Si7972DP

更新时间:2024-11-09 08:25:29
品牌:VISHAY
描述:Dual N-Channel 60 V (D-S) MOSFET

Si7972DP 概述

Dual N-Channel 60 V (D-S) MOSFET

Si7972DP 数据手册

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Si7972DP  
Vishay Siliconix  
www.vishay.com  
Dual N-Channel 60 V (D-S) MOSFET  
FEATURES  
• TrenchFET® power MOSFET  
PowerPAK® SO-8 Dual  
D1  
D1  
7
8
• PWM optimized  
D2  
6
D2  
5
• 100 % Rg and UIS tested  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
1
2
G1  
S1  
APPLICATIONS  
3
S2  
1
4
• System power DC/DC  
G2  
D
1
D
2
Top View  
Bottom View  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) max. (Ω) at VGS = 10 V  
60  
0.018  
0.021  
7.1  
8 a  
Dual  
G
G
2
1
R
DS(on) max. (Ω) at VGS = 4.5 V  
Qg typ. (nC)  
D (A)  
Configuration  
I
N-Channel MOSFET  
N-Channel MOSFET  
S
1
S
2
ORDERING INFORMATION  
Package  
PowerPAK SO-8  
Si7972DP-T1-GE3  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
60  
20  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
T
T
C = 25 °C  
C = 70 °C  
8 a  
8 a  
8 a  
8 a  
40  
Continuous drain current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed drain current  
IDM  
IS  
T
C = 25 °C  
19  
3 b, c  
Source-drain current diode current  
TA = 25 °C  
T
T
C = 25 °C  
C = 70 °C  
22  
14  
Maximum power dissipation  
PD  
W
TA = 25 °C  
TA = 70 °C  
3.6 b, c  
2.3 b, c  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b, f  
SYMBOL  
RthJA  
TYP.  
MAX.  
35  
UNIT  
t 10 s  
Steady state  
26  
4
°C/W  
Maximum junction-to-case (drain)  
RthJC  
5.5  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 80 °C/W  
S21-0760-Rev. C, 12-Jul-2021  
Document Number: 75360  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si7972DP  
Vishay Siliconix  
www.vishay.com  
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Static  
Drain-source breakdown voltage  
VDS  
ΔVDS/TJ  
ΔVGS(th)/TJ  
VGS(th)  
VGS = 0 V, ID = 250 μA  
ID = 250 μA  
60  
-
-
-
V
VDS temperature coefficient  
38  
-
-
mV/°C  
VGS(th) temperature coefficient  
Gate threshold voltage  
Gate-body leakage  
ID = 250 μA  
-
-4.9  
VDS = VGS, ID = 250 μA  
1.2  
-
-
2.7  
100  
1
V
IGSS  
VDS = 0 V, VGS  
=
20 V  
-
nA  
VDS = 60 V, VGS = 0 V  
VDS = 60 V, VGS = 0 V, TJ = 85 °C  
VDS 5 V, VGS = 10 V  
-
-
-
Zero gate voltage drain current  
On-state drain current b  
IDSS  
ID(on)  
RDS(on)  
gfs  
μA  
A
-
10  
30  
-
-
-
VGS = 10 V, ID = 11 A  
0.015  
0.017  
38  
0.018  
0.021  
-
Drain-source on-state resistance b  
Ω
S
VGS = 4.5 V, ID = 10 A  
-
Forward transconductance b  
Dynamic a  
VDS = 30 V, ID = 11 A  
-
Input capacitance  
Ciss  
Coss  
Crss  
-
1050  
435  
20  
-
-
Output capacitance  
Reverse transfer capacitance  
VDS = 30 V, VGS = 0 V, f = 1 MHz  
VDS = 30 V, VGS = 10 V, ID = 11 A  
VDS = 30 V, VGS = 4.5 V, ID = 11 A  
f = 1 MHz  
-
pF  
-
-
-
15.2  
7.1  
4.4  
1.3  
0.6  
15  
23  
11  
-
Total gate charge  
Qg  
-
nC  
Gate-source charge  
Qgs  
Qgd  
Rg  
-
Gate-drain charge  
-
-
Gate resistance  
0.12  
1.2  
120  
30  
30  
30  
15  
40  
30  
15  
Ω
Turn-on delay time  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
-
Rise time  
80  
VDD = 30 V, RL = 3.45 Ω  
ID 8.7 A, VGEN = 4.5 V, Rg = 1 Ω  
Turn-off delay time  
15  
Fall time  
15  
ns  
Turn-on delay time  
10  
Rise time  
25  
VDD = 30 V, RL = 3.45 Ω  
ID 8.7 A, VGEN = 10 V, Rg = 1 Ω  
Turn-off delay time  
20  
Fall time  
10  
Drain-Source Body Diode Characteristics  
Continuous source-drain diode Current  
Pulse diode forward current a  
Body diode voltage  
IS  
ISM  
VSD  
trr  
TC = 25 °C  
IS = 8.7 A  
-
-
-
-
-
-
-
-
8
40  
1.2  
51  
45  
-
A
-
0.8  
34  
30  
16  
18  
V
Body diode reverse recovery time  
Body diode reverse recovery charge  
Reverse recovery fall time  
Reverse recovery rise time  
ns  
nC  
Qrr  
ta  
IF = 8.7 A, di/dt = 100 A/μs,  
TJ = 25 °C  
ns  
tb  
-
Notes  
a. Guaranteed by design, not subject to production testing  
b. Pulse test; pulse width 300 μs, duty cycle 2 %  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
S21-0760-Rev. C, 12-Jul-2021  
Document Number: 75360  
2
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si7972DP  
Vishay Siliconix  
www.vishay.com  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
Axis Title  
Axis Title  
40  
30  
20  
10  
0
10000  
1000  
100  
10000  
VGS = 10 V thru 4 V  
60  
45  
30  
15  
0
TC = 125 °C  
1000  
100  
10  
TC = 25 °C  
VGS = 3 V  
TC = -55 °C  
10  
0
0.5  
1
1.5  
2
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)  
2nd line  
VGS - Gate-to-Source Voltage (V)  
2nd line  
Output Characteristics  
Transfer Characteristics  
Axis Title  
Axis Title  
0.03  
0.025  
0.02  
0.015  
0.01  
0.005  
0
10000  
1000  
100  
1500  
1200  
900  
600  
300  
0
10000  
1000  
100  
Ciss  
VGS = 4.5 V  
VGS = 10 V  
Coss  
Crss  
10  
10  
0
10  
20  
30  
40  
0
10  
20  
30  
40  
50  
60  
ID - Drain Current (A)  
2nd line  
VDS - Drain-to-Source Voltage (V)  
2nd line  
On-Resistance vs. Drain Current  
Capacitance  
Axis Title  
Axis Title  
10  
8
10000  
1000  
100  
1.7  
1.5  
1.3  
1.1  
0.9  
0.7  
10000  
1000  
100  
VGS = 10 V, ID = 11 A  
VDS = 15 V  
ID = 11.3 A  
VDS = 30 V  
6
VDS = 48 V  
4
2
VGS = 4.5 V, ID = 10 A  
0
10  
10  
0
5
10  
15  
20  
-50 -25  
0
25  
50  
75 100 125 150  
Qg - Total Gate Charge (nC)  
2nd line  
TJ - Junction Temperature (°C)  
2nd line  
Gate Charge  
On-Resistance vs. Junction Temperature  
S21-0760-Rev. C, 12-Jul-2021  
Document Number: 75360  
3
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si7972DP  
Vishay Siliconix  
www.vishay.com  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
Axis Title  
Axis Title  
100  
10  
10000  
1000  
100  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
10000  
TJ = 150 °C  
1000  
1
TJ = 150 °C  
TJ = 25 °C  
0.1  
100  
TJ = 25 °C  
0.01  
0.001  
10  
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
VSD - Source-to-Drain Voltage (V)  
2nd line  
VGS - Gate-to-Source Voltage (V)  
2nd line  
Source-Drain Diode Forward Voltage  
On-Resi.0stance vs. Gate-to-Source Voltage  
Axis Title  
40  
2.3  
2.1  
1.9  
1.7  
1.5  
1.3  
10000  
1000  
100  
ID = 250 μA  
32  
24  
16  
8
0
10  
0.001 0.01  
0.1  
1
10  
100  
1000  
-50 -25  
0
25  
50  
75 100 125 150  
Time (s)  
TJ - Temperature (°C)  
2nd line  
Threshold Voltage  
Single Pulse Power  
Axis Title  
100  
10  
10000  
IDM limited  
ID limited  
100 μs  
1000  
1 ms  
1
10 ms  
(1)  
Limited by RDS(on)  
100 ms  
0  
0.1  
0.01  
DC, 10 s, 1 s  
BVDSS limited  
TA = 25 °C  
Single pulse  
10  
0.1  
1
10  
VDS - Drain-to-Source Voltage (V)  
> minimum VGS at which RDS(on) is specified  
100  
(1)  
V
GS  
Safe Operating Area, Junction-to-Ambient  
S21-0760-Rev. C, 12-Jul-2021  
Document Number: 75360  
4
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si7972DP  
Vishay Siliconix  
www.vishay.com  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
Axis Title  
32  
10000  
1000  
100  
24  
16  
Package limited  
8
0
10  
0
25  
50  
75  
100  
125  
150  
TC - Case Temperature (°C)  
2nd line  
Current Derating a  
Axis Title  
Axis Title  
28  
21  
14  
7
10000  
1000  
100  
2.0  
1.5  
1.0  
0.5  
0
10000  
1000  
100  
0
10  
10  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
TC - Case Temperature (°C)  
2nd line  
TA - Ambient Temperature (°C)  
2nd line  
Power, Junction-to-Case  
Power, Junction-to-Ambient  
Note  
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the  
package limit  
S21-0760-Rev. C, 12-Jul-2021  
Document Number: 75360  
5
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si7972DP  
Vishay Siliconix  
www.vishay.com  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
1
Duty cycle = 0.5  
0.2  
0.1  
0.1  
Notes:  
P
DM  
0.05  
t
1
t
0.02  
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 80 °C/W  
thJA  
(t)  
3. T - T = P  
Z
Single pulse  
0.01  
JM  
A
DM thJA  
4. Surface Mounted  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
100  
1000  
10  
1
Duty cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?75360.  
S21-0760-Rev. C, 12-Jul-2021  
Document Number: 75360  
6
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Package Information  
www.vishay.com  
Vishay Siliconix  
PowerPAK® SO-8, (Single/Dual)  
L
H
E2  
K
E4  
W
1
1
2
3
4
Z
2
3
4
D
L1  
E3  
A1  
Backside View of Single Pad  
L
H
K
E2  
E4  
2
E1  
E
Detail Z  
1
2
3
4
D1  
D2  
Notes  
1. Inch will govern.  
E3  
2
Dimensions exclusive of mold gate burrs.  
Backside View of Dual Pad  
3. Dimensions exclusive of mold flash and cutting burrs.  
MILLIMETERS  
INCHES  
NOM.  
0.041  
DIM.  
MIN.  
NOM.  
1.04  
MAX.  
1.12  
0.05  
0.51  
0.33  
5.26  
5.00  
3.91  
1.68  
MIN.  
0.038  
0
MAX.  
0.044  
0.002  
0.020  
0.013  
0.207  
0.197  
0.154  
0.066  
A
A1  
b
0.97  
-
-
0.33  
0.23  
5.05  
4.80  
3.56  
1.32  
0.41  
0.013  
0.009  
0.199  
0.189  
0.140  
0.052  
0.016  
c
0.28  
0.011  
D
5.15  
0.203  
D1  
D2  
D3  
D4  
D5  
E
4.90  
0.193  
3.76  
0.148  
1.50  
0.059  
0.57 typ.  
3.98 typ.  
6.15  
0.0225 typ.  
0.157 typ.  
0.242  
6.05  
5.79  
3.48  
3.68  
6.25  
5.99  
3.84  
3.91  
0.238  
0.228  
0.137  
0.145  
0.246  
0.236  
0.151  
0.154  
E1  
E2  
E3  
E4  
e
5.89  
0.232  
3.66  
0.144  
3.78  
0.149  
0.75 typ.  
1.27 BSC  
1.27 typ.  
-
0.030 typ.  
0.050 BSC  
0.050 typ.  
-
K
K1  
H
0.56  
0.51  
0.51  
0.06  
0°  
-
0.022  
0.020  
0.020  
0.002  
0°  
-
0.61  
0.71  
0.71  
0.20  
12°  
0.024  
0.028  
0.028  
0.008  
12°  
L
0.61  
0.024  
L1  
0.13  
0.005  
-
-
W
M
0.15  
0.25  
0.36  
0.006  
0.010  
0.014  
0.125 typ.  
0.005 typ.  
ECN: S17-0173-Rev. L, 13-Feb-17  
DWG: 5881  
Revison: 13-Feb-17  
Document Number: 71655  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Application Note 826  
Vishay Siliconix  
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single  
0.260  
(6.61)  
0.150  
(3.81)  
0.024  
(0.61)  
0.026  
(0.66)  
0.050  
(1.27)  
0.032  
(0.82)  
0.040  
(1.02)  
Recommended Minimum Pads  
Dimensions in Inches/(mm)  
Return to Index  
Document Number: 72599  
Revision: 21-Jan-08  
www.vishay.com  
15  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product  
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in  
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating  
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.  
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited  
to the warranty expressed therein.  
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and  
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of  
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.  
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website  
or for that of subsequent links.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 01-Jan-2023  
Document Number: 91000  
1

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SI7981DP-T1-E3 VISHAY TRANSISTOR 7 A, 20 V, 0.02 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPACK, SOP-8, FET General Purpose Power 获取价格
SI7983DP VISHAY Dual P-Channel 20-V (D-S) MOSFET 获取价格
SI7983DP-T1-E3 VISHAY Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, 获取价格
SI7991DP VISHAY Dual P-Channel 30-V (D-S) MOSFET 获取价格
SI7991DP-T1 VISHAY Dual P-Channel 30-V (D-S) MOSFET 获取价格

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