AP85T03GH-HF [A-POWER]
TRANSISTOR POWER, FET, FET General Purpose Power;型号: | AP85T03GH-HF |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | TRANSISTOR POWER, FET, FET General Purpose Power 晶体 晶体管 功率场效应晶体管 开关 脉冲 |
文件: | 总6页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP85T03GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
30V
6mΩ
75A
D
S
▼ Simple Drive Requirement
▼ Fast Switching
G
Description
G
D
S
TO-252(H)
TO-251(J)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP85T03GJ) is
available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
75
A
55
A
350
A
PD@TC=25℃
Total Power Dissipation
107
W
Linear Derating Factor
0.7
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Value
1.4
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rthj-a
110
Data & specifications subject to change without notice
1
200810235
AP85T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.02
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=4.5V, ID=30A
V/℃
mΩ
RDS(ON)
-
6
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
3
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=175oC) VDS=24V, VGS=0V
55
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
-
500
+100
52
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Output Charge
VGS=+20V
ID=30A
-
33
8
Qgs
Qgd
Qoss
td(on)
tr
VDS=24V
VGS=4.5V
VDD=15V,VGS=0V
VDS=15V
24
24.5
11
77
35
67
39
-
Turn-on Delay Time2
Rise Time
ID=30A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2700 4200
VDS=25V
550
380
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
V
28
10
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85T03GH/J
300
250
200
150
100
50
150
100
50
T C =25 o C
T C = 175 o
C
10V
7.0V
6.0V
10V
7.0V
6.0V
4.5V
V G =4.0V
4.5V
V G =4.0V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
13
11
9
2.0
1.5
1.0
0.5
I D =30A
T c =25 ℃
I D =45A
V
G =10V
Ω
7
5
3
-50
0
50
100
150
200
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
20
10
0
2.4
2
T j =175 o C
T j =25 o C
1.6
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
25
100
175
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP85T03GH/J
f=1.0MHz
14
10000
1000
100
I
D =30A
12
10
8
V DS =15V
DS =20V
V
C iss
V
DS =24V
6
C oss
C rss
4
2
0
1
6
11
16
21
26
31
0
10
20
30
40
50
60
70
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
DUTY=0.5
0.2
0.1
100us
1ms
0.1
0.05
PDM
t
0.02
T
0.01
10ms
Duty factor = t/T
T c =25 o
Single Pulse
C
100ms
DC
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGD
QGS
10%
VGS
td(off)
tr
td(on)
tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
Millimeters
D
SYMBOLS
MIN
NOM MAX
D1
A2
A3
B1
D
1.80
0.40
0.40
6.00
4.80
3.50
2.20
0.50
5.10
0.50
--
2.30
0.50
0.70
6.50
5.35
4.00
2.63
0.85
5.70
1.10
2.30
0.50
2.80
0.60
1.00
7.00
5.90
4.50
3.05
1.20
6.30
1.80
--
E2
D1
E3
F
E3
E1
F1
E1
E2
e
C
0.35
0.65
B1
F1
F
1.All Dimensions Are in Millimeters.
e
e
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
(0.1mm
C
A3
Part Marking Information & Packing : TO-252
Laser Marking
Part Number
Meet Rohs requirement
for low voltage MOSFET only
85T03GH
Package Code
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
Millimeters
A
SYMBOLS
MIN
NOM
MAX
c1
D1
A
A1
B1
B2
c
2.20
0.90
0.40
0.60
0.40
0.40
6.40
4.80
6.70
5.40
1.30
----
2.30
1.20
0.60
0.85
0.50
0.50
6.60
5.20
7.00
5.60
1.50
2.30
8.30
2.40
1.50
0.80
1.05
0.60
0.60
6.80
5.50
7.30
5.80
1.70
----
E2
E
E1
c1
D
D1
E
A1
B2
B1
E1
E2
e
F
F
7.00
9.60
1.All Dimensions Are in Millimeters.
c
2.Dimension Does Not Include Mold Protrusions.
e
e
Part Marking Information & Packing : TO-251
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
85T03GJ
LOGO
YWWSSS
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW :Week
SSS :Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
6
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