SI7971DP-T1-E3
更新时间：2024-10-13 15:08:26
品牌：VISHAY
描述：TRANSISTOR 7.5 A, 12 V, 0.018 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power
概述
规格参数
数据手册SI7971DP-T1-E3 概述
TRANSISTOR 7.5 A, 12 V, 0.018 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power 功率场效应晶体管
SI7971DP-T1-E3 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 零件包装代码： | SOT |
| 包装说明： | SMALL OUTLINE, R-XDSO-C6 | 针数： | 8 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.84 | 外壳连接： | DRAIN |
| 配置： | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压： | 12 V |
| 最大漏极电流 (Abs) (ID)： | 7.5 A | 最大漏极电流 (ID)： | 7.5 A |
| 最大漏源导通电阻： | 0.018 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-XDSO-C6 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 2 |
| 端子数量： | 6 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | UNSPECIFIED |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | P-CHANNEL |
| 最大功率耗散 (Abs)： | 3.5 W | 最大脉冲漏极电流 (IDM)： | 30 A |
| 认证状态： | Not Qualified | 子类别： | Other Transistors |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | C BEND | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | 40 | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SI7971DP-T1-E3 数据手册
通过下载SI7971DP-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Si7971DP
Vishay Siliconix
New Product
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
ID (A)
– 11.7
– 10.6
– 3.5
Pb-free
•
New Low Thermal Resistance
PowerPAK® Package with
Low 1.07-mm Profile
Available
0.018 at VGS = – 4.5 V
0.022 at VGS = – 2.5 V
0.029 at VGS = – 1.8 V
RoHS*
– 12
COMPLIANT
APPLICATIONS
Load Switch
•
PowerPAK SO-8
S1
5.15 mm
6.15 mm
1
G1
2
S2
S
1
S
2
3
G2
4
D1
8
G
G
2
D1
1
7
D2
6
D2
5
Bottom View
Ordering Information: Si7971DP-T1
Si7971DP-T1—E3 (Lead (Pb)-free)
D
D
2
1
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
– 12
8
V
TA = 25 °C
TA = 70 °C
– 11.7
– 9.4
– 7.5
– 6.0
Continuous Drain Current (TJ = 150 °C)a
ID
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IDM
IS
– 30
– 2.9
3.5
– 1.2
1.4
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 70 °C
2.2
0.9
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TJ, Tstg
– 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
Maximum
Unit
t ≤ 10 sec
Steady State
Steady State
26
60
3
35
85
Maximum Junction-to-Ambienta
°C/W
Maximum Junction-to-Case (Drain)
RthJC
3.7
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72357
S-52555-Rev. B, 19-Dec-05
www.vishay.com
1
Si7971DP
Vishay Siliconix
New Product
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = – 450 µA
– 0.40
– 1.0
100
– 1
V
VDS = 0 V, VGS
=
8 V
nA
VDS = – 12 V, VGS = 0 V
DS = – 12 V, VGS = 0 V, TJ = 55 °C
VDS ≤ – 5 V, VGS = – 4.5 V
VGS = – 4.5 V, ID = – 11.7 A
VGS = – 2.5 V, ID = – 10.6 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
– 5
ID(on)
– 30
0.014
0.018
0.023
37
0.018
0.022
0.029
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = – 1.8 V, ID = – 3.5 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = – 15 V, ID = – 11.7 A
IS = – 2.9 A, VGS = 0 V
S
V
VSD
– 0.7
– 1.2
60
Total Gate Charge
Qg
Qgs
Qgd
Rg
39
6.5
10
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
VDS = – 6 V, VGS = – 4.5 V, ID = – 11.7 A
nC
9.4
38
Ω
td(on)
tr
td(off)
tf
60
90
60
V
DD = – 6 V, RL = 6 Ω
ID ≅ – 1 A, VGEN = – 4.5 V, RG = 6 Ω
Turn-Off Delay Time
Fall Time
280
210
120
420
320
180
ns
Source-Drain Reverse Recovery Time
trr
IF = – 2.9 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless noted
30
24
18
12
6
30
24
18
12
6
V
GS
= 10 thru 2 V
1.5 V
1 V
T
= 125 °C
C
25 °C
- 55 °C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
2.0
2.5
V
- Drain-to-Source Voltage (V)
DS
V
GS
-
Output Characteristics
www.vishay.com
2
Document Number: 72357
S-52555-Rev. B, 19-Dec-05
Si7971DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
5000
4000
3000
2000
1000
0
0.06
0.05
0.04
0.03
0.02
0.01
0.00
C
iss
V
GS
= 1.8 V
V
V
= 2.5 V
= 4.5 V
GS
C
oss
C
rss
GS
0
2
4
-
6
8
10
12
0
6
12
18
24
30
V
DS
Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 6 V
V
I
= 4.5 V
DS
= 11.7 A
GS
I
= 11.7 A
D
0
10
Q
20
30
40
50
- 50 - 25
0
25
50
75
100 125 150
-
Total Gate Charge (nC)
T
- Junction Temperature (°C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
T
= 150 °C
J
I
D
= 11.7 A
I
D
= 3.5 A
T
= 25 °C
J
1
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72357
S-52555-Rev. B, 19-Dec-05
www.vishay.com
3
Si7971DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.4
30
24
18
0.3
I
D
= 450 μA
0.2
0.1
12
6
0.0
- 0.1
- 0.2
0
- 50 - 25
0
25
50
75
100 125 150
0.001 0.01
0.1
1
10
100
1000
T
- Temperature (°C)
Time (sec)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
r
Limited
I
Limited
DS(on)
DM
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
T
= 25 °C
A
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 60 °C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72357
S-52555-Rev. B, 19-Dec-05
Si7971DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72357.
Document Number: 72357
S-52555-Rev. B, 19-Dec-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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