AP6679S [A-POWER]
P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
| 型号： | AP6679S |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP6679S/P
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
-30V
9mΩ
-75A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
TO-220(P)
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP6679P) are available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±25
-75
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TA=25℃
ID@TA=100℃
IDM
A
-50
A
300
89
A
PD@TA=25℃
Total Power Dissipation
W
Linear Derating Factor
0.71
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
1.4
62
Rthj-a
Data and specifications subject to change without notice
201231031
AP6679S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-30
-
-0.03
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A
VGS=-4.5V, ID=-24A
-
-
V/℃
mΩ
RDS(ON)
9
-
-1
-
-
15
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-24A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ±25
-
-3
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
34
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-1
j
Drain-Source Leakage Current (T=150oC)
-
-
-25
j
IGSS
Qg
±100
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
-
ID=-16A
-
42
6
67
-
Qgs
Qgd
td(on)
tr
VDS=-24V
-
VGS=-4.5V
-
25
11
35
58
78
-
VDS=-15V
-
-
ID=-16A
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=0.94Ω
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
-
2870 4590
VDS=-25V
-
960
740
-
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=-24A, VGS=0V
IS=-16A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
ns
nC
47
43
-
-
Qrr
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP6679S/P
280
240
200
160
120
80
150
100
50
T C =150 o C
-10V
-8.0V
T C =25 o C
-10V
-8.0V
-6.0V
-4.5V
-6.0V
-4.5V
V
G =-3.0V
V G =-3.0V
40
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.5
1
1.5
2
2.5
3
3.5
4
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
15
13
11
9
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I D = 24A
I D =24A
V G =10V
T
C =25 ℃
Ω
Ω
Ω
Ω
7
-50
0
50
100
150
3
5
7
9
11
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
20
10
0
2.3
2
1.7
1.4
1.1
0.8
0.5
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP6679S/P
f=1.0MHz
7
10000
1000
100
I D = -16A
6
V
DS = -24V
Ciss
5
4
3
2
1
0
Coss
Crss
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
1ms
0.2
0.1
10ms
100ms
1s
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
T
C =25 o C
Single Pulse
DC
Peak Tj = PDM x Rthjc + TC
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
-4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off)tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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