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AP9960GM-HF [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9960GM-HF
型号： AP9960GM-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
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中文：  中文翻译
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AP9960GM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D2  
▼ Low On-Resistance  
BVDSS  
RDS(ON)  
ID  
40V  
20mΩ  
7.8A  
D2  
D1  
▼ Fast Switching Speed  
D1  
▼ Surface Mount Package  
▼ RoHS Compliant & Halogen-Free  
G2  
S2  
G1  
SO-8  
S1  
Description  
D2  
S2  
D1  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G2  
G1  
S1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+ 20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
7.8  
A
6.2  
A
20  
A
PD@TA=25℃  
Total Power Dissipation  
2
W
Linear Derating Factor  
0.016  
-55 to 150  
-55 to 150  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-amb  
Maximum Thermal Resistance, Junction-ambient3  
℃/W  
Data and specifications subject to change without notice  
1
201003122  
AP9960GM-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
40  
-
-
0.032  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=7A  
VGS=4.5V, ID=5A  
V/℃  
mΩ  
RDS(ON)  
-
20  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
32  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=70oC)  
Gate-Source Leakage  
Total Gate Charge2  
VDS=VGS, ID=250uA  
VDS=10V, ID=7A  
VDS=40V, VGS=0V  
VDS=32V ,VGS=0V  
VGS= +20V, VDS=0V  
ID=7A  
3
25  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-
1
-
25  
IGSS  
Qg  
-
+100  
14.7  
7.1  
6.8  
11.5  
6.3  
28.2  
12.6  
1725  
235  
145  
-
-
-
-
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=20V  
VGS=4.5V  
VDS=20V  
ID=1A  
td(off)  
tf  
Turn-off Delay Time  
RG=3.3Ω,VGS=10V  
RD=20Ω  
Fall Time  
Ciss  
Coss  
Crss  
Input Capacitance  
VGS=0V  
Output Capacitance  
VDS=25V  
Reverse Transfer Capacitance  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
VD=VG=0V , VS=1.3V  
Min. Typ. Max. Units  
A
V
IS  
Continuous Source Current ( Body Diode )  
-
-
-
-
1.54  
1.3  
VSD  
Forward On Voltage2  
Tj=25℃, IS=2.3A, VGS=0V  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9960GM-HF  
36  
24  
12  
0
32  
24  
16  
8
10V  
6.0V  
5.0V  
4.5V  
T A =150 o C  
10V  
T A =25 o C  
6.0V  
5.0V  
4.5V  
V
GS =4.0V  
V GS =4.0V  
0
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2
1.4  
0.8  
0.2  
80  
60  
40  
20  
0
I D =7.0A  
I D =7.0A  
T A =25 ℃  
V
GS =10V  
Ω
2
4
6
8
10  
12  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
3
AP9960GM-HF  
10  
2.4  
1.6  
0.8  
0
8
6
4
2
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
T c , Case Temperature ( o C)  
T A , Ambient Temperature ( o C)  
Fig 5. Maximum Drain Current v.s.  
Case Temperature  
Fig 6. Typical Power Dissipation  
1
100  
Duty Factor = 0.5  
0.2  
0.1  
10  
0.1  
1ms  
0.05  
10ms  
1
0.02  
100ms  
1s  
0.01  
PDM  
t
0.01  
T
Single Pulse  
0.1  
Duty Factor = t/T  
10s  
Peak Tj = PDM x Rthja + Ta  
Rthja=135oC/W  
T A =25 o C  
DC  
Single Pulse  
0.001  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
V DS (V)  
t , Pulse Width (s)  
Fig 7. Maximum Safe Operating Area  
Fig 8. Effective Transient Thermal Impedance  
4
AP9960GM-HF  
f=1.0MHz  
12  
10000  
1000  
100  
I D =7.0A  
Ciss  
9
VDS =12V  
VDS =16V  
VDS =20V  
6
Coss  
Crss  
3
0
10  
0
5
10  
15  
20  
25  
1
7
13  
19  
25  
31  
VDS (V)  
Q G , Total Gate Charge (nC)  
Fig 9. Gate Charge Characteristics  
Fig 10. Typical Capacitance Characteristics  
3.5  
100  
3
10  
2.5  
Tj=150 o C  
Tj=25 o C  
2
1
1.5  
0.1  
1
0.01  
0.5  
0
0.4  
0.8  
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C )  
V SD (V)  
Fig 11. Forward Characteristic of  
Reverse Diode  
Fig 12. Gate Threshold Voltage v.s.  
Junction Temperature  
5
AP9960GM-HF  
VDS  
RD  
90%  
VDS  
TO THE  
OSCILLOSCOPE  
D
S
0.5 x RATED VDS  
RG  
G
10%  
VGS  
+
-
10 v  
VGS  
td(off)  
td(on) tr  
tf  
Fig 13. Switching Time Circuit  
Fig 14. Switching Time Waveform  
VG  
VDS  
QG  
TO THE  
OSCILLOSCOPE  
D
S
4.5V  
0.5 x RATED VDS  
QGD  
QGS  
G
VGS  
+
1~ 3 mA  
IG  
-
I
D
Q
Charge  
Fig 15. Gate Charge Circuit  
Fig 16. Gate Charge Waveform  
6

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