
图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
A42U2604V-60U | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42U2604V-80 | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42U2604V-80U | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A43E06161G-95F | ![]() |
DRAM | DRAM | ![]() |
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A43E06161G-95UF | ![]() |
DRAM | DRAM | ![]() |
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A43E06161V-75 | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43E06161V-75F | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43E06161V-75UF | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43E06161V-95 | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43E06161V-95F | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43E06161V-95U | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43E06161V-95UF | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43E06321G-75F | ![]() |
DRAM | 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM 512K ×32位×2组低功耗同步DRAM |
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A43E06321G-95F | ![]() |
DRAM | 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM 512K ×32位×2组低功耗同步DRAM |
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A43E06321G-95UF | ![]() |
DRAM | 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM 512K ×32位×2组低功耗同步DRAM |
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A43E16161G-75F | ![]() |
DRAM | Synchronous DRAM, 2MX16, 6ns, CMOS, PBGA54 | ![]() |
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A43E16161G-75UF | ![]() |
DRAM | Synchronous DRAM, 2MX16, 6ns, CMOS, PBGA54 | ![]() |
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A43E16161G-95UF | ![]() |
DRAM | Synchronous DRAM, 2MX16, 7ns, CMOS, PBGA54 | ![]() |
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A43E16161V-95F | ![]() |
DRAM | 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM 1M ×16位×2组低功耗同步DRAM |
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A43E16161V-95UF | ![]() |
DRAM | 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM 1M ×16位×2组低功耗同步DRAM |
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A43E16321G-75F | ![]() |
DRAM | Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, CSP-90 | ![]() |
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A43E16321G-75UF | ![]() |
DRAM | Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, CSP-90 | ![]() |
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A43E16321G-95F | ![]() |
DRAM | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, CSP-90 | ![]() |
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A43E16321G-95UF | ![]() |
DRAM | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, CSP-90 | ![]() |
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A43E26161AG-75F | ![]() |
DRAM | DRAM | ![]() |
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A43E26161AG-75UF | ![]() |
DRAM | DRAM | ![]() |
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A43E26161AG-95F | ![]() |
DRAM | DRAM | ![]() |
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A43E26161AG-95UF | ![]() |
DRAM | DRAM | ![]() |
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A43E26161AV-75F | ![]() |
DRAM | DRAM | ![]() |
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A43E26161AV-75UF | ![]() |
DRAM | DRAM | ![]() |
DRAM 热门型号
- K4M28163LH-BN75T
- K4S160822DT-FL
- K4S281632B-TC1HT
- K4M281633H-RF75T
- K4H510838F-LLCCT
- K4S161622E-TC60T
- K4H560838E-ULA2T
- K4H560838E-TLB0T
- K4H560838H-ZLCCT
- K4E170411D-F
- K4E640412E-JP45T
- K4H280838D-TLA2T
- K4E660412E-TP45T
- K4E170811D-B
- K4S280432E-TC75T
- K4E660411D-JC50T
- K4E641612C-TC60RM
- K4S281632M-TC1HT
- K4M51163LC-RF1LT
- K4M28163LH-BN1HT
- K4M513233C-SG75T
- K4H560838E-NLB0T
- K4M51323PC-SG75T
- K4M28163PH-RF1LT
- K4M28163LH-RG75T
- K4E661611D-TC50T
- K4H560838E-NLA2T
- K4H560438E-GCB3T
- K4H280438C-TLA0T
- K4H560838E-ULB3T
- K4H560838E-NCA2T
- K4E160811D-F
- K4S281632F-UC75T
- K4H280438C-TCA0T
- K4S640832E-TC75T
- K4H560438E-ZLB3T
- K4M283233H-FL75T
- K4M283233H-FG60T
- K4H510838B-TCB0T
- K4M28163LH-BG1LT
- K4H281638B-TCB0T
- K4H280838B-TCA0T
- K4E640412E-TI50T
- K4H511638C-UCCCT
- K4H281638B-TLA2T
- K4H280838D-TLA0T
- K4E640412E-TP60T
- K4H560438E-ULB0T
- K4E640411D-JC60T
- K4H560438E-NCB3T
- K4H560438E-GLB3T
- K4D551638D-TC60T
- K4C561638C-TCB
- K4H510438C-ZCB3T
- K4H281638B-TCA0T
- IS45S16800E-6BLA1-TR
- IS45S16100E-7TLA2-TR
- IS43DR16320B-37CBLI-TR
- IS43DR86400B-25DBLI-TR
- IS42S16160D-6BL-TR
- IS42S32400D-7TLI-TR
- IS42S16800B-7T-TR
- IS42S16400J-6BLI-TR
- IS42S16320B-7TLI-TR
- IS42S16160D-75ETLI-TR
- IS41LV44002B-50CTG
- IS41C16256-60TI-TR
- IS45S16400F-7CTNA1-TR
- IS43DR16320B-3DBL-TR
- IS45S32200E-7TLA1-TR
- IS43R16160B-6BI-TR
- IS45S16160D-7CTNA2-TR
- IS43R16160B-5TL-TR
- IS43DR16160A-25EBL-TR
- IS42S32200C1-7TL-TR
- IS43DR16160A-37CBLI-TR
- IS42S32200E-7BLI-TR
- IS41LV44054-50J-TR
- IS42S32160C-6BI-TR
- IS46R83200B-6TLA1-TR
- IS42S32200-7BLI
- IS43DR16640A-3DBLI
- IS42S32200-6TL
- IS42S32160C-6BL-TR
- IS42S16160D-6B-TR
- IS42S16160D-6TL-TR
- IS42S32200-7BL
- IS41C16257-35TLI
- IS42S32200E-7BL-TR
- IS42S16400F-5BL-TR
- IS41C85120-60KI-TR
- IS42S16160D-7TL-TR
- IS41C16105-50KLI
- IS41LV44054-50JI-TR
- IS46DR16160A-37CBLA1-TR
- IS43DR86400B-3DBLI-TR
- IS42S32200-6BI
- IS43DR16160A-3DBLI-TR
- IS42S16400D-6BLI
- IS41LV16400-60K
什么是DRAM
- DRAM(动态随机存储器)在日常生活中还有一个亲切称呼叫内存条,利用电容储存电荷多少来存储数据,需要定时刷新电路克服电容漏电问题,读写速 度比SRAM慢,常用于容量大的主存储器,如计算机、智能手机、服务器内存等。