SI7858DP-E3
更新时间:2024-11-08 15:08:26
品牌:VISHAY
描述:TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power
SI7858DP-E3 概述
TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 功率场效应晶体管
SI7858DP-E3 规格参数
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-XDSO-C5 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.29 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 12 V |
最大漏极电流 (Abs) (ID): | 18 A | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.003 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XDSO-C5 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 5.4 W | 最大脉冲漏极电流 (IDM): | 60 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
SI7858DP-E3 数据手册
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PDF下载Si7858DP
Vishay Siliconix
New Product
N-Channel 12-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
PRODUCT SUMMARY
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
D Low Output Voltage, High Current
0.003 @ V = 4.5 V
29
23
GS
12
Synchronous Rectifiers
0.004 @ V = 2.5 V
GS
PowerPAKt SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
12
DS
GS
V
V
"8
T
= 25_C
= 70_C
29
23
18
14
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
4.5
5.4
3.4
1.6
1.9
1.2
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
18
50
23
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.0
1.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71832
S-20118—Rev. A, 11-Mar-02
www.vishay.com
1
Si7858DP
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
V
= V , I = 250 mA
0.6
0.95
1.3
"100
1
V
GS(th)
DS
GS
D
= 0 V, V = "8 V
I
nA
DS
GS
GSS
V
= 9.6 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 9.6 V, V = 0 V, T = 55_C
5
GS
J
a
On-State Drain Current
I
30
A
V
DS
w 5 V, V = 4.5 V
GS
D(on)
0.0024
0.003
0.004
V
= 4.5 V, I = 29 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 2.5 V, I = 23 A
0.0031
130
GS
D
a
Forward Transconductance
g
fs
V
= 6 V, I = 29 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
= 2.9 A, V = 0 V
0.75
1.1
60
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
40
6.7
9.2
1.4
40
Q
gs
Q
gd
V
= 6 V, V = 4.5 V, I = 29 A
nC
DS
GS
D
R
G
W
t
t
60
60
d(on)
t
r
40
V
= 6 V, R = 6 W
L
DD
I
D
^ 1 A, V
= 4.5 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
140
70
210
100
80
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= 2.9 A, di/dt = 100 A/ms
50
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 5 thru 2 V
GS
50
40
30
20
10
0
T
C
= 125_C
25_C
1.5 V
1.5
–55_C
0.0
0.5
1.0
2.0
2.5
3.0
0.0
0.5
V – Gate-to-Source Voltage (V)
GS
1.0
1.5
2.0
V
– Drain-to-Source Voltage (V)
DS
Document Number: 71832
S-20118—Rev. A, 11-Mar-02
www.vishay.com
2
Si7858DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.005
7500
6000
4500
3000
1500
0
0.004
C
iss
V
= 2.5 V
= 4.5 V
GS
0.003
0.002
0.001
0.000
V
GS
C
oss
C
rss
0
10
20
D
30
40
50
60
0
2
4
6
8
10
12
I
– Drain Current (A)
V
– Drain-to-Source Voltage (V)
DS
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 6 V
= 25 A
V
GS
= 4.5 V
DS
I
D
I = 25 A
D
0
9
18
27
36
45
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.015
0.012
0.009
0.006
0.003
0.000
60
10
T
J
= 150_C
T
J
= 25_C
I
D
= 25 A
1
0
2
4
6
8
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71832
S-20118—Rev. A, 11-Mar-02
www.vishay.com
3
Si7858DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
200
160
0.2
I
D
= 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
–1.0
120
80
40
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 50_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.02
0.05
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71832
S-20118—Rev. A, 11-Mar-02
www.vishay.com
4
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