SI7858DP-T1
更新时间:2024-11-09 03:44:11
品牌:VISHAY
描述:TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power
SI7858DP-T1 概述
TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power
SI7858DP-T1 数据手册
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PDF下载Si7858DP
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
APPLICATIONS
0.003 @ V = 4.5 V
29
23
GS
12
D Low Output Voltage, High Current
0.004 @ V = 2.5 V
GS
Synchronous Rectifiers
PowerPAK SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET
Bottom View
Ordering Information: Si7858DP-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
12
DS
GS
V
V
"8
T
= 25_C
= 70_C
29
23
18
14
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
4.5
5.4
3.4
1.6
1.9
1.2
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
18
50
23
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.0
1.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71832
S-31727—Rev. B, 18-Aug-03
www.vishay.com
1
Si7858DP
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
V
= V , I = 250 mA
0.6
0.95
1.3
"100
1
V
GS(th)
DS
GS D
= 0 V, V = "8 V
I
nA
DS
GS
GSS
V
= 9.6 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 9.6 V, V = 0 V, T = 55_C
5
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 4.5 V
GS
D(on)
DS
0.0024
0.003
0.004
V
= 4.5 V, I = 29 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 2.5 V, I = 23 A
0.0031
130
GS
D
a
Forward Transconductance
g
fs
V
= 6 V, I = 29 A
S
V
DS
D
a
Diode Forward Voltage
V
I
= 2.9 A, V = 0 V
0.75
1.1
60
SD
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
40
6.7
9.2
1.4
40
Q
gs
Q
gd
V
= 6 V, V = 4.5 V, I = 29 A
nC
DS
GS
D
R
g
0.5
2.3
60
W
t
d(on)
t
r
40
60
V
= 6 V, R = 6 W
L
DD
I
D
^ 1 A, V
= 4.5 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
140
70
210
100
80
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
50
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 5 thru 2 V
GS
50
40
30
20
10
0
T
C
= 125_C
25_C
1.5 V
1.5
-55_C
0.0
0.5
1.0
2.0
2.5
3.0
0.0
0.5
V - Gate-to-Source Voltage (V)
GS
1.0
1.5
2.0
V
- Drain-to-Source Voltage (V)
DS
Document Number: 71832
S-31727—Rev. B, 18-Aug-03
www.vishay.com
2
Si7858DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.005
7500
6000
4500
3000
1500
0
0.004
C
iss
V
= 2.5 V
= 4.5 V
GS
0.003
0.002
0.001
0.000
V
GS
C
oss
C
rss
0
10
20
30
40
50
60
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 6 V
= 25 A
V
= 4.5 V
GS
DS
I
D
I = 25 A
D
0
9
18
27
36
45
-50
-25
0
J
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.015
0.012
0.009
0.006
0.003
0.000
60
10
T = 150_C
J
T = 25_C
J
I
D
= 25 A
1
0
2
4
6
8
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
SD
Document Number: 71832
S-31727—Rev. B, 18-Aug-03
www.vishay.com
3
Si7858DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
200
160
0.2
I
D
= 250 mA
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
120
80
40
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 50_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.02
0.05
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71832
S-31727—Rev. B, 18-Aug-03
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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