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SI7858DP-E3

更新时间：2025-07-01 15:08:26
品牌：VISHAY
描述：TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power

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SI7858DP-E3 概述

TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 功率场效应晶体管

SI7858DP-E3 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOT
包装说明：SMALL OUTLINE, R-XDSO-C5针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.29外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：12 V
最大漏极电流 (Abs) (ID)：18 A最大漏极电流 (ID)：18 A
最大漏源导通电阻：0.003 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XDSO-C5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：5.4 W最大脉冲漏极电流 (IDM)：60 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管元件材料：SILICON
Base Number Matches：1

SI7858DP-E3 数据手册

通过下载SI7858DP-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7858DP  
Vishay Siliconix  
New Product  
N-Channel 12-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
D New Low Thermal Resistance PowerPAKt  
Package with Low 1.07-mm Profile  
PRODUCT SUMMARY  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
D Low Output Voltage, High Current  
0.003 @ V = 4.5 V  
29  
23  
GS  
12  
Synchronous Rectifiers  
0.004 @ V = 2.5 V  
GS  
PowerPAKt SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
12  
DS  
GS  
V
V
"8  
T
= 25_C  
= 70_C  
29  
23  
18  
14  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
60  
DM  
a
Continuous Source Current (Diode Conduction)  
I
4.5  
5.4  
3.4  
1.6  
1.9  
1.2  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
18  
50  
23  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.0  
1.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71832  
S-20118—Rev. A, 11-Mar-02  
www.vishay.com  
1
Si7858DP  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
V
= V , I = 250 mA  
0.6  
0.95  
1.3  
"100  
1
V
GS(th)  
DS  
GS  
D
= 0 V, V = "8 V  
I
nA  
DS  
GS  
GSS  
V
= 9.6 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 9.6 V, V = 0 V, T = 55_C  
5
GS  
J
a
On-State Drain Current  
I
30  
A
V
DS  
w 5 V, V = 4.5 V  
GS  
D(on)  
0.0024  
0.003  
0.004  
V
= 4.5 V, I = 29 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 2.5 V, I = 23 A  
0.0031  
130  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 6 V, I = 29 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
SD  
I
= 2.9 A, V = 0 V  
0.75  
1.1  
60  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
40  
6.7  
9.2  
1.4  
40  
Q
gs  
Q
gd  
V
= 6 V, V = 4.5 V, I = 29 A  
nC  
DS  
GS  
D
R
G
W
t
t
60  
60  
d(on)  
t
r
40  
V
= 6 V, R = 6 W  
L
DD  
I
D
^ 1 A, V  
= 4.5 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
140  
70  
210  
100  
80  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
= 2.9 A, di/dt = 100 A/ms  
50  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
60  
60  
50  
40  
30  
20  
10  
0
V
= 5 thru 2 V  
GS  
50  
40  
30  
20  
10  
0
T
C
= 125_C  
25_C  
1.5 V  
1.5  
–55_C  
0.0  
0.5  
1.0  
2.0  
2.5  
3.0  
0.0  
0.5  
V – Gate-to-Source Voltage (V)  
GS  
1.0  
1.5  
2.0  
V
– Drain-to-Source Voltage (V)  
DS  
Document Number: 71832  
S-20118—Rev. A, 11-Mar-02  
www.vishay.com  
2
Si7858DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.005  
7500  
6000  
4500  
3000  
1500  
0
0.004  
C
iss  
V
= 2.5 V  
= 4.5 V  
GS  
0.003  
0.002  
0.001  
0.000  
V
GS  
C
oss  
C
rss  
0
10  
20  
D
30  
40  
50  
60  
0
2
4
6
8
10  
12  
I
– Drain Current (A)  
V
– Drain-to-Source Voltage (V)  
DS  
Gate Charge  
On-Resistance vs. Junction Temperature  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 6 V  
= 25 A  
V
GS  
= 4.5 V  
DS  
I
D
I = 25 A  
D
0
9
18  
27  
36  
45  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
g
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.015  
0.012  
0.009  
0.006  
0.003  
0.000  
60  
10  
T
J
= 150_C  
T
J
= 25_C  
I
D
= 25 A  
1
0
2
4
6
8
0.00  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Document Number: 71832  
S-20118—Rev. A, 11-Mar-02  
www.vishay.com  
3
Si7858DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.4  
200  
160  
0.2  
I
D
= 250 mA  
–0.0  
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
120  
80  
40  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
J
– Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 50_C/W  
thJA  
(t)  
3. T – T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.02  
0.05  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71832  
S-20118—Rev. A, 11-Mar-02  
www.vishay.com  
4

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