
图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
A45L9332AF-6F | ![]() |
DRAM | Synchronous Graphics RAM, 512KX32, 5.5ns, CMOS, PQFP100, QFP-100 | ![]() |
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A45L9332AF-7 | ![]() |
DRAM | 256K X 32 Bit X 2 Banks Synchronous Graphic RAM 256K ×32位×2组同步图形RAM |
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A45L9332AF-8F | ![]() |
DRAM | Synchronous Graphics RAM, 512KX32, 6.5ns, CMOS, PQFP100, QFP-100 | ![]() |
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A48P3616AV-4F | ![]() |
DRAM | DRAM | ![]() |
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A48P3616AV-4UF | ![]() |
DRAM | DRAM | ![]() |
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A48P3616AV-5F | ![]() |
DRAM | DRAM | ![]() |
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A48P3616AV-5UF | ![]() |
DRAM | DRAM | ![]() |
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A48P3616V-5 | ![]() |
DRAM | DRAM | ![]() |
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A48P4616AV-4F | ![]() |
DRAM | DRAM | ![]() |
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A48P4616AV-4UF | ![]() |
DRAM | DRAM | ![]() |
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A48P4616AV-5F | ![]() |
DRAM | DRAM | ![]() |
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A48P4616AV-5UF | ![]() |
DRAM | DRAM | ![]() |
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A64E06161G-70 | ![]() |
DRAM | 1M X 16 Bit Low Voltage Super RAM 1M ×16位低电压超RAM |
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A64E06161G-70I | ![]() |
DRAM | 1M X 16 Bit Low Voltage Super RAM 1M ×16位低电压超RAM |
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A64E16161G-25 | ![]() |
DRAM | DRAM | ![]() |
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A64E16161G-25I | ![]() |
DRAM | DRAM | ![]() |
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A64E16161G-70 | ![]() |
DRAM | DRAM | ![]() |
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A64E16161G-70I | ![]() |
DRAM | DRAM | ![]() |
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A64S0616G-55 | ![]() |
DRAM | DRAM | ![]() |
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A64S0616G-55F | ![]() |
DRAM | DRAM | ![]() |
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A64S0616G-55I | ![]() |
DRAM | DRAM | ![]() |
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A64S0616G-55IF | ![]() |
DRAM | DRAM | ![]() |
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A64S0616G-70 | ![]() |
DRAM | 1M X 16 Bit Low Voltage Super RAM 1M ×16位低电压超RAM |
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A64S0616G-70F | ![]() |
DRAM | DRAM | ![]() |
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A64S0616G-70I | ![]() |
DRAM | 1M X 16 Bit Low Voltage Super RAM 1M ×16位低电压超RAM |
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A64S0616G-85 | ![]() |
DRAM | 1M X 16 Bit Low Voltage Super RAM 1M ×16位低电压超RAM |
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A64S0616G-85F | ![]() |
DRAM | DRAM | ![]() |
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A64S0616G-85I | ![]() |
DRAM | 1M X 16 Bit Low Voltage Super RAM 1M ×16位低电压超RAM |
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A64S9316G-70 | ![]() |
DRAM | 512K X 16 Bit Low Voltage Super RAM 512K ×16位低电压超RAM |
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A64S9316G-70I | ![]() |
DRAM | 512K X 16 Bit Low Voltage Super RAM 512K ×16位低电压超RAM |
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DRAM 热门型号
- HY5DU12422CTP-J
- IS41C44054-50JI-TR
- MB8264A-15-W
- MB8264A-12WTV
- HYS72D64320HU-5-B
- WED3DG6432V7D1MG
- TM248CBJ32U-80L
- MC-4516CB64ES-A10BL
- W3EG72255S335D3MG
- W3EG72256S263JD3SF
- K4E160411D-F
- IS41LV16100B-50KLI-TR
- EDS6432AFBH-6BL-E
- K4E660411D-TC50T
- EBE51UD8ABFA-5C
- H5PS5162FFR-E3C
- IS43R16160B-6TL-TR
- HY57V561620CLT-HI
- W3EG7264S202AD4SG
- TMS4257-10JL
- W3EG6433S202BD4G
- W3EG7232S262BD4MG
- M393T2950BG0-CD5
- KM416S8030T-GL
- M2V56S40ATP-7UL
- HY5DU12422CTP-HI
- HY5DU12822DT-LI
- M378T3354BG0-LCC
- HY5DU56422DLF-J
- M368L1624FTM-LCC
- K4E641612C-TC60TN
- TM248CBK32-70S
- W3EG2128M72AFSR263AD3ISG
- K4H510838D-UCCC
- W3EG72255S335AJD3SG
- H5PS1G83EFR-G7I
- M5M44800CTP-7ST
- W3EG7262S265JD3S
- WED3DG6417V75D1-GG
- WED3DG6435V7JD1-GG
- W3DG72128V7D1I
- W3EG7264S262BD4S
- K4E640411D-TC60T
- K4M56163PG-BF1LT
- HY5DU121622BTP-L
- W3H64M72E-667SBCF
- K4S281632B-TC10T
- HY5DU56422BLT-L
- W3EG6432S263D4F
- K4H280838B-TCB0T
- WED3DG7264V7D1G
- EDE5116ABSE-4C-E
- HY5DU28422T-H
- K4E160811D-B
- HY5DU12422BTP-J
- K4H560438E-NCAA
- HY57V281620ELTP-6I
- HY57V561620FLT-HI
- IS41C16105-60TLI
- TMS4116-15NL
- W3EG72125S262D3S
- K4E641612C-TC50TQ
- WED3DG6435V7D1-MG
- M5M417400CTP-5ST
- W3EG6432S202JD3G
- K4H560438E-NLB0T
- HYMD512G7268M-K
- M368L1713ETM-LCC
- MSM51V1000A-80ZS
- W3DG647V10D1I
- MSM51V1000A-10JS
- HY57V281620ELTP-HI
- W3DG6465V75D2I
- K4E660412E-JI60T
- MB81464-15PSZ
- K4H280838B-TCA2T
- KMM374S403CT-GH
- WED3DG6366V7D2I
- W3DG72256V7D2-M
- TM124BBJ32U-60L
- W3EG6432S263D4C
- W3DG6433V75D1G
- HYMD232646AL8J-J
- HY57V643220CTP-S
- W3DG6418V7AD1I-M
- HY5DU56822CF-J
- M2V56S20AKT-7UL
- M5M44265CJ-6T
- W982516AH-75L
- KM48S8030DT-GL
- K4S643232E-TI70T
- W3EG7264S335JD3C
- W3EG72256S335JD3MF
- EDD2516AKTA-6BTI-E
- IS43DR16160A-37CBI
- EDJ5308AASE-AE-E
- HYS64V32220GDL-8A-X
- HYS64V16220GDL-8-C
- IS45S16160D-7BLA1-TR
- W3DG72128V75D1I
什么是DRAM
- DRAM(动态随机存储器)在日常生活中还有一个亲切称呼叫内存条,利用电容储存电荷多少来存储数据,需要定时刷新电路克服电容漏电问题,读写速 度比SRAM慢,常用于容量大的主存储器,如计算机、智能手机、服务器内存等。