Si7972DP 概述
Dual N-Channel 60 V (D-S) MOSFET
Si7972DP 数据手册
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Vishay Siliconix
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Dual N-Channel 60 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
PowerPAK® SO-8 Dual
D1
D1
7
8
• PWM optimized
D2
6
D2
5
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
2
G1
S1
APPLICATIONS
3
S2
1
4
• System power DC/DC
G2
D
1
D
2
Top View
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
60
0.018
0.021
7.1
8 a
Dual
G
G
2
1
R
DS(on) max. (Ω) at VGS = 4.5 V
Qg typ. (nC)
D (A)
Configuration
I
N-Channel MOSFET
N-Channel MOSFET
S
1
S
2
ORDERING INFORMATION
Package
PowerPAK SO-8
Si7972DP-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
60
20
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
T
T
C = 25 °C
C = 70 °C
8 a
8 a
8 a
8 a
40
Continuous drain current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
Pulsed drain current
IDM
IS
T
C = 25 °C
19
3 b, c
Source-drain current diode current
TA = 25 °C
T
T
C = 25 °C
C = 70 °C
22
14
Maximum power dissipation
PD
W
TA = 25 °C
TA = 70 °C
3.6 b, c
2.3 b, c
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
-55 to +150
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, f
SYMBOL
RthJA
TYP.
MAX.
35
UNIT
t ≤ 10 s
Steady state
26
4
°C/W
Maximum junction-to-case (drain)
RthJC
5.5
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 80 °C/W
S21-0760-Rev. C, 12-Jul-2021
Document Number: 75360
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7972DP
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
ID = 250 μA
60
-
-
-
V
VDS temperature coefficient
38
-
-
mV/°C
VGS(th) temperature coefficient
Gate threshold voltage
Gate-body leakage
ID = 250 μA
-
-4.9
VDS = VGS, ID = 250 μA
1.2
-
-
2.7
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
-
nA
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 85 °C
VDS ≥ 5 V, VGS = 10 V
-
-
-
Zero gate voltage drain current
On-state drain current b
IDSS
ID(on)
RDS(on)
gfs
μA
A
-
10
30
-
-
-
VGS = 10 V, ID = 11 A
0.015
0.017
38
0.018
0.021
-
Drain-source on-state resistance b
Ω
S
VGS = 4.5 V, ID = 10 A
-
Forward transconductance b
Dynamic a
VDS = 30 V, ID = 11 A
-
Input capacitance
Ciss
Coss
Crss
-
1050
435
20
-
-
Output capacitance
Reverse transfer capacitance
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 11 A
VDS = 30 V, VGS = 4.5 V, ID = 11 A
f = 1 MHz
-
pF
-
-
-
15.2
7.1
4.4
1.3
0.6
15
23
11
-
Total gate charge
Qg
-
nC
Gate-source charge
Qgs
Qgd
Rg
-
Gate-drain charge
-
-
Gate resistance
0.12
1.2
120
30
30
30
15
40
30
15
Ω
Turn-on delay time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
Rise time
80
VDD = 30 V, RL = 3.45 Ω
ID ≅ 8.7 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-off delay time
15
Fall time
15
ns
Turn-on delay time
10
Rise time
25
VDD = 30 V, RL = 3.45 Ω
ID ≅ 8.7 A, VGEN = 10 V, Rg = 1 Ω
Turn-off delay time
20
Fall time
10
Drain-Source Body Diode Characteristics
Continuous source-drain diode Current
Pulse diode forward current a
Body diode voltage
IS
ISM
VSD
trr
TC = 25 °C
IS = 8.7 A
-
-
-
-
-
-
-
-
8
40
1.2
51
45
-
A
-
0.8
34
30
16
18
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Qrr
ta
IF = 8.7 A, di/dt = 100 A/μs,
TJ = 25 °C
ns
tb
-
Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0760-Rev. C, 12-Jul-2021
Document Number: 75360
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7972DP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
40
30
20
10
0
10000
1000
100
10000
VGS = 10 V thru 4 V
60
45
30
15
0
TC = 125 °C
1000
100
10
TC = 25 °C
VGS = 3 V
TC = -55 °C
10
0
0.5
1
1.5
2
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.03
0.025
0.02
0.015
0.01
0.005
0
10000
1000
100
1500
1200
900
600
300
0
10000
1000
100
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
10
10
0
10
20
30
40
0
10
20
30
40
50
60
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
1.7
1.5
1.3
1.1
0.9
0.7
10000
1000
100
VGS = 10 V, ID = 11 A
VDS = 15 V
ID = 11.3 A
VDS = 30 V
6
VDS = 48 V
4
2
VGS = 4.5 V, ID = 10 A
0
10
10
0
5
10
15
20
-50 -25
0
25
50
75 100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S21-0760-Rev. C, 12-Jul-2021
Document Number: 75360
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7972DP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
10000
1000
100
0.06
0.05
0.04
0.03
0.02
0.01
0
10000
TJ = 150 °C
1000
1
TJ = 150 °C
TJ = 25 °C
0.1
100
TJ = 25 °C
0.01
0.001
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resi.0stance vs. Gate-to-Source Voltage
Axis Title
40
2.3
2.1
1.9
1.7
1.5
1.3
10000
1000
100
ID = 250 μA
32
24
16
8
0
10
0.001 0.01
0.1
1
10
100
1000
-50 -25
0
25
50
75 100 125 150
Time (s)
TJ - Temperature (°C)
2nd line
Threshold Voltage
Single Pulse Power
Axis Title
100
10
10000
IDM limited
ID limited
100 μs
1000
1 ms
1
10 ms
(1)
Limited by RDS(on)
100 ms
0
0.1
0.01
DC, 10 s, 1 s
BVDSS limited
TA = 25 °C
Single pulse
10
0.1
1
10
VDS - Drain-to-Source Voltage (V)
> minimum VGS at which RDS(on) is specified
100
(1)
V
GS
Safe Operating Area, Junction-to-Ambient
S21-0760-Rev. C, 12-Jul-2021
Document Number: 75360
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7972DP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
32
10000
1000
100
24
16
Package limited
8
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
28
21
14
7
10000
1000
100
2.0
1.5
1.0
0.5
0
10000
1000
100
0
10
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S21-0760-Rev. C, 12-Jul-2021
Document Number: 75360
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7972DP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
0.02
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80 °C/W
thJA
(t)
3. T - T = P
Z
Single pulse
0.01
JM
A
DM thJA
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75360.
S21-0760-Rev. C, 12-Jul-2021
Document Number: 75360
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
W
1
1
2
3
4
Z
2
3
4
D
L1
E3
A1
Backside View of Single Pad
L
H
K
E2
E4
2
E1
E
Detail Z
1
2
3
4
D1
D2
Notes
1. Inch will govern.
E3
2
Dimensions exclusive of mold gate burrs.
Backside View of Dual Pad
3. Dimensions exclusive of mold flash and cutting burrs.
MILLIMETERS
INCHES
NOM.
0.041
DIM.
MIN.
NOM.
1.04
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
MIN.
0.038
0
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
A
A1
b
0.97
-
-
0.33
0.23
5.05
4.80
3.56
1.32
0.41
0.013
0.009
0.199
0.189
0.140
0.052
0.016
c
0.28
0.011
D
5.15
0.203
D1
D2
D3
D4
D5
E
4.90
0.193
3.76
0.148
1.50
0.059
0.57 typ.
3.98 typ.
6.15
0.0225 typ.
0.157 typ.
0.242
6.05
5.79
3.48
3.68
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.246
0.236
0.151
0.154
E1
E2
E3
E4
e
5.89
0.232
3.66
0.144
3.78
0.149
0.75 typ.
1.27 BSC
1.27 typ.
-
0.030 typ.
0.050 BSC
0.050 typ.
-
K
K1
H
0.56
0.51
0.51
0.06
0°
-
0.022
0.020
0.020
0.002
0°
-
0.61
0.71
0.71
0.20
12°
0.024
0.028
0.028
0.008
12°
L
0.61
0.024
L1
0.13
0.005
-
-
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 typ.
0.005 typ.
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
Revison: 13-Feb-17
Document Number: 71655
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.024
(0.61)
0.026
(0.66)
0.050
(1.27)
0.032
(0.82)
0.040
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
1
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