造商 描述 替代类型 文档
SI7272DP-T1-GE3 VISHAY Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R 类似代替

SI7844DP-T1-E3 相关器件

型号 制造商 描述 价格 文档
SI7844DP-T1-GE3 VISHAY Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R 获取价格
SI7846DP VISHAY N-Channel 150-V (D-S) MOSFET 获取价格
SI7846DP-E3 VISHAY TRANSISTOR 4 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 获取价格
SI7846DP-T1 VISHAY N-Channel 150-V (D-S) MOSFET 获取价格
SI7846DP-T1-E3 VISHAY N-Channel 150-V (D-S) MOSFET 获取价格
SI7846DP-T1-GE3 VISHAY N-Channel 150-V (D-S) MOSFET 获取价格
SI7848BDP VISHAY N-Channel 40-V (D-S) MOSFET 获取价格
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SI7848DP-E3 VISHAY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 获取价格

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