
图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
A43E26161AV-95F | ![]() |
DRAM | DRAM | ![]() |
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A43E26161AV-95UF | ![]() |
DRAM | DRAM | ![]() |
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A43E26161G-95 | ![]() |
DRAM | 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM 1M ×16位×4银行低功耗同步DRAM |
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A43E26161G-95U | ![]() |
DRAM | 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM 1M ×16位×4银行低功耗同步DRAM |
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A43E26161G-95UF | ![]() |
DRAM | 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM 1M ×16位×4银行低功耗同步DRAM |
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A43E26161V-75F | ![]() |
DRAM | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, TSOP2-54 | ![]() |
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A43E26161V-75IF | ![]() |
DRAM | DRAM | ![]() |
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A43E26161V-95 | ![]() |
DRAM | 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM 1M ×16位×4银行低功耗同步DRAM |
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A43E26161V-95F | ![]() |
DRAM | 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM 1M ×16位×4银行低功耗同步DRAM |
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A43E26161V-95IF | ![]() |
DRAM | DRAM | ![]() |
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A43E26161V-95U | ![]() |
DRAM | 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM 1M ×16位×4银行低功耗同步DRAM |
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A43E26161V-95UF | ![]() |
DRAM | 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM 1M ×16位×4银行低功耗同步DRAM |
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A43L0616AV-6 | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43L0616AV-6F | ![]() |
DRAM | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, TSOP2-50 | ![]() |
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A43L0616AV-7 | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43L0616AV-7U | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43L0616BG-6F | ![]() |
DRAM | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA54, CSP-54 | ![]() |
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A43L0616BG-7F | ![]() |
DRAM | Synchronous DRAM, 1MX16, 6ns, CMOS, PBGA54, CSP-54 | ![]() |
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A43L0616BG-7UF | ![]() |
DRAM | Synchronous DRAM, 1MX16, 6ns, CMOS, PBGA54, CSP-54 | ![]() |
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A43L0616BV-6 | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43L0616BV-6F | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43L0616BV-7 | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43L0616BV-7U | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43L0616BV-7UF | ![]() |
DRAM | 512K X 16 Bit X 2 Banks Synchronous DRAM 512K ×16位×2组同步DRAM |
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A43L0632G-6F | ![]() |
DRAM | 512K X 32 Bit X 2 Banks Synchronous DRAM 512K ×32位×2组同步DRAM |
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A43L0632G-6UF | ![]() |
DRAM | 512K X 32 Bit X 2 Banks Synchronous DRAM 512K ×32位×2组同步DRAM |
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A43L0632G-7F | ![]() |
DRAM | 512K X 32 Bit X 2 Banks Synchronous DRAM 512K ×32位×2组同步DRAM |
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A43L1616G-6F | ![]() |
DRAM | DRAM | ![]() |
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A43L1616G-6UF | ![]() |
DRAM | DRAM | ![]() |
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A43L1616G-7F | ![]() |
DRAM | DRAM | ![]() |
DRAM 热门型号
- IS42S16100E-7T-TR
- IS41C44054-60JI-TR
- IS41C16105-60KL
- IS41C16105-50KL
- IS42S16160D-6BLI-TR
- IS42G32256-8TQ
- IS41LV16256-60TI-TR
- IS41LV16256-35T-TR
- IS41C44052-50J-TR
- IS43DR83200A-3DBLI-TR
- IS43DR16320B-3DBLI-TR
- IS42S16100E-6BL-TR
- IS43DR86400B-37CBLI-TR
- IS42S32400E-6BLTR
- IS41C16257-35KLI
- IS42S32400B-6BLI
- IS42S32200E-7TL-TR
- IS42S16800B-75ETLI
- IS42S16400F-7BLI-TR
- IS42S16400B-7TL-TR
- IS42S16320B-6BLI-TR
- IS42S16160D-6TLI-TR
- IS42S16320B-7BL-TR
- IS42S16100C1-7TLI-TR
- IS41C16105-60TL
- IS42S16100C1-7TI-TR
- IS41C16105-50KLE
- IC41LV4100-35JI
- HYS72V64220GU-7.5-C
- HYS72T128300HP-3-B
- HYS72D64320HU-6-B
- HYS64V64220GU-8-A
- HYMD512G726A4M-H
- HYMD264646BL8J-J
- HYS64V64220GU-7.5-C
- HYS64D128021HBDL-6-C
- HYS64D64020HBDL-6-B
- HYMD512G726A4M-K
- HYMD232G726L8M-M
- HYB39S64160AT-8L
- HYB39S64160AT-10L
- HY5DU56822L-L
- HY5DU56822BT-K
- HYB39S64800AT-10L
- HY5V22LF-5I
- HY5DU561622ETP-HI
- HY5DU561622CT-H
- HY5V26FLFP-HI
- HY5DU561622EFP-JI
- HY5V22LF-7I
- HY5DU561622ALF-H
- HY5DU28422DT-J
- HY5PS1G1631CLFP-S5I
- HY5V22F-6I
- HY5V26DLFP-S
- HY5DU28422DLT-M
- HY5DU56822CLT-M
- HY5PS1G431CFP-S5I
- HY5DU28422DLT-L
- HY57V643220DTP-7I
- HY5DU12422CLTP-L
- HY5DU12822ATP-J
- HY5DU12422BT-K
- HY5DU12422CLTP-KI
- HY5DU121622BFP-J
- HY5DU121622AT-K
- HY57V561620CLT-SI
- HY57V64420HGTP-S
- HY5PS1G1631CLFP-Y5I
- HY57V561620FLT-H
- HY5DU56822DT-K
- HY5DU56422BLT-J
- HY5DU56422ALF-M
- HY5DU28422DT-K
- HY57V28820BT-K
- HY57V283220LT-PI
- HY57V281620HCLTP-P
- HY5DU561622DLF-K
- HY57V281620ELTP-7I
- HY5DU12822DLTP-KI
- HY5DU12822DT-JI
- HY5DU56422DLT-K
- HY5DU56822ALF-M
- HY5DU12422CLTP-JI
- HY5DU12822DTP-LI
- HY5DU561622AF-K
- HY5DU12422BLFP-L
- HY5DU12822AT-J
- HY57V281620HCSTP-S
- HY5DU12422CTP-H
- HY5DU281622DLT-J
- HY5DU121622CTP-J
- HY5DU56422DLT-L
- HY5DU56422CTP-M
- HY5DU56422DLT-M
- HY5DU12822BTP-K
- HY5DU12422ALT-J
- HY5DU121622CLFP-J
- HY5DU12422CLTP-J
- HY5DU281622DLT-H
什么是DRAM
- DRAM(动态随机存储器)在日常生活中还有一个亲切称呼叫内存条,利用电容储存电荷多少来存储数据,需要定时刷新电路克服电容漏电问题,读写速 度比SRAM慢,常用于容量大的主存储器,如计算机、智能手机、服务器内存等。