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AP9T18GEH [A-POWER]

G-S Diode embedded, Capable of 2.5V gate drive; 摹-S嵌入式二极管，有能力2.5V栅极驱动
AP9T18GEH
型号： AP9T18GEH
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

G-S Diode embedded, Capable of 2.5V gate drive
摹-S嵌入式二极管，有能力2.5V栅极驱动

晶体 栅极 二极管 晶体管 功率场效应晶体管 开关 脉冲 栅极驱动
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AP9T18GEH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
▼ G-S Diode embedded  
BVDSS  
RDS(ON)  
ID  
20V  
14mΩ  
40A  
G
▼ Capable of 2.5V gate drive  
▼ Surface mount package  
▼ RoHS Compliant  
S
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G
D
S
TO-252(H)  
G
D
TO-251(J)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Rating  
20  
Units  
V
VDS  
VGS  
±12  
V
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
40  
A
25  
A
160  
A
PD@TC=25℃  
Total Power Dissipation  
31  
W
Linear Derating Factor  
0.25  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
4
Rthj-a  
110  
Data and specifications subject to change without notice  
200523061-1/4  
AP9T18GEH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
20  
-
-
0.02  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=4.5V, ID=20A  
GS=2.5V, ID=10A  
-
14  
V
-
0.4  
-
-
-
28  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=5V, ID=20A  
VDS=20V, VGS=0V  
VDS=16V ,VGS=0V  
VGS=±12V  
1.5  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=150oC)  
20  
-
-
S
IDSS  
uA  
uA  
uA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
1
-
-
25  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±30  
Qg  
ID=20A  
-
16  
2
26  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=16V  
-
VGS=4.5V  
-
6
-
VDS=10V  
-
8
-
ID=20A  
-
84  
19  
14  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=1.0Ω,VGS=5V  
RD=0.5Ω  
-
-
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
-
1080 1730  
VDS=20V  
-
205  
145  
3.6  
-
-
f=1.0MHz  
-
f=1.0MHz  
-
5.4  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=20A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
26  
19  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
2/4  
AP9T18GEH/J  
120  
100  
80  
60  
40  
20  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T C = 150 o  
C
5.0V  
4.5V  
3.5V  
T C =25 o  
C
5.0V  
4.5V  
3.5V  
2.5V  
2.5V  
V G =1.5V  
V G =1.5V  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
40  
30  
20  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =20A  
I D = 10 A  
T
C =25 o  
C
V
G =4.5V  
Ω
1
1.5  
2
2.5  
3
3.5  
4
4.5  
25  
50  
75  
100  
125  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
20  
16  
12  
8
40.0  
30.0  
20.0  
10.0  
0.0  
V
GS =2.5V  
T j =150 o  
C
T j =25 o  
C
V GS =4.5V  
4
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
10  
20  
30  
40  
50  
60  
70  
V SD , Source-to-Drain Voltage (V)  
I D , Drain Current (A)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. On-Resistance vs.  
Drain Current  
3/4  
AP9T18GEH/J  
f=1.0MHz  
14  
10000  
1000  
100  
12  
I D =20A  
V DS =10V  
10  
8
V
V
DS =12V  
DS =16V  
C iss  
6
4
2
C oss  
C rss  
0
0
10  
20  
30  
40  
1
5
9
13  
17  
21  
25  
29  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
100us  
0.1  
0.05  
PDM  
0.02  
t
T
1ms  
10ms  
100ms  
1s  
0.01  
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
DC  
0.01  
1
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Pulse Width (s)  
V DS , Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
80  
60  
40  
20  
0
V DS =5V  
T j =25 o  
C
T j =150 o  
C
QG  
4.5V  
QGS  
QGD  
Q
Charge  
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4/4  

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