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AP6680AGM [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP6680AGM
型号： AP6680AGM
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
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AP6680AGM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Low On-Resistance  
BVDSS  
RDS(ON)  
ID  
30V  
11mΩ  
12A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
G
D
D
D
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
D
G
S
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
S
S
SO-8  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
12  
A
9.8  
A
60  
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
℃/W  
Data and specifications subject to change without notice  
1
200810084  
AP6680AGM  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.02  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=12A  
VGS=4.5V, ID=8A  
V/℃  
mΩ  
RDS(ON)  
-
11  
-
0.8  
-
-
-
16.5 mΩ  
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=12A  
VDS=30V, VGS=0V  
2.5  
V
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (T=70oC) V =24V, V =0V  
12  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
1
-
-
25  
j
DS  
GS  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+20V  
-
-
+100  
Qg  
ID=12A  
-
17  
2.7  
9.9  
9
27  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=25V  
VGS=4.5V  
VDS=15V  
ID=1A  
-
-
-
-
-
-
6
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=15Ω  
-
29  
8
-
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
-
1000 1600  
VDS=25V  
-
220  
175  
1
-
-
f=1.0MHz  
f=1.0MHz  
-
-
1.5  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=2.1A, VGS=0V  
IS=12A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
26  
20  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP6680AGM  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
T A = 25 o  
C
10V  
7.0 V  
5.0 V  
4.5 V  
T A = 150 o  
C
10V  
7.0 V  
5.0 V  
4.5 V  
V
G = 3.0 V  
V
G = 3.0 V  
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
60  
40  
20  
0
1.6  
1.3  
1.0  
0.7  
I D = 8 A  
I D = 12 A  
T
A =25 ℃  
V
G =10V  
Ω
2
4
6
8
10  
25  
50  
75  
100  
125  
150  
V GS , Gate-to-Source Voltage (V)  
T j , Junction Temperature ( o C)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
20.0  
10.0  
0.0  
10  
T j =150 o C  
T j =25 o C  
8
V
GS =4.5V  
6
Ω
V GS =10V  
4
2
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
10  
20  
30  
40  
I D , Drain Current (A)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. On-Resistance vs.  
Drain Current  
3
AP6680AGM  
f=1.0MHz  
10000  
1000  
100  
16  
I D = 12 A  
V DS =15V  
12  
V
DS =20V  
V
DS = 25 V  
8
C iss  
4
C oss  
C rss  
0
0
10  
20  
30  
40  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
0.2  
10  
100us  
0.1  
0.1  
1ms  
10ms  
100ms  
1s  
0.05  
1
0.02  
PDM  
t
0.01  
T
0.01  
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthja + Ta  
0.1  
Rthja = 135℃/W  
T A =25 o C  
DC  
Single Pulse  
0.001  
0.0001  
0.01  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.01  
0.1  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
50  
40  
30  
20  
10  
0
V DS =5V  
VG  
T j =25 o C T j =150 o C  
QG  
4.5V  
QGS  
QGD  
Charge  
Q
0
2
4
6
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : SO-8  
D
Millimeters  
SYMBOLS  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
5.80  
3.80  
NOM  
MAX  
A
A1  
B
c
1.55  
1.75  
0.25  
0.51  
0.25  
5.00  
6.50  
4.00  
8
7
6
3
5
4
0.18  
0.41  
E
E1  
0.22  
D
E
4.90  
1
6.15  
2
E1  
e
3.90  
1.27 TYP  
0.254 TYP  
－
e
G
L
0.38  
0.00  
0.90  
8.00  
B
α
4.00  
A
A1  
G
1.All Dimension Are In Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
Part Marking Information & Packing : SO-8  
Part Number  
Package Code  
meet Rohs requirement  
6680A
GM  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5

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