AP9977GH-HF_14 [A-POWER]
Single Drive Requirement;
| 型号： | AP9977GH-HF_14 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Single Drive Requirement |
| 文件： | 总4页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9977GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
60V
100mΩ
11A
D
S
▼ Single Drive Requirement
▼ Surface Mount Package
▼ RoHS Compliant
G
Description
G
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9977GJ) are
available for low-profile applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+25
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
11
A
6.8
A
45
A
PD@TC=25℃
Total Power Dissipation
21
W
Linear Derating Factor
0.17
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
6
Rthj-a
62.5
110
Rthj-a
Data and specifications subject to change without notice
1
200901134
AP9977GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
60
-
-
0.04
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=4A
V/℃
mΩ
RDS(ON)
-
100
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
125
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=5A
3
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V
7
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
VDS=60V, VGS=0V
-
10
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+25V, VDS=0V
ID=5A
-
+100
6
10
Qgs
Qgd
td(on)
tr
VDS=48V
2
-
VGS=4.5V
VDS=30V
3
-
6
-
ID=5A
11
14
2
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=6Ω
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
485
55
40
780
VDS=25V
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=5A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
23
28
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9977GH/J-HF
25
20
15
10
5
25
20
15
10
5
10V
7.0V
5.0V
4.5V
T C =25 o C
T C = 150 o
C
10V
7.0V
5.0V
4.5V
V
G =3.0V
V G =3.0V
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
2.0
1.6
1.2
0.8
0.4
I D =5A
I D = 4 A
V
G =10V
T
C =25 o C
95
Ω
85
75
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.1
0.7
0.3
6
5
4
3
2
1
0
T j =150 o C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9977GH/J-HF
f=1.0MHz
C iss
12
1000
100
10
I D = 5 A
10
V DS = 30 V
8
V
DS = 38 V
DS = 48 V
V
6
4
2
0
C oss
C rss
0
4
8
12
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
100us
0.2
0.1
0.1
0.05
1ms
PDM
0.02
t
10ms
0.01
T
100ms
DC
T C =25 o C
Single Pulse
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthjc + TC
0.1
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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