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SI7971DP-T1-E3

更新时间：2025-07-10 15:08:26
品牌：VISHAY
描述：TRANSISTOR 7.5 A, 12 V, 0.018 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power

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SI7971DP-T1-E3 概述

TRANSISTOR 7.5 A, 12 V, 0.018 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power 功率场效应晶体管

SI7971DP-T1-E3 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOT
包装说明：SMALL OUTLINE, R-XDSO-C6针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84外壳连接：DRAIN
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：12 V
最大漏极电流 (Abs) (ID)：7.5 A最大漏极电流 (ID)：7.5 A
最大漏源导通电阻：0.018 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XDSO-C6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：3.5 W最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SI7971DP-T1-E3 数据手册

通过下载SI7971DP-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7971DP  
Vishay Siliconix  
New Product  
Dual P-Channel 12-V (D-S) MOSFET  
FEATURES  
•
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
rDS(on) (Ω)  
ID (A)  
– 11.7  
– 10.6  
– 3.5  
Pb-free  
•
New Low Thermal Resistance  
PowerPAK® Package with  
Low 1.07-mm Profile  
Available  
0.018 at VGS = – 4.5 V  
0.022 at VGS = – 2.5 V  
0.029 at VGS = – 1.8 V  
RoHS*  
– 12  
COMPLIANT  
APPLICATIONS  
Load Switch  
•
PowerPAK SO-8  
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
S
1
S
2
3
G2  
4
D1  
8
G
G
2
D1  
1
7
D2  
6
D2  
5
Bottom View  
Ordering Information: Si7971DP-T1  
Si7971DP-T1—E3 (Lead (Pb)-free)  
D
D
2
1
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
– 12  
8
V
TA = 25 °C  
TA = 70 °C  
– 11.7  
– 9.4  
– 7.5  
– 6.0  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
IDM  
IS  
– 30  
– 2.9  
3.5  
– 1.2  
1.4  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
2.2  
0.9  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b,c  
TJ, Tstg  
– 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t ≤ 10 sec  
Steady State  
Steady State  
26  
60  
3
35  
85  
Maximum Junction-to-Ambienta  
°C/W  
Maximum Junction-to-Case (Drain)  
RthJC  
3.7  
Notes  
a. Surface Mounted on 1" x 1" FR4 Board.  
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is  
not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 72357  
S-52555-Rev. B, 19-Dec-05  
www.vishay.com  
1
Si7971DP  
Vishay Siliconix  
New Product  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
VGS(th)  
IGSS  
VDS = VGS, ID = – 450 µA  
– 0.40  
– 1.0  
100  
– 1  
V
VDS = 0 V, VGS  
=
8 V  
nA  
VDS = – 12 V, VGS = 0 V  
DS = – 12 V, VGS = 0 V, TJ = 55 °C  
VDS ≤ – 5 V, VGS = – 4.5 V  
VGS = – 4.5 V, ID = – 11.7 A  
VGS = – 2.5 V, ID = – 10.6 A  
IDSS  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
– 5  
ID(on)  
– 30  
0.014  
0.018  
0.023  
37  
0.018  
0.022  
0.029  
Drain-Source On-State Resistancea  
rDS(on)  
Ω
V
GS = – 1.8 V, ID = – 3.5 A  
Forward Transconductancea  
Diode Forward Voltagea  
Dynamicb  
gfs  
VDS = – 15 V, ID = – 11.7 A  
IS = – 2.9 A, VGS = 0 V  
S
V
VSD  
– 0.7  
– 1.2  
60  
Total Gate Charge  
Qg  
Qgs  
Qgd  
Rg  
39  
6.5  
10  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
VDS = – 6 V, VGS = – 4.5 V, ID = – 11.7 A  
nC  
9.4  
38  
Ω
td(on)  
tr  
td(off)  
tf  
60  
90  
60  
V
DD = – 6 V, RL = 6 Ω  
ID ≅ – 1 A, VGEN = – 4.5 V, RG = 6 Ω  
Turn-Off Delay Time  
Fall Time  
280  
210  
120  
420  
320  
180  
ns  
Source-Drain Reverse Recovery Time  
trr  
IF = – 2.9 A, di/dt = 100 A/µs  
Notes  
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS 25 °C, unless noted  
30  
24  
18  
12  
6
30  
24  
18  
12  
6
V
GS  
= 10 thru 2 V  
1.5 V  
1 V  
T
= 125 °C  
C
25 °C  
- 55 °C  
0
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
Gate-to-Source Voltage (V)  
Transfer Characteristics  
1.5  
2.0  
2.5  
V
- Drain-to-Source Voltage (V)  
DS  
V
GS  
-
Output Characteristics  
www.vishay.com  
2
Document Number: 72357  
S-52555-Rev. B, 19-Dec-05  
Si7971DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS 25 °C, unless noted  
5000  
4000  
3000  
2000  
1000  
0
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
C
iss  
V
GS  
= 1.8 V  
V
V
= 2.5 V  
= 4.5 V  
GS  
C
oss  
C
rss  
GS  
0
2
4
-
6
8
10  
12  
0
6
12  
18  
24  
30  
V
DS  
Drain-to-Source Voltage (V)  
I
D
- Drain Current (A)  
On-Resistance vs. Drain Current  
Capacitance  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 6 V  
V
I
= 4.5 V  
DS  
= 11.7 A  
GS  
I
= 11.7 A  
D
0
10  
Q
20  
30  
40  
50  
- 50 - 25  
0
25  
50  
75  
100 125 150  
-
Total Gate Charge (nC)  
T
- Junction Temperature (°C)  
g
J
Gate Charge  
On-Resistance vs. Junction Temperature  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
30  
10  
T
= 150 °C  
J
I
D
= 11.7 A  
I
D
= 3.5 A  
T
= 25 °C  
J
1
0
1
2
3
4
5
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
GS  
- Gate-to-Source Voltage (V)  
V
SD  
- Source-to-Drain Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Document Number: 72357  
S-52555-Rev. B, 19-Dec-05  
www.vishay.com  
3
Si7971DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS 25 °C, unless noted  
0.4  
30  
24  
18  
0.3  
I
D
= 450 μA  
0.2  
0.1  
12  
6
0.0  
- 0.1  
- 0.2  
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.001 0.01  
0.1  
1
10  
100  
1000  
T
- Temperature (°C)  
Time (sec)  
J
Single Pulse Power, Junction-to-Ambient  
Threshold Voltage  
100  
r
Limited  
I
Limited  
DS(on)  
DM  
10  
1
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
P(t) = 10  
dc  
T
= 25 °C  
A
0.1  
Single Pulse  
BV  
DSS  
Limited  
0.01  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
Safe Operating Area  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 60 °C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
www.vishay.com  
4
Document Number: 72357  
S-52555-Rev. B, 19-Dec-05  
Si7971DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS 25 °C, unless noted  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.02  
0.05  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
10  
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?72357.  
Document Number: 72357  
S-52555-Rev. B, 19-Dec-05  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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