AP95T06GS [A-POWER]

TRANSISTOR 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power;


型号：	AP95T06GS
厂家：	ADVANCED POWER ELECTRONICS CORP.
描述：	TRANSISTOR 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power 开关脉冲晶体管
文件：	总6页 (文件大小：218K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AP95T06GS/P

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

60V

8.5mΩ

75A

▼ Lower On-resistance

▼ Fast Switching Characteristic

Description

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

TO-263(S)

TO-220(P)

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP95T06GP)

are available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V³

±20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

260

138

1.11

450

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy⁴

W/℃

E_AS

I_AR

Avalanche Current

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Parameter

Value

0.9

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

Data and specifications subject to change without notice

200804283

AP95T06GS/P

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

BV_DSS

Parameter

Test Conditions

V_GS=0V, I_D=1mA

Min. Typ. Max. Units

Drain-Source Breakdown Voltage

0.05

ΔBV_DSS/ΔT_j

Breakdown Voltage Temperature Coefficient Reference to 25℃, I_D=1mA

V/℃

mΩ

R_DS(ON)

Static Drain-Source On-Resistance²V_GS=10V, I_D=45A

8.5

_GS=4.5V, I_D=20A

mΩ

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

Drain-Source Leakage Current

Drain-Source Leakage Current (T_j=150^oC)

Gate-Source Leakage

Total Gate Charge²

V_DS=V_GS, I_D=250uA

V_DS=10V, I_D=45A

V_DS=60V, V_GS=0V

V_DS=48V ,V_GS=0V

V_GS= ±20V

I_D=45A

I_DSS

Ω

100

I_GSS

±100

Q_g

109

115

Q_gs

Q_gd

t_d(on)

t_r

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time²

Rise Time

V_DS=48V

V_GS=4.5V

V_DS=30V

I_D=45A

t_d(off)

t_f

Turn-off Delay Time

R_G=3.3Ω,V_GS=10V

R_D=0.67Ω

Fall Time

C_iss

C_oss

C_rss

R_g

Input Capacitance

V_GS=0V

5700 9200

Output Capacitance

V_DS=25V

900

560

1.1

Reverse Transfer Capacitance

Gate Resistance

f=1.0MHz

1.7

Source-Drain Diode

Symbol

Parameter

Forward On Voltage²

Reverse Recovery Time²

Test Conditions

Min. Typ. Max. Units

V_SD

t_rr

I_S=45A, V_GS=0V

I_S=20A, V_GS=0V

dI/dt=100A/µs

1.3

Q_rr

Reverse Recovery Charge

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Package limitation current is 75A .

4.Starting T_j=25^oC , V_DD=30V , L=1mH , R_G=25Ω , I_AS=30A.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP95T06GS/P

250

200

150

100

120

10V

7.0 V

5.0V

4.5V

10V

7.0 V

T _C= 150 ^o

T _C= 25 ^o

5.0V

4.5V

V _G=3.0V

V _DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.6

1.2

0.8

0.4

I _D=45A

I _D=20A

_G=10V

_C=25 ^oC

-50

100

150

T _j, Junction Temperature ( ^oC)

V _GSGate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

2.0

1.5

1.0

0.5

0.0

T _j=150 ^oC

T _j=25 ^oC

-50

100

150

0.2

0.4

0.6

0.8

1.2

1.4

T _j, Junction Temperature ( ^oC)

V _SD, Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

AP95T06GS/P

f=1.0MHz

10000

I _D= 45 A

C _iss

V _DS= 30 V

_DS= 38 V

_DS= 48 V

1000

C _oss

C _rss

100

120

Q _G, Total Gate Charge (nC)

V _DS,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

100

Duty factor=0.5

0.2

0.1

100us

1ms

0.1

0.05

P_DM

0.02

10ms

0.01

Duty factor = t/T

Single Pulse

100ms

T _c=25 ^oC

Peak T_j= P_DMx R_thjc+ T_C

Single Pulse

0.01

0.1

100

1000

0.00001

0.0001

0.001

0.01

0.1

V _DS, Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

130

104

V_G

_DS=5V

T _j=25 ^oC

T _j=150 ^oC

Q_G

4.5V

Q_GD

Q_GS

Charge

V _GS, Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-263

Millimeters

SYMBOLS

MIN

NOM MAX

4.25

0.00

2.20

0.70

1.07

0.30

1.15

8.30

4.75

0.15

2.45

0.90

1.27

0.45

1.30

8.90

5.20

0.30

2.70

1.10

1.47

0.60

1.45

9.40

9.70 10.10 10.50

2.04

-----

4.50

-----

2.54

1.50

4.90

1.50

3.04

-----

5.30

----

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-263

Part Number

Package Code

XXXXXS

95T06GS

meet Rohs requirement

LOGO

YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-220

Millimeters

SYMBOLS

MIN

NOM

4.60

0.88

8.80

0.43

MAX

4.40

0.76

8.60

0.36

4.80

1.00

9.00

0.50

9.80 10.10 10.40

14.70 15.00 15.30

6.20

6.40

5.10 REF.

1.35

6.60

1.25

1.17

1.45

1.47

1.32

13.25 13.75 14.25

2.54 REF.

2.60

3.71

2.75

3.84

2.89

3.96

7.4 REF,

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-220

Part Number

meet Rohs requirement

Package Code

95T06GP

LOGO

YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

AP95T06GS [A-POWER]

相关型号：

AP95T06GS-HF

AP95T06GS-HF_16

AP95T07AGP-HF

AP95T07BGP-HF

AP95T07GP

AP95T07GP-HF

AP95T07GS

AP95T07GS-HF_14

AP95T08GP

AP95T10AGI-HF

AP95T10AGP-HF

AP95T10AGW-HF