首页 |元器件品牌 | PCB在线计价/下单
首页 > SI7981DP-T1-E3

SI7981DP-T1-E3

更新时间：2024-11-30 18:21:26
品牌：VISHAY
描述：TRANSISTOR 7 A, 20 V, 0.02 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPACK, SOP-8, FET General Purpose Power

PDF下载

中文翻译

PCB计价

SI7981DP-T1-E3 概述

TRANSISTOR 7 A, 20 V, 0.02 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPACK, SOP-8, FET General Purpose Power 功率场效应晶体管

SI7981DP-T1-E3 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOT
包装说明：SMALL OUTLINE, R-XDSO-C6针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84外壳连接：DRAIN
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：7 A最大漏极电流 (ID)：7 A
最大漏源导通电阻：0.02 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XDSO-C6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：3.5 W最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SI7981DP-T1-E3 数据手册

通过下载SI7981DP-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Si7981DP  
Vishay Siliconix  
New Product  
Dual P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKr Package  
with Low 1.07-mm Profile  
0.020 @ V = -4.5 V  
-10.9  
-10.0  
-3.0  
GS  
APPLICATIONS  
-20  
0.024 @ V = -2.5  
V
V
GS  
D Load Switch  
0.033 @ V = -1.8  
GS  
PowerPAK SO-8  
S
1
S
2
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
G
G
2
1
3
G2  
4
D1  
8
D1  
7
D2  
6
D
1
D
2
D2  
Ordering Information: Si7981DP-T1  
5
P-Channel MOSFET  
P-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
-20  
DS  
V
"8  
GS  
T
= 25_C  
= 70_C  
-7.0  
-5.6  
-10.9  
-8.7  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
-30  
DM  
a
continuous Source Current (Diode Conduction)  
I
-2.9  
3.5  
-1.2  
1.4  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
2.2  
0.9  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
28  
60  
3
35  
85  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
3.7  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72354  
S-31611—Rev. A, 11-Aug-03  
www.vishay.com  
1
Si7981DP  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = -450 mA  
-0.40  
-1  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "8 V  
"100  
nA  
GSS  
DS  
GS  
V
= -20 V, V = 0 V  
-1  
-5  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= -20 V, V = 0 V, T = 55_C  
GS  
J
a
On-State Drain Current  
I
V
DS  
v -5 V, V = -4.5 V  
-30  
A
D(on)  
GS  
V
= -4.5 V, I = -10.9 A  
D
0.016  
0.019  
0.026  
0.020  
0.024  
0.033  
GS  
a
V
= -2.5 V, I = -10 A  
Drain-Source On-State Resistance  
r
W
GS  
D
DS(on)  
V
= -1.8 V, I = -3.0 A  
D
GS  
a
Forward Transconductance  
g
34  
S
V
V
= -15 V, I = -10.9 A  
D
fs  
DS  
a
Diode Forward Voltage  
V
SD  
I
S
= -2.9 A, V = 0 V  
-0.7  
-1.2  
55  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
36  
5.9  
9.1  
9.6  
30  
g
Q
Q
V
DS  
= -10 V, V = -4.5 V, I = -10.9 A  
nC  
gs  
gd  
GS  
D
R
W
g
t
45  
85  
d(on)  
t
55  
r
V
= -10 V, R = 10 W  
L
DD  
I
D
^ -1 A, V  
= -4.5 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
310  
150  
82  
465  
225  
125  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = -2.9 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
30  
30  
24  
18  
12  
6
V
GS  
= 5 thru 2 V  
24  
18  
12  
6
1.5 V  
T
= 125_C  
C
25_C  
-55_C  
1 V  
0
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 72354  
S-31611—Rev. A, 11-Aug-03  
www.vishay.com  
2
Si7981DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
5000  
4000  
3000  
2000  
1000  
0
0.08  
0.07  
0.06  
0.05  
0.04  
C
iss  
V
GS  
= 1.8 V  
0.03  
0.02  
0.01  
0.00  
V
V
= 2.5 V  
GS  
C
oss  
= 4.5 V  
24  
GS  
C
rss  
0
6
12  
18  
30  
0
4
8
12  
16  
20  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10 V  
= 10.9 A  
V
= 4.5 V  
DS  
GS  
I
D
I = 10.9 A  
D
0
5
10  
Q
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100 125 150  
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
30  
10  
T
= 150_C  
J
I
D
= 3 A  
I
D
= 10.9 A  
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 72354  
S-31611—Rev. A, 11-Aug-03  
www.vishay.com  
3
Si7981DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
0.4  
30  
24  
18  
0.3  
I
D
= 450 mA  
0.2  
0.1  
12  
6
0.0  
-0.1  
-0.2  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001 0.01  
0.1  
1
10  
100  
1000  
T
- Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
100  
r
Limited  
I
Limited  
DS(on)  
DM  
10  
1
P(t) = 0.001  
P(t) = 0.01  
P(t) = 0.1  
I
D(on)  
Limited  
P(t) = 1  
P(t) = 10  
dc  
T
A
= 25_C  
0.1  
Single Pulse  
BV  
DSS  
Limited  
0.01  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 60_C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72354  
S-31611—Rev. A, 11-Aug-03  
www.vishay.com  
4
Si7981DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.02  
0.05  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72354  
S-31611—Rev. A, 11-Aug-03  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

SI7981DP-T1-E3 相关器件

型号 制造商 描述 价格 文档
SI7983DP VISHAY Dual P-Channel 20-V (D-S) MOSFET 获取价格
SI7983DP-T1-E3 VISHAY Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, 获取价格
SI7991DP VISHAY Dual P-Channel 30-V (D-S) MOSFET 获取价格
SI7991DP-T1 VISHAY Dual P-Channel 30-V (D-S) MOSFET 获取价格
SI7991DP-T1-E3 VISHAY TRANSISTOR 6.6 A, 30 V, 0.023 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 获取价格
SI7994DP VISHAY Dual N-Channel 30-V (D-S) MOSFET 获取价格
SI7994DP-T1-GE3 VISHAY Dual N-Channel 30-V (D-S) MOSFET 获取价格
SI7997DP VISHAY Dual P-Channel 30 V (D-S) MOSFET 获取价格
SI7997DP-T1-GE3 VISHAY Dual P-Channel 30 V (D-S) MOSFET 获取价格
SI7998DP VISHAY Dual N-Channel 30-V (D-S) MOSFET 获取价格

SI7981DP-T1-E3 相关文章

  • 三星大幅削减3D NAND生产中光刻胶用量，供应商面临挑战
    2024-12-03
    2
  • 英伟达GB200芯片量产时间推迟，微软削减40%订单
    2024-12-03
    6
  • 苹果有望2026年下半年推出折叠iPhone，重振折叠屏手机市场
    2024-12-03
    5
  • 英伟达GB300被曝将于明年登场：全水冷方案引领AI算力新飞跃
    2024-12-03
    7

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
  • 概述
  • 规格参数
  • 数据手册
    • 2024 ICPDF网 联系我们和版权申明:QQ 272164286