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SI7970DP-T1-E3

更新时间：2025-07-12 01:40:32
品牌：VISHAY
描述：Dual N-Channel 40-V (D-S) MOSFET

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SI7970DP-T1-E3 概述

Dual N-Channel 40-V (D-S) MOSFET 双N通道40 -V （D -S ）的MOSFET 小信号场效应晶体管

SI7970DP-T1-E3 规格参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-C6Reach Compliance Code：compliant
风险等级：5.81Is Samacsys：N
外壳连接：DRAIN配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：6.5 A
最大漏极电流 (ID)：6.5 A最大漏源导通电阻：0.019 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-C6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：3.5 W子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI7970DP-T1-E3 数据手册

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Si7970DP  
Vishay Siliconix  
New Product  
Dual N-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
ꢀ
T
r
e
n
c
h
F
E
T
ꢁ
P
o
w
e
r
M
O
S
F
E
T
ꢀ New Low Thermal Resistance PowerPAK  
ꢀ Dual MOSFET for Space Savings  
ꢀ 100% Rg Tested  
ꢁ
Package  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.019 @ V = 10 V  
10.2  
8.7  
GS  
40  
0.026 @ V = 4.5 V  
GS  
APPLICATIONS  
ꢀ Primary Side Switch  
− Low Power Quarter Buck  
ꢀ Intermediate BUS Switch  
PowerPAK SO-8  
D
1
D
2
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
3
G2  
4
D1  
G
1
G
2
8
D1  
7
D2  
6
D2  
5
S
1
S
Bottom View  
Ordering Information: Si7970DP-T1—E3  
2
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25ꢂ C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
40  
DS  
GS  
V
V
"20  
T
= 25ꢂC  
= 70ꢂC  
10.2  
8.2  
6.5  
5.2  
A
a
Continuous Drain Current (T = 150ꢂC)  
I
D
J
T
A
Pulsed Drain Current  
I
40  
A
DM  
a
Continuous Source Current (Diode Conduction)  
Single Avalanche Current  
I
2.9  
1.2  
S
L = 0.1 mH  
I
AS  
30  
45  
Single Avalanche Energy  
E
mJ  
AS  
T
= 25ꢂC  
= 70ꢂC  
3.5  
2.2  
1.4  
0.9  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
−55 to 150  
ꢂ
C
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
26  
60  
35  
85  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
ꢂ
C
/
W
Maximum Junction-to-Case (Drain)  
2.2  
2.7  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72826  
S-40431—Rev. A, 15-Mar-04  
www.vishay.com  
1
Si7970DP  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25ꢂ C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1
3
"100  
1
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= 40 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 40 V, V = 0 V, T = 55ꢂC  
5
DS  
GS  
J
a
On-State Drain Current  
I
30  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.016  
0.019  
0.026  
V
V
= 10 V, I = 10.2 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
= 4.5 V, I = 8.7 A  
0.021  
26  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 10.2 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
I
S
= 2.9 A, V = 0 V  
0.8  
1.2  
35  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
23  
4.4  
5.6  
2.3  
15  
15  
50  
16  
30  
Q
gs  
Q
gd  
V
=20 V, V = 10 V, I = 10.2 A  
nC  
DS  
GS  
D
f = 1 MHz  
R
g
1
3.9  
25  
25  
75  
25  
60  
W
t
d(on)  
t
r
V
= 20 V, R = 20 W  
L
DD  
I
^ 1 A, V  
= 10 V, R = 6 W  
GEN g  
D
Turn-Off Delay Time  
Fall Time  
t
d(off)  
ns  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 2.9 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
40  
40  
32  
24  
16  
8
V
= 10 thru 6 V  
GS  
32  
24  
16  
8
5 V  
T
C
= 125ꢂC  
25ꢂC  
4 V  
−55ꢂC  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
− Drain-to-Source Voltage (V)  
V
− Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 72826  
S-40431—Rev. A, 15-Mar-04  
www.vishay.com  
2
Si7970DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.05  
2000  
1600  
1200  
800  
400  
0
0.04  
0.03  
C
iss  
V
= 4.5 V  
GS  
V
= 10 V  
0.02  
0.01  
0.00  
GS  
C
oss  
C
rss  
0
8
16  
24  
32  
40  
25  
1.2  
0
10  
20  
30  
40  
I
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
D
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 20 V  
= 10.2 A  
V
D
= 10 V  
GS  
I = 10.2 A  
DS  
I
6
4
2
0
0
5
10  
15  
20  
−50 −25  
0
25  
50  
75  
100 125 150  
Q
g
− Total Gate Charge (nC)  
T
J
− Junction Temperature (ꢂC)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
40  
10  
T = 150ꢂC  
J
I
= 10.2 A  
D
T = 25ꢂC  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
V
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
SD  
Document Number: 72826  
S-40431—Rev. A, 15-Mar-04  
www.vishay.com  
3
Si7970DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.4  
100  
80  
0.2  
−0.0  
−0.2  
−0.4  
−0.6  
−0.8  
−1.0  
−1.2  
I
D
= 250 mA  
60  
40  
20  
0
−50 −25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
10  
100  
600  
1
T
J
− Temperature (ꢂC)  
Time (sec)  
Safe Operating Area, Junction-To-Ambient  
I
100  
DM  
Limited  
r
Limited  
DS(on)  
P(t) = 0.0001  
10  
1
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
T
= 25ꢂC  
A
P(t) = 10  
0.1  
Single Pulse  
dc  
BV  
DSS  
Limited  
10  
0.01  
0.1  
1
100  
V
− Drain-to-Source Voltage (V)  
DS  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 60ꢂ C/W  
thJA  
(t)  
3. T − T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72826  
S-40431—Rev. A, 15-Mar-04  
www.vishay.com  
4
Si7970DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72826  
S-40431—Rev. A, 15-Mar-04  
www.vishay.com  
5

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