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AP60T03GH-HF [A-POWER]

TRANSISTOR 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power;
AP60T03GH-HF
型号： AP60T03GH-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

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AP60T03GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
12mΩ  
45A  
▼ Low Gate Charge  
▼ Fast Switching Characteristic  
▼ RoHS Compliant  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G
D
S
TO-252(H)  
TO-251(J)  
The TO-252 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications such  
as DC/DC converters. The through-hole version (AP60T03GJ) are  
available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
45  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
32  
A
120  
A
PD@TC=25℃  
Total Power Dissipation  
44  
W
Linear Derating Factor  
0.3  
W/℃  
W
PD@TA=25℃  
Total Power Dissipation3  
Storage Temperature Range  
Operating Junction Temperature Range  
2.4  
TSTG  
TJ  
-55 to 175  
-55 to 175  
℃
℃
Thermal Data  
Symbol  
Parameter  
Value  
3.4  
Units  
℃/W  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
62.5  
110  
Rthj-a  
Data and specifications subject to change without notice  
1
201112077  
AP60T03GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.03  
-
-
-
V
∆BVDSS/∆Tj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance2 VGS=10V, ID=20A  
-
12  
V
GS=4.5V, ID=15A  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance2  
VDS=VGS, ID=250uA  
VDS=10V, ID=10A  
VDS=30V, VGS=0V  
3
25  
-
-
S
IDSS  
Drain-Source Leakage Current  
uA  
uA  
nA  
nC  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
1
Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V  
-
250  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Output Charge  
VGS= +20V, VDS=0V  
ID=20A  
-
+100  
12  
4
20  
-
Qgs  
Qgd  
Qoss  
td(on)  
tr  
VDS=20V  
VGS=4.5V  
7
-
VDD=15V,VGS=0V  
VDS=15V  
10  
9
16  
-
Turn-on Delay Time2  
Rise Time  
ID=20A  
58  
18  
6
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.75Ω  
VGS=0V  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
1135 1820  
VDS=25V  
200  
135  
1.4  
-
-
f=1.0MHz  
f=1.0MHz  
2.1  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
IS=45A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
ns  
nC  
24  
16  
-
-
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP60T03GH/J  
90  
60  
30  
0
125  
100  
75  
50  
25  
0
T C =175 o C  
T C =25 o C  
10V  
8.0V  
10V  
8.0V  
6.0V  
6.0V  
5.0V  
5.0V  
V G =4.0V  
V G =4.0V  
0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
80  
60  
40  
20  
0
2
I D =15A  
I D =20A  
T
C =25 ℃  
V
G =10V  
1.6  
1.2  
0.8  
0.4  
Ω
2
4
6
8
10  
-50  
25  
100  
175  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.8  
2.3  
1.8  
1.3  
0.8  
0.3  
100  
10  
1
T j =175 o C  
T j =25 o C  
0.1  
-50  
25  
100  
175  
0
0.5  
1
1.5  
V SD , Source-to-Drain Voltage (V)  
T j , Junction Temperature ( o C )  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP60T03GH/J  
f=1.0MHz  
10  
10000  
1000  
100  
I D =20A  
8
V
DS =10V  
DS =15V  
DS =20V  
V
V
6
4
2
0
C iss  
C oss  
C rss  
1
5
9
13  
17  
21  
25  
29  
0
6
12  
18  
24  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
1
Duty factor = 0.5  
100  
10  
1
0.2  
Operation in this  
area limited by  
RDS(ON)  
0.1  
100us  
0.1  
0.05  
PDM  
1ms  
t
0.02  
T
T C =25 o C  
10ms  
100ms  
DC  
0.01  
Duty Factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
t
td(on) tr  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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