AP98T06GI-HF [A-POWER]
Simple Drive Requirement, Low On-resistance, Fast Switching Characteristic; 简单的驱动要求，低导通电阻，高速开关特性
| 型号： | AP98T06GI-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Drive Requirement, Low On-resistance, Fast Switching Characteristic |
| 文件： | 总4页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP98T06GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
60V
5mΩ
67A
▼ Low On-resistance
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
67
A
42
A
260
A
PD@TC=25℃
TSTG
Total Power Dissipation
41.6
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
3
Rthj-a
65
Data and specifications subject to change without notice
1
200910191
AP98T06GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
VGS=0V, ID=250uA
60
-
-
-
-
-
V
mΩ
V
5
4
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=10V, ID=40A
VDS=48V, VGS=0V
VGS= +20V, VDS=0V
ID=40A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
82
-
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
25
-
+100
Qg
88
14
43
17
64
35
18
140
Qgs
Qgd
td(on)
tr
VDS=48V
-
-
-
-
-
-
VGS=10V
VDS=30V
ID=40A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=1Ω,VGS=10V
RD=0.75Ω
VGS=0V
Ciss
Coss
Crss
Rg
Input Capacitance
4165 6660
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
1000
385
1.4
-
-
-
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=40A, VGS=0V
IS=10A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
V
VSD
trr
-
-
-
-
1.3
ns
60
-
-
nC
Qrr
Reverse Recovery Charge
130
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP98T06GI-HF
300
250
200
150
100
50
160
120
80
T C = 150 o
C
T C = 25 o
C
10 V
8.0 V
7.0 V
6.0 V
10 V
8.0 V
7.0 V
6.0 V
V G = 5.0 V
V
G = 5 .0V
40
0
0
0
2
4
6
8
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
8
2.4
2.0
1.6
1.2
0.8
0.4
I D =30A
I D =40A
T
C =25 o
C
V
G =10V
7
6
5
4
3
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
30
20
10
0
1.2
0.8
0.4
0.0
T j =150 o
C
T j =25 o
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP98T06GI-HF
f=1.0MHz
6000
5000
4000
3000
2000
1000
0
12
I D = 40 A
10
V DS =30V
V
DS =36V
DS = 48V
C iss
8
6
4
2
0
V
C oss
C rss
0
20
40
60
80
100
120
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
100
10
1
100us
0.1
1ms
10ms
100ms
1s
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
T c =25 o C
DC
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.1
0.001
0.00001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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