SI7962DP-T1-E3

更新时间:2024-10-12 18:23:26
品牌:VISHAY
描述:Trans MOSFET N-CH 40V 7.1A 8-Pin PowerPAK SO T/R

SI7962DP-T1-E3 概述

Trans MOSFET N-CH 40V 7.1A 8-Pin PowerPAK SO T/R 小信号场效应晶体管

SI7962DP-T1-E3 规格参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-C6
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
外壳连接:DRAIN配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):7.1 A
最大漏极电流 (ID):7.1 A最大漏源导通电阻:0.017 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-C6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.5 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI7962DP-T1-E3 数据手册

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Si7962DP  
Vishay Siliconix  
Dual N-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
Available  
TrenchFET® Power MOSFET  
New Low Thermal Resistance PowerPAK®  
Package  
0.017 at VGS = 10 V  
40  
11.1  
46.2  
Dual MOSFET for Space Savings  
100 % Rg Tested  
High Threshold Voltage at High Temperature  
PowerPAK SO-8  
S1  
5.15 mm  
D
1
6.15 mm  
1
D
2
G1  
2
S2  
3
G2  
4
D1  
8
D1  
G
1
7
G
2
D2  
6
D2  
5
Bottom View  
S
1
S
2
Ordering Information: Si7962DP-T1-E3 (Lead (Pb)-free)  
N-Channel MOSFET  
N-Channel MOSFET  
Si7962DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
40  
40  
V
VGS  
20  
TA = 25 °C  
TA = 70 °C  
11.1  
8.9  
7.1  
5.7  
Continuous Drain Current (TJ = 150 °C)a  
ID  
IDM  
IS  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
Single Avalanche Current  
A
2.9  
1.2  
IAS  
EAS  
30  
45  
L = 0.1 mH  
Single Avalanche Energy  
mJ  
W
TA = 25 °C  
TA = 70 °C  
3.5  
2.2  
1.4  
0.9  
Maximum Power Dissipationa  
PD  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b, c  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
26  
Maximum  
Unit  
t 10 s  
Steady State  
Steady State  
35  
85  
Maximum Junction-to-Ambienta  
RthJA  
60  
°C/W  
RthJC  
Maximum Junction-to-Case (Drain)  
2.2  
2.7  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 72914  
S09-0272-Rev. C, 16-Feb-09  
www.vishay.com  
1
Si7962DP  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 µA  
Gate Threshold Voltage  
3.4  
4.5  
100  
1
V
VDS = 0 V, VGS  
=
20 V  
Gate-Body Leakage  
nA  
VDS = 40 V, VGS = 0 V  
DS = 40 V, VGS = 0 V, TJ = 55 °C  
VDS 5 V, VGS = 10 V  
IDSS  
Zero Gate Voltage Drain Current  
µA  
V
5
On-State Drain Currenta  
ID(on)  
RDS(on)  
gfs  
30  
A
Ω
S
V
Drain-Source On-State Resistancea  
Forward Transconductancea  
Diode Forward Voltagea  
VGS = 10 V, ID = 11.1 A  
VDS = 15 V, ID = 11.1 A  
IS = 2.9 A, VGS = 0 V  
0.0135  
31  
0.017  
1.2  
VSD  
0.8  
Dynamicb  
Qg  
Qgs  
Qgd  
Rg  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
46.2  
1.6  
9.6  
2.3  
22  
70  
V
DS = 20 V, VGS = 10 V, ID = 11.1 A  
f = 1 MHz  
nC  
1.1  
3.5  
35  
25  
70  
25  
60  
Ω
td(on)  
tr  
td(off)  
tf  
15  
V
DD = 20 V, RL = 20 Ω  
ID 1 A, VGEN = 10 V, Rg = 6 Ω  
Turn-Off Delay Time  
Fall Time  
55  
ns  
15  
trr  
IF = 2.9 A, dI/dt = 100 A/µs  
Source-Drain Reverse Recovery Time  
35  
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
40  
32  
24  
16  
8
40  
32  
24  
16  
8
V
= 10 thru 7 V  
GS  
6 V  
T
C
= 125 °C  
25 °C  
5 V  
- 55 °C  
6
0
0
0
1
2
-
3
4
5
7
0
1
2
Drain-to-Source Voltage (V)  
Output Characteristics  
3
4
5
V
Gate-to-Source Voltage (V)  
V
-
GS  
DS  
Transfer Characteristics  
www.vishay.com  
2
Document Number: 72914  
S09-0272-Rev. C, 16-Feb-09  
Si7962DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
4000  
3200  
2400  
1600  
800  
0.020  
C
iss  
0.015  
V
= 10 V  
GS  
0.010  
0.005  
0.000  
C
oss  
C
rss  
0
0
8
16  
24  
32  
40  
0
5
10  
15  
-
20  
25  
30  
35  
40  
V
-
Drain-to-Source Voltage (V)  
I
D
Drain Current (A)  
DS  
On-Resistance vs. Drain Current  
Capacitance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
10  
8
V
I
= 10 V  
= 11.1 A  
V
I
= 20 V  
= 11.1 A  
GS  
D
DS  
D
6
4
2
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0
10  
Q
20  
30  
40  
50  
T - Junction Temperature (°C)  
J
-
Total Gate Charge (nC)  
g
Gate Charge  
On-Resistance vs. Junction Temperature  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
40  
10  
T = 150 °C  
J
I
D
= 11.1 A  
T = 25 °C  
J
1
0
2
4
6
8
10  
0.0  
0.3  
V
0.6  
0.9  
1.2  
1.5  
V
- Gate-to-Source Voltage (V)  
-
Source-to-Drain Voltage (V)  
GS  
SD  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Document Number: 72914  
S09-0272-Rev. C, 16-Feb-09  
www.vishay.com  
3
Si7962DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
100  
80  
0.8  
0.4  
I
D
= 250 µA  
0.0  
- 0.4  
- 0.8  
- 1.2  
- 1.6  
60  
40  
20  
0
0.001  
0.01  
0.1  
10  
100  
600  
1
- 50 - 25  
0
25  
50  
75  
100 125 150  
Time (s)  
T - Temperature (°C)  
J
Single Pulse Power  
Threshold Voltage  
100  
I
Limited  
Limited by R  
DM  
DS(on)*  
P(t) = 0.0001  
10  
1
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
T
A
= 25 °C  
0.1  
Single Pulse  
P(t) = 10  
dc  
BVDSS Limited  
10  
0.01  
0.1  
1
100  
V
-
Drain-to-Source Voltage (V)  
DS  
* V  
GS  
> minimum V at which R is specified  
GS  
DS(on)  
Safe Operating Area, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 60 °C/W  
thJA  
(t)  
Z
3. TJM - T = P  
4. Surface Mounted  
A
DM thJA  
Single Pulse  
0.01  
-4  
10  
-3  
10  
-2  
-1  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
www.vishay.com  
4
Document Number: 72914  
S09-0272-Rev. C, 16-Feb-09  
Si7962DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
10  
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?72914.  
Document Number: 72914  
S09-0272-Rev. C, 16-Feb-09  
www.vishay.com  
5
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
conform to JEDEC JS709A standards.  
Revision: 02-Oct-12  
Document Number: 91000  
1

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